Inorganic halide perovskite solar cells have been an enormous breakthrough in the solar energy industry because of their low production costs, high efficiency, and practicality. Structural, electrical, mechanical, and optical traits of Mg3NF3 cubic halide perovskites subjected to strain are investigated in this study using first-principle calculation. As a consequence of strain, the electrical energy band gap widens, forcing more electrons to transition from the valence band (VB) to the conduction band (CB) and the visible to the ultraviolet segments of the spectrum. Based on the electrical band structures, the semiconductor substances Mg3NF3 molecules have a direct bandgap of 2.98 eV at the location of Gamma (gamma). In consideration of the quantum effect of spin-orbital coupling (SOC), the bandgap of the Mg3NF3 perovskite is 3.24 eV, correspondingly. Optical features such as dielectric functions, reflectivity, photon absorptions, and loss functions have all been investigated. Some of the predicted factors include elastic constants, Poisson's ratio, Pugh's ratio, and bulk modulus. Studies of this material's elastic attributes reveal that it is anisotropic, ductile, and mechanically stable. The results reveal that when the compressive strain increases, the dielectric constant maxima of Mg3NF3 move towards higher photon energy levels. In contrast, when tensile, they engage in red shifting, a transition to lower photon energy levels. The combined effect of these features makes Mg3NF3 perovskites a fantastic option for solar power optimization equipment and gadgets that use semiconductors.

Inorganic perovskite-based substances have become a major attraction to solar technology. Inorganic cubic Mg3NI3 perovskites have generated a heap of fascination owing to their distinctive optical, electrical, and structural features. The photovoltaic and optoelectronic industries prioritize lead-free, atomically tailored metal halide perovskites due to the need to address lead (Pb) toxicity and instability. This study assessed the optical, structural, and electrical parameters of Pb-free inorganic halide perovskites Mg3NI3 as a function of biaxial compressive and tensile strain, leveraging first-principles density-functional theory (FP-DFT). Refractive index, absorption coefficient, reflectivity, dielectric function, and tolerance factor are a few additional optical parameters that are computed and processed. The bandgap of the planar Mg3NI3 molecule is 0.412 eV (PBE) when SOC is not applied. The bandgap reduces to 0.363 eV (PBE) at its Gamma (gamma) and R-point when the subjective SOC effect is taken into consideration. This compound's bandgap will narrow under tensile strain and expand under compressive strain, depending on whether the SOC effect is applied or not. Several elastic factors are anticipated, including the bulk modulus, Pugh's ratio, elastic constants, anisotropic factors, and Poisson's ratio. Electronic property calculations using band mechanism and density of states (DOS) suggest that Mg3NI3 have a bandgap that is indirect and semiconductive. The elastic properties of this material were found to be mechanically stable, anisotropic, and ductile. In the photon energy range suitable for solar cells, the spikes in the dielectric constant of Mg3NI3 are seen. Our findings point to the prospect of Mg3NI3 as a non-toxic, high-performance, low-cost material for implementation in solar cells and different semiconductor devices.

AbstractIn scenarios of partial shading, the effectiveness of power transmission within a photovoltaic system experiences a notable decline, potentially leading to hotspots within the photovoltaic array. While incorporating bypass diodes can mitigate this challenge, it may lead to numerous power peaks along the power–voltage (P–V) characteristics, thus complicating the task of maximum power tracking. Addressing this issue, using metaheuristic algorithms for maximum power point tracking (MPPT) offers promising outcomes by circumventing convergence towards local power peaks and easing the computational strain on the microcontroller. This study presents a fresh approach to MPPT technique utilizing the proportional–integral–derivative‐based search algorithm to effectively identify the MPP under varying partial shading conditions. Compared to existing methods, the proposed algorithm demonstrates superior performance in power tracking efficiency, tracking time, stability with fewer fluctuations, and achieving higher maximum power output. Evaluation against state‐of‐the‐art algorithms like particle swarm optimization and JAYA confirms the effectiveness of the proposed MPPT technique. MATLAB/Simulink software‐based analysis and its validation using real‐time analysis from the typhoon based hardware‐in‐the‐loop (HIL‐402) emulator support its efficacy.

