Si3N4 layers were synthesized by 30 keV 14N2+ ion implantation into silicon at room temperature to a total dose of 1018 ions cm−2. Studies of the dielectric breakdown strength and the current density-voltage and capacitance-voltage characteristics were carried out on unannealed samples and on samples annealed in various ambients. It was observed that the dielectric breakdown strength of ion-beam-synthesized Si3N4 layers decreases after thermal annealing treatments. The currents through these layers were found to be ohmic for low voltages and space charge limited for higher applied voltages. It was found that the electrically dead layer of damaged silicon underlying the ion-beam-synthesized Si3N4 dielectric thin film recovers completely to monocrystalline form after vacuum annealing at 900 °C for 2.5 h.

Silicon oxynitride (SixOyNz) layers were synthesized by implanting single-crystal silicon with 14N2+ and 16O2+ 30 keV ions in different proportions to doses varying from 1 × 1017 to 1 × 1018 ions cm-2. IR transmission techniques were used to investigate the structural dependence on the total ion dose and on the annealing temperature. Electrical properties, namely the dielectric strength and the current-voltage and capacitance-voltage characteristics, of the ion-beam-synthesized SixOyNz layers and changes in them after annealing were measured.

physica status solidi (a)Volume 64, Issue 1 p. K7-K11 Short Note Investigation of the Ec – 0.55 eV level of iron in silicon S. V. Joshi, S. V. Joshi Department of Physics, University of Bombay Search for more papers by this authorM. C. Joshi, M. C. Joshi Department of Physics, University of Bombay Search for more papers by this author S. V. Joshi, S. V. Joshi Department of Physics, University of Bombay Search for more papers by this authorM. C. Joshi, M. C. Joshi Department of Physics, University of Bombay Search for more papers by this author First published: 16 March 1981 https://doi.org/10.1002/pssa.2210640149Citations: 2 Bombay 400 098, India. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 C. B. Collins and R. O. Carlson, Phys. Rev. 108, 1409 (1957). 10.1103/PhysRev.108.1409 CASWeb of Science®Google Scholar 2 N. T. Bendik, V. S. Garnyk, and L. S. Milevskii, Soviet Phys. – Solid State 12, 1340 (1970). Google Scholar 3 A. I. Dyatlov, L. M. Kapitonova, A. A. Lebedev, M. A. Pogarskii, and T. A. Shapoghnikova, Soviet Phys. - Semicond. - 11, 559 (1977). Web of Science®Google Scholar 4 B. I. Boltaks, M. K. Bakhadyrkhanov, and G. S. Kulikov, Soviet Phys. - Solid State 13, 2240 (1971). Web of Science®Google Scholar 5 M. Neuberger, Hdb. Electronic Materials, Vol. 5, IFI/Plenum Press, New York/London 1972 (p. 12). Google Scholar 6 P. S. Kireev, Semiconductor Physics, 1975 (p. 130). Google Scholar 7 A. G. Milnes, Deep Impurities in Semiconductors, Wiley, New York 1973 (p. 12). Google Scholar Citing Literature Volume64, Issue116 March 1981Pages K7-K11 ReferencesRelatedInformation

The effects of compressive stress that accompanies an implanted layer due to lattice damage and inclusion of additional atoms have been observed to be predominant for 30 keV room temperature iron implants in 〈111〉 silicon crystals, as investigated by transmission electron microscopy. A slip pattern has been observed for a dose of 5 × 1014 ions cm−2, which is sufficient to form large damaged regions. This corresponds to maximum stress in the implanted layer. The stress distribution in the implanted layer has been explained by constructing the damage density profile and the iron concentration profile. The latter has been obtained by Auger electron spectroscopy (AES).

Si3N4 layers were synthesized by (14N2)+ ion implantation into silicon at 30 keV energy upto a total dose of 1 × 1018 ions cm−2. XPS depth profile studies were carried out on non-annealed and annealed samples. Vacuum annealing at 900° C for 212h was found to be sufficient to grow silicon nitride layers having uniform depth distribution.

Infrared transmission studies of Si3N4 layers formed by high dose 14N2+ ion implantation into silicon at 30 keV for ion doses ranging from 1 × 1016 to 2 × 1018 ions cm−2 and the spectral changes after annealing are reported. It was found that a stoichiometric Si3N4 layer can be formed at a dose level of about 1 × 1018 ions cm−2. These films, after annealing at 900°C, were found to be comparable in their IR and passivation properties with those formed by other conventional techniques.

The effects of Sb and Al implantation on the conductivity of amorphous Ge and Si film are reported. The room temperature conductivity of the vacuum deposited films is found to increase by a factor of 50 to 100 on implantation. The excess conductivity can be removed by annealing at 300°C for 6 hr. Results on a-Si films deposited in a partial pressure of H2 also indicate that doping effect due to ion implantation is very small. The temperature dependence of conductivity of the films is found to obey a T−14 law before and after implantation. The value of T0 is found to be rather insensitive to both hydrogenation and implantation.

The dielectric strength of SiO2 layers formed by high dose oxygen ion implantation into silicon and its changes upon annealing at different temperatures were measured. The observed effects are explained taking into account various technological factors. The I–V characteristics of these layers are also presented for both negative and positive polarities of the applied voltage and for various annealing temperatures.

The ion dose dependence of the infrared transmission spectra of SiO2 layers formed by high dose ion implantation into silicon was investigated for ion doses ranging from 1016to 2 × 1018 (16O2)+ 30 kV ions cm-2. The annealing temperature dependence of these spectra is also reported.

Electron microscope reflection diffraction studies were carried out for silicon wafers implanted with different doses of oxygen ions. Structural changes were monitored both with increasing ion dose and with annealing temperature. The structural properties of the silicon substrate underlying the SiO2 layers that were formed with the highest implant doses were also investigated and changes caused by annealing are reported. An anneal at 800 °C was found to re-establish good structural properties of the silicon underneath the SiO2. C-V studies of MOS structures based on such SiO2 layers indicated good interface properties for samples annealed at 800 °C.