Thermal cycling accelerated life testing is an established technique for thermo-mechanical evaluation and qualification of electronic packages. Finite element life predictions for thermal cycling configurations are challenging due to several reasons including the complicated temperature/time dependent constitutive relations and failure criteria needed for solders, encapsulants and their interfaces; aging/evolving material behavior for the packaging materials (e.g. solders); difficulties in modeling plating finishes; the complicated geometries of typical electronic assemblies; etc. In addition, in-situ measurements of stresses and strains in assemblies subjected to temperature cycling are difficult because of the extreme environmental conditions and the fact that the primary materials/interfaces of interest (e.g. solder joints, die device surface, wire bonds, etc.) are embedded within the assembly (not at the surface). For these reasons, little is known about the evolution of the stresses, strains, and deformations occurring within sophisticated electronic packaging geometries during thermal cycling. In this work, we have used test chips containing piezoresistive stress sensors to characterize the in-situ die surface stress during long-term thermal cycling of electronic packaging assemblies. Using (111) silicon test chips, the complete three-dimensional stress state (all 6 stress components) was measured at each rosette site by monitoring the resistance changes occurring in the sensors. The packaging configuration studied in this work was flip chip on laminate where 5 times 5 mm perimeter bumped die were assembled on FR-406 substrates. Three different thermal cycling temperature profiles were considered. In each case, the die stresses were initially measured at room temperature after packaging. The packaged assemblies were then subjected to thermal cycling and measurements were made either incrementally or continuously during the environmental exposures. In the incremental measurements, the packages were removed from the chamber after various durations of thermal cycling (e.g. 250, 500, 750, 1000 cycles, etc.), and the sensor resistances were measured at room temperature. In the continuous measurements, the sensor resistances at critical locations on the die device surface (e.g. die center and die corners) were recorded continuously during the thermal cycling exposure. From the resistance data, the stresses at each site were calculated and plotted versus time. The experimental observations show cycle-to-cycle evolution in the stress magnitudes due to material aging effects, stress relaxation and creep phenomena, and development of interfacial damage.

Underfill encapsulation is used with flip chip die assembled to laminate substrates to distribute and minimize the solder joint strains, thus improving thermal cycling fatigue life. Any delaminations that occur at the underfill/die interface will propagate to the neighboring solder bumps and lead to solder joint fatigue and failure. The onset and propagation of delaminations in flip chip assemblies exposed to thermal cycling are governed by the cyclic stresses and damage occurring at the underfill to die interface. For this reason, underfills are optimized by increasing their adhesion strength, interfacial fracture toughness, and resistance to thermal aging. In this work, we have sought to develop a fundamental understanding of delamination initiation and growth in flip chip assemblies through simultaneous characterization of the stress and delamination states at the die to underfill interface. Mechanical stresses on the device side of the flip chip die have been measured using special (111) silicon stress test chips containing piezoresistive sensor rosettes that are capable of measuring the complete 3D silicon surface stress state in the silicon (including the interfacial shear and normal stresses at the die to underfill interface). By continuous monitoring of the sensor resistances, the die surface stresses were measured during post-assembly thermal cycling environmental testing from -40 to 125 C. With this approach, the stress distributions across the chip, and the stress variations at particular locations at the die to underfill interface have been interrogated for the entire life of the flip chip assembly. In order to correlate the stress changes at the sensor sites with delamination onset and propagation, CSAM evaluation of the test assemblies was performed after every 125 thermal cycles. A total of 75 flip chip assemblies with 3 different underfills have been evaluated. For each assembly, the complete histories of 3D die surface stresses and delamination propagation have been recorded versus the number of thermal cycles. With this approach, we have been able to identify the stress histories that lead to delamination initiation for each underfill encapsulant, and the variation of the stresses that occur before and during delamination propagation. The pr- ogressions of stress and delamination have been mapped across the entire surface of the die, and a series of stress/delamination videos have been produced. One of the most important discoveries is that the shear stresses occurring at the corners of flip chip die have been demonstrated to be a suitable proxy for prognostic determination of future delamination initiations and growth.

