Single-layer molybdenum ditelluride (MoTe2) has attracted attention due to the smaller energy difference between the semiconducting (1H) and semimetallic (1T') phases with respect to other two-dimensional transition metal dichalcogenides (TMDs). Understanding the phenomenon of polymorphism between these structural phases is of great fundamental and practical importance. In this paper, we report a 1H to 1T' phase transition occurring during the chemical vapor deposition (CVD) synthesis of single-layer MoTe2 at 730 °C. The transformation originates at the heterocontact between monoclinic and hexagonal crystals and progresses to either yield a partial or complete 1H to 1T' phase transition. Microscopic and spectroscopic analyses of the MoTe2 crystals reveal the presence of Te vacancies and mirror twin boundaries (MTB) domains in the hexagonal phase. The experimental observations and theoretical simulations indicate that the combination of heterocontact formation and Te vacancies are relevant triggering mechanisms in the observed transformation. By advancing in the understanding and controlling of the direct synthesis of lateral 1T'/1H heterostructures, this work contributes to the development of MoTe2-based electronic and optoelectronic devices with low contact resistance.

For electronic and optical applications of two-dimensional (2D) materials and their vertical heterostructures, it is important to know the positions, densities, and atomic structures of crystallographic defects. Thus, to understand the role of these well-defined defects on the properties of 2D heterostructure devices, it is desirable to combine device measurements with atomically resolved transmission electron microscopy (TEM) experiments. Here, the electron beam is used not only to image atomic defects but also to create and manipulate them. However, TEM poses special requirements to sample preparation because it needs freestanding samples. Our presented generic sample platform enables TEM imaging of freestanding 2D materials, followed by experiments on the same sample area placed on an arbitrary substrate or embedded into a heterostructure device. A sacrificial copper layer and a hydrophobic polystyrene film enable the transfer of a strongly adhered 2D material flake from a TEM grid to the substrate. Proof-of-principle experiments show that signatures of electron-beam-induced defects can be measured in electric tunneling measurements and photoluminescence. Our transfer procedure works reliably for monolayer and few-layer transition-metal dichalcogenides such as MoS2, MoSe2, WSe2, MoTe2, hBN, and graphene. It can also be suitable for the assembly of defect-based sensors and photon sources.

In mono- and few-layer 2D materials, the exact number of layers is a critical parameter, determining the materials’ properties and thus their performance in future nano-devices. Here, we evaluate in a systematic manner the signature of exfoliated free-standing mono- and few-layer MoS2 and MoTe2 in TEM experiments such as high-resolution transmission electron microscopy, electron energy-loss spectroscopy, and 3D electron diffraction. A reference for the number of layers has been determined by optical contrast and AFM measurements on a substrate. Comparing the results, we discuss strengths and limitations, benchmarking the three TEM methods with respect to their ability to identify the exact number of layers.

The realization of chromatic aberration correction enables energy-filtered transmission electron microscopy (EFTEM) at atomic resolution even for large energy windows. Previous works have demonstrated lattice contrast from ionization-edge signals such as the L2,3 edges of silicon or titanium. However, the direct interpretation as chemical information was found to be hampered by contributions from elastic contrast with dynamic scattering, especially for thick samples. Here we demonstrate that even for thin samples with light atoms, the interpretation of the ionization-edge signal is complicated by inversions from bright-atom to dark-atom contrast. Our EFTEM experiments for graphene show lattice contrast in the carbon K-edge signal, and we find bright-atom and dark-atom contrast for different defoci.

Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries, and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here, we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ∼1000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of eight-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to that of the six-atom rings of graphene and a relatively low barrier of ∼0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.

We present a method for a bottom-up synthesis of atomically thin graphene sheets with tunable crystallinity and porosity using aromatic self-assembled monolayers (SAMs) as molecular precursors. To this end, we employ SAMs with pyridine and pyrrole constituents on polycrystalline copper foils and convert them initially into molecular nanosheets-carbon nanomembranes (CNMs)- via low-energy electron irradiation induced cross-linking and then into graphene monolayers via pyrolysis. As the nitrogen atoms are leaving the nanosheets during pyrolysis, nanopores are generated in the formed single-layer graphene. We elucidate the structural changes upon the cross-linking and pyrolysis down to the atomic scale by complementary spectroscopy and microscopy techniques including X-ray photoelectron and Raman spectroscopy, low energy electron diffraction, atomic force, helium ion, and high-resolution transmission electron microscopy, and electrical transport measurements. We demonstrate that the crystallinity and porosity of the formed graphene can be adjusted via the choice of molecular precursors and pyrolysis temperature, and we present a kinetic growth model quantitatively describing the conversion of molecular CNMs into graphene. The synthesized nanoporous graphene monolayers resemble a percolated network of graphene nanoribbons with a high charge carrier mobility (∼600 cm2/(V s)), making them attractive for implementations in electronic field-effect devices.