Spintronics and optoelectronic equipment benefit from efficient modification of electrical and optical characteristics for Van der Waals heterostructures. Janus MoSSe, in two dimensions, has superior electronic, optical, and phonon properties. Based on these characteristics, we evaluate the effects of biaxial compressive and tensile strain ranges of -6% to +6% on the structural, optical, spin-orbit coupling, and phonon properties of two-dimensional MoSSe employing first-principles-based density functional theory calculations. At K-point, MoSSe possesses a direct band gap of 1.665 eV, making it a semiconductor. Yet, applying tensile strain, we can observe that the bandgap of MoSSe has declined. On the other hand, the bandgap of MoSSe rises due to the compressive strain. From the phonon properties, it is clear that the stability of the monolayer MoSSe is observed in the case of tensile strain. With the increase of compressive strain, it loses its stability. With a photon energy of 2.5 eV, MoSSe exhibits three times greater optical absorption than other photon energy levels. In comparison to two monolayers (MoS2, MoSe2), the MoSSe heterostructure shows an elevated optical absorption coefficient in the visible light band, according to our calculations of its dielectric constant and optical absorptionThe MoSSe dielectric constant's peaks shift to the stronger photon energy as compressive strain is increased; in contrast, if tensile strain is added, the highest points shift to the less powerful photon energy. This suggests that the spin-orbit coupling (SOC) in MoSSe heterostructures can be enhanced under strain, which has implications for spintronics. The effect of strain can be used to tailor the phonon behaviors of MoSSe, which can be useful for controlling the material's mechanical and thermal characteristics. The versatility of the electronic and optical properties of the material under strain can be harnessed to design novel devices such as strain sensors, optoelectronic modulators, and detectors.

The incredible optical, structural, and electronic behaviors of inorganic type perovskite compounds have recently attracted considerable interest in the area of solar innovation. This study thoroughly investigated how it affects both tensile and compressive strain on the physical, optical, as well as electronic behaviors that exist in the cubic inorganic Ca3NI3 perovskite using FP-DFT, or first-principles density functional theory. The planar structure of the unstrained Ca3NI3 molecule at the location revealed a direct bandgap of 1.077 eV/1.61 eV using the PBE/HSE technique. The bandgap of the Ca3NI3 perovskite was reduced to 0.827 eV by taking into account the impact of spin-orbit coupling (SOC). Additionally, the bandgap of the framework showed a tendency to decrease under compressive pressure (0.932 eV in-4% strain) and slightly increase under tensile strain (1.187 eV in +4 % strain). According to an analysis of the band characteristics, visible light can be significantly absorbed by the substance as shown by optical parameters like absorption coefficients, reflectivity, dielectric functions, and electron loss functions. The static dielectric constant, epsilon 1(0) of Ca3NI3 is 6.96, the location of the initial critical point in, epsilon 2(omega) is 1.07 eV, the energy range of the large absorption peak is 7.2-7.6 eV, peak location of loss function is 8.7-9.3 eV and reflectivity at 0 eV is 4.8. The Ca3NI3 dielectric constant spikes shifted to lower photon energy as a result of a redshift brought on by an increase in compressive strain. On the other hand, as tensile strain increased, the material showed a blue shift, resulting in an increase in photon energy. Finally, using the SCAPS-1D simulator, the photovoltaic (PV) performance of novel Ca3NI3 absorber-based cell architectures with SnS2 as the Electron Transport Layer (ETL) was thoroughly examined under varied compressive and tensile strain. The greatest power conversion efficiency (PCE) was found to be 31.35 % with JSC of 39.43 mA/cm2, FF of 85.47 %, VOC of 0.9301 V for maximum 4 % tensile strain. These findings suggest that the Ca3NI3 perovskite may be suitable for solar cell applications including energy production and light management in near future.

