We report a case of an impacted foreign body in the tonsil presenting as recurrent unilateral tonsillitis. A completely embedded foreign body should be considered in cases of recurrent unilateral tonsillitis.

The effects of Sb and Al implantation on the conductivity of amorphous Ge and Si film are reported. The room temperature conductivity of the vacuum deposited films is found to increase by a factor of 50 to 100 on implantation. The excess conductivity can be removed by annealing at 300°C for 6 hr. Results on a-Si films deposited in a partial pressure of H2 also indicate that doping effect due to ion implantation is very small. The temperature dependence of conductivity of the films is found to obey a T−14 law before and after implantation. The value of T0 is found to be rather insensitive to both hydrogenation and implantation.