Two-dimensional (2D) membranes featuring arrays of sub-nanometer pores have applications in purification, solvent separation and water desalination. Compared to channels in bulk membranes, 2D nanopores have lower resistance to transmembrane transport, leading to faster passage of ions. However, the formation of nanopores in 2D membranes requires expensive post-treatment using plasma or ion bombardment. Here, we study bottom-up synthesized porous carbon nanomembranes (CNMs) of biphenyl thiol (BPT) precursors. Sub-nanometer pores arise intrinsically during the BPT-CNM synthesis with a density of 2 ± 1 pore per 100 nm2. We employ BPT-CNM based pore arrays as efficient ion sieving channels, and demonstrate selectivity of the membrane towards ion transport when exposed to a range of concentration gradients of KCl, CsCl and MgCl2. The selectivity of the membrane towards K+ over Cl- ions is found be 16.6 mV at a 10 : 1 concentration ratio, which amounts to ∼30% efficiency relative to the Nernst potential for complete ion rejection. The pore arrays in the BPT-CNM show similar transport and selectivity properties to graphene and carbon nanotubes, whilst the fabrication method via self-assembly offers a facile means to control the chemical and physical properties of the membrane, such as surface charge, chemical nature and pore density. CNMs synthesized from self-assembled monolayers open the way towards the rational design of 2D membranes for selective ion sieving.

We present a novel methodology to synthesize two-dimensional (2D) lateral heterostructures of graphene and MoS2 sheets with molecular carbon nanomembranes (CNMs), which is based on electron beam induced stitching. Monolayers of graphene and MoS2 were grown by chemical vapor deposition (CVD) on copper and SiO2 substrates, respectively, transferred onto gold/mica substrates and patterned by electron beam lithography or photolithography. Self-assembled monolayers (SAMs) of aromatic thiols were grown on the gold film in the areas where the 2D materials were not present. An irradiation with a low energy electron beam was employed to convert the SAMs into CNMs and simultaneously stitching the CNM edges to the edges of graphene and MoS2, therewith forming a heterogeneous but continuous film composed of two different materials. The formed lateral heterostructures possess a high mechanical stability, enabling their transfer from the gold substrate onto target substrates and even the preparation as freestanding sheets. We characterized the individual steps of this synthesis and the structure of the final heterostructures by complementary analytical techniques including optical microscopy, Raman spectroscopy, atomic force microscopy (AFM), helium ion microscopy (HIM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) and find that they possess nearly atomically sharp boundaries.

High-energy electronic excitations of graphene and MoS2 hetero structures are investigated by momentum-resolved electron energy-loss spectroscopy in the range of 1 to 35 eV. The interplay of excitations on different sheets is understood in terms of long-range Coulomb interactions and is simulated using a combination of ab initio and dielectric model calculations. In particular, the layered electron-gas model is extended to thick layers by including the spatial dependence of the dielectric response in the direction perpendicular to the sheets. We apply this model to the case of graphene/MoS2/graphene heterostructures and discuss the possibility of extracting the dielectric properties of an encapsulated monolayer from measurements of the entire stack.

Collective electronic excitations (plasmons) in single‐layer and few‐layer graphene have been studied extensively in the past few years. In particular, the dispersion and nature of the π plasmon peak in free‐standing single‐layer graphene was investigated by means of momentum‐resolved electron energy‐loss spectroscopy (MREELS) [1‐3]. Besides, it was also studied how the transition from mono‐ to multilayer graphene changes the shape of EEL spectra. Within a layered electron‐gas (LEG) model, this transition can be modeled very precisely [4,5]. For other 2D materials such as transition metal dichalcogenides (TMDs), however, this approach may be highly inaccurate. We therefore evaluate more precise model calculations for multilayer systems. Our calculations are based on time‐dependent DFT calculations for the individual monolayers. The plane‐wave pseudopotential DFT code abinit [6] is used to simulate the ground state within local density approximation (LDA). The linear response is then calculated within random‐phase approximation (RPA) using the dp‐code [7]. Compared to the LEG model where the monolayers are assumed to be perfectly 2‐dimensional and homogeneous, we preserve the layers' microscopic structure in our calculations. We demonstrate that only by taking the finite thickness of the constituent monolayers into account, the spectra of multilayer MoS 2 can be modeled correctly (see the figure). Our calculations can be also applied to arbitrary van‐der‐Waals heterostructures. Our results are directly compared to MREEL spectra recorded with a Zeiss Libra 200 based TEM prototype (“SALVE I”, [8,2]) equipped with a monochromator and an Ω type in‐column energy filter. This allows for the verification of our calculations over a large range of energy losses (0‐40 eV) and different momentum transfers within the Brillouin zone. [9]

We study the atomic scale microstructure of non-stoichiometric two-dimensional(2D) transition metal dichalcogenide MoSe2-x, by employing aberration-corrected high-resolution transmission electron microscopy. We show that a Se-deficit in single layers of MoSe2 grown by molecular beam epitaxy gives rise to a dense network of mirror-twin-boundaries (MTBs) decorating the 2D-grains. With the use of density functional theory calculations, we further demonstrate that MTBs are thermodynamically stable structures in Se-deficient sheets. These line defects host spatially localized states with energies close to the valence band minimum, thus giving rise to enhanced conductance along straight MTBs. However, electronic transport calculations show that-the transmission of hole charge carriers across MTBs is strongly suppressed due to band bending effects. We further observe formation of MTBs during in situ removal of Se atoms by the electron beam of the microscope, thus confirming that MTBs appear due-to Se-deficit, and not coalescence of individual grains during growth. At a very high local Se-deficit, the 2D sheet becomes unstable and transforms to a nanowire. Our results on Se-deficient MoSe2 suggest routes toward engineering the properties of 2D transition Metal dichalcogenides by deviations from the stoichiometric composition.