Organic-inorganic lead based metal halide perovskites have recently emerged as promising candidates for energy harvesting, solar cells, and wearable electronic because of their superior performance. But due to the toxicity of lead, recently lead-free flexible piezoelectric nanogenerator (PENGs) have drawn much attention. Here, we reported lead free PENG, which is a combination of formamidinium tin (Sn) halide perovskite and polyvinylidene fluoride (PVDF) as soft polymer matrix. However, as the Sn 2+ is easily oxidized to Sn 4+ and leads to self-doping in ambient air which results in poor stability and reproducibility, we improved the air stability by using the most common additive SnF2. The morphology study via X-ray diffraction pattern (XRD) of the FASnBr3@SnF2 doped and without doping clearly demonstrated that the characteristic peaks of SnO 2 at 25.2°, and 51.8° are eliminated due to the doping of SnF2 which indicates the stability improvement of the fabricated film. By using the atomic force microscopy (AFM) in PFM mode, we confirm the piezoelectric properties of the FASnBr3@PVDF NPs. With the outstanding flexibility and homogeneous distribution, the device showed a maximum piezoelectric peak to peak output voltage of 84.5 Vp-p, and able to charge a capacitor of 4.7 μF up to 10 V within 30 seconds with only a force of 4.2 N. This study demonstrates the great potential of chemically engineered stable lead-free materials in next-generation high-performance PENG applications.

The organic-inorganic perovskite materials have garnered significant interest in solar technology because of their impressive structural, electrical, and optical characteristics. This study investigated the effects of hydrostatic strains (tensile and compressive) on the structural, electronic, and optical properties and the influence of spin-orbit coupling (SOC) on the electronic properties of formamidinium lead chloride cubic (FAPbCl(3)) perovskite structures employing first-principles density-functional theory (DFT). FAPbCl(3) without SOC showed a semiconductor perovskite structure with a direct bandgap of 2.767 eV. Compressive strain (-8-0 %) reduced bandgaps, but tensile strain only increased them by +2 %. The SOC significantly reduced the bandgap by similar to 1 eV, shifting it from direct to indirect. The analysis showed that neither of compressive or tensile strains can affect the system's semiconductiveness nature under the studied strain range. The dielectric function, loss spectrum, and absorption coefficient peaks of FAPbCl(3) perovskites display a blueshift under compressive strains and a redshift under tensile strains. This material can be used in solar cells, lasers, and light detectors because of its promising electrical and optical properties.

Lead-free perovskite-based solar cells has acquired rapid and expanding attention due to removing hazardous lead from perovskite materials. The major goal of this work is to supplement the research progress by doing a comparative analysis of lead-free perovskite-based solar cells using DFT and a numerical simulation method with the solar cell capacitance simulator-SCAPS-1D. At first, the bandgap and all optical performance were calculated via DFT then these data were applied SCAPS-1D simulator. Next design and optimized all solar cell performance parameters and compare of lead-free perovskite of RbSnCl3 and traditional perovskite RbPbBr3 solar cell with SnS2 as a high-bandgap chalcogenide electron transport layer (ETL) through SCAPS-1D. The effect of absorber and electron transport layer (ETL) thickness, doping concentration, defect density, interface defect density and temperature impact on solar cell efficiency has been comprehensively explored and compared. The proposed heterostructure of Al/FTO/SnS2/(RbPbBr3 and RbSnCl3)/Au shows that the PCE over 29.75% and 33.61% obtained with VOC of 0.978 and 0.825V, Jsc of 34.58 and 51.44 mAcm-2, and FF of 87.91 and 79.19% for RbPbBr3 and RbSnCl3 absorber, respectively. These detailed findings revealed that high-performance lead-free perovskite solar cells can be achieved in a near future.

There is a significant research focus on the utilization of organic-inorganic hybrid perovskite materials in the field of photovoltaics. The remarkable electronic and optical characteristics of organic-inorganic hybrid perovskites are prevalent in solar applications. In this study, the first-principles density functional theory (DFT) was used to investigate how strains affect the structural, electronic, and optical properties of the formamidinium tin tri-iodide (hereafter FASnI3) perovskite structure. The band structure analysis revealed that FASnI3 possesses semiconductor properties. A direct bandgap of 0.96 eV was found at the R-point for unstrained planar FASnI3 structure. The bandgap was reduced when compressive strains were applied. In contrast, the bandgap attained a higher value due to the increased tensile strains. Moreover, the optical properties, such as absorption coefficient, dielectric function and electron loss function, showed that FASnI3 structures have good photo-absorption ability. The dielectric constant exhibited a redshift in its peaks as the compressive strains were increased. However, the dielectric peaks exhibited a blueshift when subjected to the tensile strains. Additionally, for a deeper understanding of the band structure, the effect of spin-orbit coupling (SOC) was considered. The band gap of the FASnI3 perovskite structure was 0.75 eV when the SOC effect was considered. The strain is a crucial factor to consider for optimizing the performance of FASnI3 perovskite structure for their applications in optoelectronic devices.

