Membranotronic devices are artificial neural membranes mimicing the functionality of biological neural networks. These devices rely on the emergence of negative differential resistance (NDR). A minimalistic physical model for membranotronic devices capable of generating NDR is presented. The model features a deformable membrane with holes that facilitate ion currents. The deformation of the membrane, induced by electrostatic pressure from an applied voltage, modulates these currents. The model comprises a well‐established mechanical framework for describing deformable membranes with holes, alongside a model for ionic current that considers temperature‐dependent ion mobilities. It is demonstrated that the model can faithfully reproduce NDR across a wide and physically realistic range of parameter combinations. Furthermore, the simulations reveal that the temperature of the electrolyte can exceed its boiling point, resulting in bubble formation. To mitigate this issue, materials with high heat transfer coefficients and low conductivity are recommended. In essence, the work bridges the gap between artificial membranotronic devices and biological neural networks by providing a robust physical model capable of emulating NDR, a key feature in the operation of such systems. This advancement in membranotronics holds great promise for the development of bioinspired soft artificial neuromimetic systems that closely mimic their biological counterparts.

We present a multi-scale modeling strategy to investigate and optimize epitaxial growth. As example processes, we study Si and SiGe epitaxial films in various equipments. While reactor-scale and feature-scale simulation approaches are useful on themselves, only the combination of both approaches is capable of fully capturing the physical and chemical processes of epitaxial growth on structured substrates.

We present a wet wafer surface processing chain model that allows process engineers to optimize their technological processes concerning total process time. As an example, we study the water layer thickness on wafers from rinsing to the conditions directly before bonding. As part of this process, we focus on simulations of the wafer temperature change in a bond chamber during evacuation. The gas temperature change is calculated using a literature-known model. With this, the wafer surface temperature and the temperature profile along the symmetry axis of the wafer are calculated using Newton's law of cooling and the heat equation, respectively.

The interaction of thin evaporating fluid films with solids is studied using the example of water on LiTaO3 (LTO). Adsorption energies are computed by ab initio density functional theory (DFT) and used to calculate the Gibbs free energy of adsorption of water on LTO. Integrating the disjoining pressure, consisting of molecular and structural components, with respect to film thickness gives an expression for the Gibbs free energy. In this way, parameters for the disjoining pressure can be calculated by fitting its integral to the Gibbs free energy computed by ab initio DFT. A combination of literature-known models for spin drying and evaporation is utilized to describe the temporal evolution of the water layer. The vapor above the water layer is modeled by diffusion and a mass balance is applied at the water-air interface. For thick initial layers, an analytical approximation is derived which only depends on fluid and ambient conditions but not on the substrate properties.

Purpose The purpose of this paper is to analyze and optimize synthetic jet actuators (SJAs) by means of a literature-known one-dimensional analytical model. Design/methodology/approach The model was fit to a wide range of experimental data from in-house built SJAs with different dimensions. A comprehensive parameter study was performed to identify coupling between parameters of the model and to find optimal dimensions of SJAs. Findings The coupling of two important parameters, the diaphragm resonance frequency and the cavity volume, can be described by a power law. Optimal orifice length and diameter can be calculated from cavity height in good agreement with literature. A transient oscillation correction is required to get correct simulation outcomes. Originality/value Based on these findings, SJA devices can be optimized for maximum jet velocity and, therefore, high performance.