All-inorganic perovskites, such as CsPbI2Br, have emerged as promising compositions due to their enhanced thermal stability. However, they face significant challenges due to their susceptibility to humidity. In this work, CsPbI2Br perovskite is treated with poly(3-hexylthiophen-2,5-diyl) (P3HT) during the crystallization resulting in significant stability improvements against thermal, moisture and steady-state operation stressors. The perovskite solar cell retains similar to 90% of the initial efficiency under relative humidity (RH) at similar to 60% for 30 min, which is among the most stable all-inorganic perovskite devices to date under such harsh conditions. Furthermore, the P3HT treatment ensures high thermal stress tolerance at 250 degrees C for over 5 h. In addition to the stability enhancements, the champion P3HT-treated device shows a higher power conversion efficiency (PCE) of 13.5% compared to 12.7% (reference) with the stabilized power output (SPO) for 300 s. In addition, the P3HT-protected perovskite layer in ambient conditions shows similar to 75% of the initial efficiency compared to the unprotected devices with similar to 28% of their initial efficiency after 7 days of shelf life.

Perovskite solar cells (PSCs) excel in achieving high open-circuit voltages (V (OC)) for narrow bandgaps (similar to 1.6 eV) but face challenges with wide-bandgap perovskites, like methylammonium lead trichloride (MAPbCl(3)) with a 3.03 eV bandgap. These materials are transparent in visible absorbing ultraviolet (UV) light. However, achieving uniform film crystallization remains a hurdle. Here, we enhance MAPbCl(3) crystallization by manipulating annealing atmospheres (nitrogen, air, and MACl vapor). Excess MACl vapor improves surface coverage, which is crucial for film stability. We demonstrate that the microstructure of the perovskite film, including surface morphology, grain boundaries, and interfaces, can affect the photovoltaic properties. The subsequently obtained V (OC) of 1.78 V is the highest recorded for single-junction PSCs to the best of our knowledge. Surprisingly, the conventional hole-transport layer spiro-OMeTAD, optimized for narrow bandgaps, sustains such high voltages. Photoluminescence measurements reveal a trap-assisted recombination peak at 1.65 eV, indicating deep traps as significant to voltage loss in MAPbCl(3).

Interfaces in perovskite solar cells play a crucial role in their overall performance, and therefore, detailed fundamental studies are needed for a better understanding. In the case of the classical n-i-p architecture, TiO2 is one of the most used electron-selective layers and can induce chemical reactions that influence the performance of the overall device stack. The interfacial properties at the TiO2/perovskite interface are often neglected, owing to the difficulty in accessing this interface. Here, we use X-rays of variable energies to study the interface of (compact and mesoporous) TiO2/perovskite in such a n-i-p architecture. The X-ray photoelectron spectroscopy and X-ray absorption spectroscopy methods show that the defect states present in the TiO2 layer are passivated by a chemical interaction of the perovskite precursor solution during the formation of the perovskite layer and form an organic layer at the interface. Such passivation of intrinsic defects in TiO2 removes charge recombination centers and shifts the bands upward. Therefore, interface defect passivation by oxidation of Ti3+ states, the organic cation layer, and an upward band bending at the TiO2/perovskite interface explain the origin of an improved electron extraction and hole-blocking nature of TiO2 in the n-i-p perovskite solar cells.

bottom solar cells featuring an interdigitated back contact (IBC) based on laser processes can be integrated in highly efficient 3-Terminal perovskite/silicon tandem solar cells. While surface texturing of the Si bottom cell on the front side is essential for light trapping and thus enhanced absorption of long-wavelength light, it can hamper the conformal wet-chemical deposition of the perovskite top cell. Modification of our texture-etch allows a reduction of the pyramids size without affecting the light absorption in the Si cell. Our laser-processed double-side textured Si IBC cells reach efficiencies up to 22.6% under 1-sun illumination when using a non-optimized laser doping process. Perovskite layers deposited on these modified bottom cells cover their pyramids, which is necessary for shunt-free tandem devices. Since tandem operation requires a low-resistive electrical connection of the subcells, passivation properties of wet-processed SnO2 and TiO2 layers on Si are evaluated. To achieve higher tandem cell efficiencies, IBC solar cells with suitable passivating front contact layers need to be developed.