Non-toxic halide perovskite compounds possess critical inherent and improved features for use in optoelectronic devices. The present work summarizes the physical properties of cubic halide perovskites XSrBr3 (X = Na, Ga, and Tl) based on first-principles theory. The structural, electrical, optical, mechanical, and thermophysical properties of these compounds are studied to assess their potential utility in optoelectronics field. GGA-PBE and GGA-PBEsol functionals were utilized to determine the lattice properties, cell volumes, and formation energies of the compounds. The negative formation energies support the compounds' structural stability. The compounds' bandgaps were computed using the GGA-PBE and Hybrid-HSE06 functionals. Each of the three compounds has a wide indirect bandgap. Optoelectronic devices such as UV detectors, solar panel antireflection coatings, OLED, QLED, and waveguides benefit from a greater static dielectric constant, broad absorption spectra, and low visible reflectance. The elastic stiffness constants Cij use the necessary conditions to demonstrate that the NaSrBr3, GaSrBr3, and TlSrBr3 perovskite structures are mechanically stable. The elastic modulus and other trustworthy properties imply that perovskites are mechanically ductile and soft. In conclusion, the investigation indicates the potential applications of these perovskite materials in photovoltaic and optoelectronic technologies.

In this report, we used first-principles density functional theory calculations to investigate the effect of compressive and tensile strains ranging from -6% to +6 % on the consideration of structural, optical, and electronic properties of CH3NH3PbI3 (Methylammonium lead triiodide, hereafter MAPbI3) perovskite. At the Rpoint of electronic band structures, the unstrained planar CH3NH3PbI3 molecule exhibited a direct electronic bandgap of 1.6744 eV and 0.5187 eV without and with spin-orbit coupling (SOC) effect, respectively. Due to the SOC effect, the bandgap of CH3NH3PbI3 perovskite increased as the tensile strains rose. On the contrary, the bandgap decreases with increasing compressive strains. The density of states (DOS) and projected density of states (PDOS)/total density of states (TDOS) described that the valence bands and the conduction bands of MAPbI3 perovskite are controlled by I-p orbitals and Pb-p orbitals, respectively. The CH3NH3PbI3 perovskite also has strong absorption capabilities in the photon energy region of 2 eV-2.75 eV, as evidenced by the optical studies. The main peak of the dielectric function shifts toward the lower photon energies with increasing compressive strains (redshift effect). However, the dielectric function peaks were blue-shifted by incorporating the tensile strains. The study exposed that SOC significantly modifies the electronic band structure, leading to modifications in phenomena of the perovskite structure. Furthermore, SOC-induced changes in the dielectric response highlight its role in shaping the material's characteristics. This comprehensive investigation provided fundamental insights into the potential manipulation of MAPbI3 perovskite for enhanced device performance in photovoltaic and optoelectronic applications.

The inorganic Ba3SbI3 perovskite has emerged as a promising, stable absorber material for efficient and cost-effective solar cells, owing to its intriguing compositional, structural, electrical, and optical properties. This study delves into the potential of Iodide-based Ba3SbI3 perovskites, known for their relative stability, as absorbers in conjunction with a ZnS electron transport layer (ETL) to create a high-performance solar cell heterostructure. Using the SCAPS-1D simulator, we first estimate the absorption spectrum and bandgap of the Ba3SbI3 absorber layer through density functional theory (DFT). This obtained spectrum serves as a crucial input for device simulation. We further optimize the work function of the rear electrode to enhance the photovoltaic (PV) performance of the ZnS/Ba3SbI3 heterostructure solar cell. Various parameters including doping density, absorber thickness, and bulk/interface defect density are carefully considered. Additionally, we investigated generation and recombination rates, current density-voltage (J-V) characteristics, and corresponding quantum efficiency (QE). Under optimized conditions, our study achieves a remarkable maximum power conversion efficiency (PCE) of 30.49 %, accompanied by a photocurrent density (JSC) of 54.63 mA/cm2, fill factor (FF) of 83.75 %, and open circuit voltage (VOC) of 0.67 V in the ITO/ZnS/Ba3SbI3/Ni structure. This comprehensive analysis offers valuable insights and methodologies for the experimental design of high-performance and stable photovoltaic devices based on Ba3SbI3 perovskite.

