Light exposure is widely known to enhance the performance of amorphous/crystalline silicon heterojunction (HJT) solar cells and modules. Recently, in an attempt to integrate such effect during cell production, processes involving intense illumination densities were reported. In this work, we develop a fast post-treatment on solar cells from Enel Green Power (EGP), using a LED-based tool specifically designed for HJT cells by Applied Materials and CEA. We investigate key aspects that such post-treatments should fulfil to be a relevant option in industry, including the amplitude of the gain, its stability under extended dark storage, its transferability to the module, and the influence of the post-treatment on the module reliability. Eventually, we also assess other potential side-benefits of the developed post-treatment, such as its influence on the efficiency distribution and on the yield of a fabrication line, as well as its robustness with respect to typical cell evolutions.

Combination of silicon heterojunction cell technology (SHJ) with bifacial module architecture is an appealing solution for manufactures who are focused on PV system performances. In this paper, we will present a study with an industrial perspective, initiated to address specific challenges of producing SHJ cells and modules in Europe. The impact of incoming wafer quality has been studied by analyzing at full ingot scale the efficiency performances of SHJ cells. The impact of long queue time prior to deposition is also reported. Finally, results of full size modules with 72 cells are presented.

Among the transparent conductor, one of the most interesting is the Al doped MgxZn1−xO films for their electrical properties that make it very attracting for solar cell application. In this work, the Mg distribution in Al doped MgxZn1−xO films was investigated in order to find a reliable methods to determine Mg distribution. In particular, X‐ray diffraction, Auger electron spectroscopy and time of flight secondary ion mass spectrometry were used to characterize the film. Time of flight secondary ion mass spectrometry MCs+ results appear to be the most promising analytical technique. Copyright © 2014 John Wiley & Sons, Ltd.

In the modern MOS‐based device the poly‐silicon morphological and electrical properties play a very important role for the final die performance. In particular for flash memory devices, due to the continuous shrinkage, it is very important to control the relationship between process parameters and layer characteristics. In this paper we discuss the influence of deposition pressure on morphological and electrical properties of poly‐silicon deposited by LPCVD. We show that, in spite of amorphous state of as‐deposited layer, after crystallization, poly‐silicon grain size, resistivity and work function strongly depend on deposition pressure. TEM plane view with grain size distribution of the three more interesting cases has been studied. Then these grain sizes have been related with the resistivity. It has been observed that higher pressure tends to decrease grain size and resistivity while lower pressure has the opposite effect. Finally AFM analysis has been performed in order to determine a qualitative grain distribution on the surface. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)