Interface engineering is a common strategy for passivating surface defects to attain open circuit voltages (Voc) in perovskite solar cells (PSCs). In this work, we introduce the concept of polishing a perovskite thin-film surface using a nanosecond (ns) pulsed ultraviolet laser to reduce surface defects, such as dangling bonds, undesirable phases, and suboptimal stoichiometry. A careful control of laser energy and scanning speed improves the photophysical properties of the surface without compromising the thickness. Using laser polishing, a Voc of 1.21 V is achieved for planar PSCs with a triple cation composition, showing an improved perovskite/hole transport interface by mitigating surface recombination losses. We measure an efficiency boost from 18.0% to 19.3% with improved stability of up to 1000 h. The results open the door to a new class of surface modification using lasers for interface passivation in well-controllable, automated, scalable, and solvent-free surface treatments.

This dataset is a CSV snapshot of The Perovskite Database available at www.perovskitedatabase.com.

Interfaces between hybrid perovskite absorber and its adjacent charge‐transporting layers are of high importance for solar cells performance. Understanding their chemical and electronic properties is a key step in designing efficient and stable perovskite solar cells. In this work, the tapered cross‐section photoemission spectroscopy (TCS‐PES) method is used to study the methylammonium lead iodide (CH3NH3PbI3) (MAPI)‐based solar cells in two configurations, that is, in an inverted p–i–n and in a classical n–i–p architecture. It is revealed in the results that the MAPI film deposited once on the n‐type TiO2 and once on the p‐type NiOx substrates is neither an intrinsic semiconductor nor adapts to the dopant nature of the substrate underneath, but it is heavily n‐type doped on both substrates. In addition to that, the TCS‐PES results identify that the band bending between the MAPI film and the hole transporting layer (HTL) layer depends on the perovskite solar cells architecture. In particular, a band bending on the HTL side in the n–i–p and at the MAPI in the p–i–n architecture is found. The flat band of NiOx at the NiOx/MAPI interface can be explained by the Fermi level pinning of the NiOx at the interface.

This review explores perovskite crystallization in scalable deposition techniques, including blade, slot-die, spray coating, and inkjet printing.

Large datasets are now ubiquitous as technology enables higher-throughput experiments, but rarely can a research field truly benefit from the research data generated due to inconsistent formatting, undocumented storage or improper dissemination. Here we extract all the meaningful device data from peer-reviewed papers on metal-halide perovskite solar cells published so far and make them available in a database. We collect data from over 42,400 photovoltaic devices with up to 100 parameters per device. We then develop open-source and accessible procedures to analyse the data, providing examples of insights that can be gleaned from the analysis of a large dataset. The database, graphics and analysis tools are made available to the community and will continue to evolve as an open-source initiative. This approach of extensively capturing the progress of an entire field, including sorting, interactive exploration and graphical representation of the data, will be applicable to many fields in materials science, engineering and biosciences.

In this work, the effect of annealing temperature on the conductivity of solution-combustion-synthesized calcium vanadium oxide (CVO) films was studied. Conductivity was tailored by the appearance of the phases like \(\hbox {CaVO}_{3}\), \(\hbox {CaV}_{2}\hbox {O}_{5}\) and \(\hbox {Ca}_{2}\hbox {V}_{2}\hbox {O}_{7}\) as a function of annealing temperature; \(\hbox {CaVO}_{3}\) and \(\hbox {CaV}_{2}\hbox {O}_{5}\) are responsible for high conductivity, whereas \(\hbox {V}^{5+}\) presence in \(\hbox {Ca}_{2}\hbox {V}_{2}\hbox {O}_{7}\) contributes towards dielectric nature. Evolution of phases of CVO was identified through X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. A detailed conductivity measurement as a function of annealing temperature helps us to identify the decreasing trend of conductivity with increasing temperature up to \(400{^{\circ }}\hbox {C}\); beyond this it behaves like an insulator. There was a stable conductivity while aging the films in ambient for a few days. This study revealed safe application temperature domain of CVO, and a clear correlation of electrical conductivity with the in-depth structural–compositional–morphological study.