The solar technology industry has lately given inorganic perovskite materials an abundance of thought because of their unique optical, electrical and structural characteristics. Issues pertaining to lead (Pb) toxicity and instability require being referred to promptly, making lead-free atomically designed metal halide perovskites of foremost importance to the photovoltaic and optoelectronic industries. Perovskites, a class of inorganic metal halide semiconductors, have variant similarities with Mg 3 SbX 3 (X = I, Br, Cl and F). According to the space group Pm-3m Mg 3 SbX 3 (X = I, Br, Cl and F) has a cubic perovskite crystal structure. Utilizing first-principles density-functional theory (FPDFT), The intention of this investigation is to analyze how strain and spin-orbit coupling (SOC) impact the structural, electrical, optical and mechanical features of the inorganic cubic perovskite of Mg 3 SbX 3 (X = I, Br, Cl and F). At the point between R and Γ, the Mg 3 SbI 3 , Mg 3 SbBr 3 , Mg 3 SbCl 3 molecule displays an indirect bandgap of 0.105 eV, 0.957 eV, 1.728 eV. At the Γ point, the Mg 3 SbF 3 molecule displays a direct bandgap of 3.184 eV. The bandgaps of the Mg 3 SbI 3 , Mg 3 SbBr 3 , Mg 3 SbCl 3 and Mg 3 SbF 3 perovskites are 0.198 eV, 1.203 eV, 1.901 eV and 3.723 eV respectively, when considering the spin-orbital coupling (SOC) quantum influence. A wider bandgap is investigated for increasing compressive strain while a smaller bandgap is observed for increasing tensile strain. Apart from the elastic constants and anisotropic factors, other factors that are anticipated include Pugh's ratio, Poisson's ratio, bulk modulus and others. Isotropic, ductile and mechanically stable are the words that best describe these materials, according to the elastic property evaluations. In the photon energy range that is appropriate for solar cells, the dielectric constant spikes of Mg 3 SbX 3 are found to be visible. Therefore, Mg 3 SbX 3 (X = I, Br, Cl and F) perovskite is a good material to use in solar cells for managing light and producing electricity.

The exploration of the hydrostatic pressure effect on the characteristics of materials is essential for various applications. Our study uses Density Functional Theory (DFT) to investigate the pressure-induced influence on the structural, electronic, optical, and mechanical properties of BaCeO3. According to formation enthalpy and Born stability criteria, BaCeO3 is mechanically and thermodynamically stable from 0 GPa to 80 GPa. The tunable band gap of BaCeO3 within the visible spectrum under applied pressure makes it a potential candidate for absorber layer fabrication of solar cells. The electronic state, mainly attributed to O-2p in the valence band (VB) and Ce-4f in the conduction band (CB), is observed through Partial Density of States (PDOS), although its intensity varies with pressure. The refractive index shows that pressurized BaCeO3 is appropriate for photonics. Its significant absorption at high energy under pressure makes it an excellent candidate for Ultraviolet (UV) detectors, and it also has low light reflection, with static values routinely less than 0.2. Additionally, as pressure increases, elastic constants, elastic moduli, ductility, machinability index, and anisotropy all increase, except for hardness, which decreases. BaCeO3 is approaching to minimal bond stretching with pressure according to Kleinman parameter. These pressure-induced changes in mechanical properties have potential applications in flexible electronics, structural uses, and more.

Inorganic halide perovskite-based compounds of A(3)BX(3) have been gaining huge attention during the development of high-efficiency solar cells (SC) in recent years. This paper, investigating the physical and chemical properties could unveil its further potential to be used as absorber materials in advanced multijunction photovoltaics. The structural, optical, and electronic characterization of different compositional compounds of A(3)BX(3) (A=Ca/Sr, BP/As, X=I/Br) perovskites are examined thoroughly to be used as absorber in high performance photovoltaics. The DFT study reveals direct bandgaps of 1.93 (2.60) eV, 1.58 (2.14) eV, 1.96 (2.63) eV, 1.58 (2.16) eV, 1.52 (2.30) eV, 1.26 (1.94) eV, 1.53 (2.32) eV, and 1.26 (1.96) eV at Gamma for the Ca3AsBr3, Ca3AsI3, Ca3PBr3, Ca3PI3, Sr3AsBr3, Sr3AsI3, Sr3PBr3, and Sr3PI3 perovskites using PBE (HSE) methods with optical absorption of (2-5)x10(4) (a. u.) in the optical region (< 3.2 eV). Subsequently, the potential of the A(3)BX(3) absorber has been investigated and analyzed at varying layer thickness, defect densities, and doping concentrations with SnS2 electron transport layer (ETL) layer using FTO/SnS2/A(3)BX(3)/Ni heterostructure with current density-voltage (J-V) characteristics and corresponding quantum efficiency (QE) observation. The power conversion efficiency (PCE) of 13.52, 20.88, 13.66, 22.47, 20.83, 28.16, 20.77, and 27.32% were achieved in Ca3AsBr3, Ca3AsI3, Ca3PBr3, Ca3PI3, Sr3AsBr3, Sr3AsI3, Sr3PBr3, and Sr3PI3 absorber-based heterojunction SC. Notably, the highest PV performance revealed a PCE over 28% with a V-OC of 0.913 V, J(SC) of 35.75 mA/cm(-3,) and FF of 86.26% obtained in the Sr3AsI3 absorber SCs. Thus, these detailed studies on the physical and optoelectronic properties of eight (8) different possible absorber-based configurations including their PV applications unveil the huge potential of A(3)BX(3) (i.e., Sr3AsI3) and provide resources for the practical cell development of inorganic perovskites-based high efficiency SC over 28%.

In the pursuit of commercializing electronic and optoelectronic devices, researchers have turned their attention to non-toxic inorganic cubic metal halide perovskites. This study focuses on novel lead-free compounds-specifically AlGeX3 (where X = F, Cl, and Br) and examines their structural, electronic, optical, and mechanical properties under the application of hydrostatic pressure through density functional theory (DFT). The mechanical stability of all compounds is rigorously assessed using Born stability criteria and formation energy. The elastic investigations reveal that the materials have anisotropy, ductility, and good Machinenabilty index depending on the halide type and applied pressure. The pressure-dependent electronic band structures are calculated by GGA-PBE functional to demonstrate the intriguing behavior of the compounds. Band structures are also calculated by HSE06 functional without pressure. Further, the substitution of the halide F with Cl/Br leads to an indirect to direct band gap transformation. Additionally, increasing positive hydrostatic pressure results in a tunable band gap with decreasing trends for all the compounds leading them to transit from semiconductor to metallic state. This phenomenon is explained by the partial and total density of states (PDOS and TDOS). The improvement of pressure-dependent optical properties in both visible and UV regions makes them valuable contenders in the quest for efficient solar cells and other electronic and optoelectronic devices.

In this study, we have calculated the structural, mechanical, elastic anisotropy, electronic, optical, and thermal properties of Ba 3 SbI 3 perovskite using first-principles-based DFT calculations. We have computed the crystal structure and lattice parameters ( a = 7.05 Å ) which consisted with previous theoretical and experimental results. The Ba 3 SbI 3 is stable as checked by the standards of mechanical stability criteria, ductile in nature, and elastically anisotropic. Semiconductor feature of Ba 3 SbI 3 is ensured from the band structure, total density of states (TDOS) and partial density of states (PDOS) calculations as the difference of conduction band (CB) and valence band (VB) in the Fermi level. From the electron charge density mapping, it exhibits ionic bond nature. Furthermore, optical properties have investigated in details. The Debye temperature (123.776 K), thermal conductivity (0.247 Wm −1 K −1 ), and melting temperature (123.776 K) of the Ba 3 SbI 3 compound were calculated and analyzed, which is potential candidates of thermal barrier coating (TBC) material.

Abstract This research study investigates the influence of various nanoparticles on the dielectric breakdown voltage, oil dissipation factor, viscosity, and thermal conductivity of nanofluids. Nanofluids were prepared using synthetic ester oil as the base fluid, and three nanoparticles, silicon carbide (SiC), boron nitride (BN), and zirconium dioxide (ZrO2), were added at different concentrations (0.125 wt%, 0.250 wt%, and 0.375 wt%), which are basically the nano‐sized powder that can be blended in the oil. The dielectric breakdown voltage testing was conducted to evaluate the electrical performance of the nanofluids. Additionally, rheological measurements were performed to study the kinematic viscosity, while thermal conductivity was determined using appropriate techniques. The enhancements in each property were evaluated and compared for the different nanoparticle concentrations and types. Previous studies focused only on the investigation of the electrical properties of nanofluids. However, in the present study, the electrical as well as thermo‐physical characterisation of nanofluids is performed and analysed as they directly affect the cooling performance of transformers. The results provide dielectric and thermo‐physical characterisation that exhibit excellent insulation and cooling functionalities and valuable insights into the potential applications of nanofluids as dielectrics in various high‐voltage electrical equipment. ZrO2 and SiC nanoparticles exhibited a reduction in the oil dissipation factor. SiC consistently improved breakdown voltage (Bdv), while ZrO2 nanoparticles showed concentration‐dependent effects, enhancing Bdv at low concentrations but degrading it at higher ones. Unexpectedly, nanoparticle dispersion and lubrication effects can lead to viscosity reductions, countering conventional expectations. Surprisingly, at the highest concentration, the thermal conductivity decreases compared to the lower nano‐concentrations in synthetic ester oil.

Inorganic metal halide solar cells made from perovskite stand out for having outstanding efficiency, cheap cost, and simple production processes and recently have generated attention as a potential rival in photovoltaic technology. Particularly, lead-free Ca3AsBr3 inorganic materials have a lot of potential in the renewable industry due to their excellent qualities, including thermal, electric, optoelectronic, and elastic features. In this work, we thoroughly analyzed the stress-driven structural, mechanical, electrical, and optical properties of Ca3AsBr3 utilizing first-principles theory. The unstressed planar Ca3AsBr3 compound's bandgap results in 1.63 eV, confirming a direct bandgap. The bandgap within this compound could have changed by applying hydrostatic stress; consequently, a semiconductor-to-metallic transition transpired at 50 GPa. Simulated X-ray diffraction further demonstrated that it maintained its initial cubic form, even after external disruption. Additionally, it has been shown that an increase in compressive stress causes a change of the absorption spectra and the dielectric function with a red shift of photon energy at the lower energy region. Because of the material's mechanical durability and increased degree of ductility, demonstrated by its stress-triggered mechanical characteristics, the Ca3AsBr3 material may be suitable for solar energy applications. The mechanical and optoelectronic properties of Ca3AsBr3, which are pressure sensitive, could potentially be advantageous for future applications in optical devices and photovoltaic cell architecture.

In recent times, ABX3 halide perovskite materials have emerged as revolutionary components in photovoltaic solar cells, functioning as photoabsorbers. Recently, there has been significant research attention directed towards lead halide perovskites. Nevertheless, there is ongoing research to identify lead-free alternatives due to the toxicity of lead. Therefore, the present study utilizes density functional theory to investigate the physical characteristics of the lead-free halide perovskites GaXCl3 (where X represents Ca, Sr, and Ba). The study aims to assess the feasibility of GaXCl3 (X = Ca, Sr, and Ba) for use in optoelectronic applications through an analysis of its structural, electrical, optical, and mechanical properties. The band gaps of GaCaCl3, GaSrCl3, and GaBaCl3 compounds have been found to be 3.45 eV, 3.22 eV, and 2.92 eV, respectively, which correspond to higher indirect band gaps. Additionally, elastic constants were computed in order to gain insight into the mechanical characteristics of the substance. The results reveal that all three compounds exhibit positive elastic constant Cij values, demonstrating their mechanical stability. However, their phonon dispersion curves show some negative parts which indicate their dynamic instability with temperature. Considerable performance in optoelectronic technology can be deduced from the absorption and optical conductivity of ultraviolet and visible light.