In this work, we report on our efforts to develop ultra-high reliability flip chip on laminate assemblies for deployment in harsh thermal cycling environments characteristic of ground and aerospace vehicles (e.g. -55 to 150 degC). Reliability enhancement has been achieved through the use of a novel low expansion, high stiffness, and relatively low cost laminate substrate material that virtually eliminates CTE mismatches between the silicon die and top layer PCB interconnect. The utilized laminate features a sandwich construction that contains standard FR-406 outer layers surrounding a low expansion high thermal conductivity carbon fiber-reinforced composite core (STABLCOR). Through both experimental testing and modeling, we have demonstrated that robust flip chip assemblies can be produced that illustrate ultra-high solder joint reliability during thermal cycling and extremely low die stresses. Liquid to liquid thermal shock testing has been performed on test assemblies incorporating daisy chain test die, and piezoresistive test chips have been used to characterize temperature dependent die stresses. In both sets of experiments, results obtained using the hybrid PCB laminate with FR-406 outer layers and carbon fiber core have been compared to those obtained with more traditional glass-epoxy laminate substrates including FR-406 and NELCO 4000-13. Nonlinear finite element modeling results for the low expansion flip chip on laminate assemblies have been correlated with the experimental data. Unconstrained thermal expansion measurements have also been performed on the hybrid laminate materials using strain gages to demonstrate their low CTE characteristics. Other experimental testing has demonstrated that the new laminate successfully passes toxicity, flammability, and vacuum stability testing as required for pressurized and unpressurized space applications

Minimizing device side die stresses is especially important when multiple copper/low-k interconnect redistribution layers are present. Mechanical stress distributions in packaged silicon die resulting during assembly or environmental testing can be accurately characterized using test chips incorporating integral piezoresistive sensors. In this paper, measurements of thermally induced stresses in flip chip on laminate assemblies are presented. Transient die stress measurements have been made during underfill cure, and the room temperature die stresses in final cured assemblies have been compared for several different underfill encapsulants. In addition, stress variations have been monitored in the assembled flip chip die as the test boards were subjected to slow temperature changes from -40 to +150 degrees C. Using these measurements and ongoing numerical simulations, valuable insight has been gained on the effects of assembly variables and underfill material properties on the reliability of flip chip packages.

Mechanical stress distributions in packaged silicon die that have resulted during assembly or environmental testing can he accurately characterized using test chips incorporating integral piezoresistive sensors. In this paper, an overview of recent measurements made in flip chip on laminate assemblies with (I 11) silicon test chips is presented. Transient die stress measurements have been made during underfill cure, and the room temperature die stresses in final cured assemblies have been compared for several different underfill encapsnlants. The experimental stress measurements in the flip chip samples were then correlated with finite element predictions for the tested confgurations. In addition, stress variations have been monitored in the assembled flip chip die as the test hoards were subjected to slow temperature changes from -40 to +I50 "C. Finally the stress variations occurring during thermal cycling from -40 to +I25 'C have been characterized. These measurements have been correlated with the delaminations occurring at the die passivation to underfill interface measured using C-mode Scanning Acoustic Microscopy (C-SAM). Using the measurements and numerical simulations, valuable insight has been gained on the effects of assembly variables and underfill material properties on the reliability of flip chip packages.

Mechanical stress distributions in packaged silicon die that have resulted during assembly or environmental testing can be accurately characterized using test chips incorporating integral piezoresistive sensors. In this paper, an overview of recent measurements made in flip chip on laminate assemblies with (111) silicon test chips is presented. Transient die stress measurements have been made during underfill cure, and the room temperature die stresses in final cured assemblies have been compared for several different underfill encapsulants. The experimental stress measurements in the flip chip samples were then correlated with finite element predictions for the tested configurations. In addition, stress variations have been monitored in the assembled flip chip die as the test boards were subjected to slow temperature changes from −40 to +150°C. Finally the stress variations occurring during thermal cycling from −40 to +125°C have been characterized. These measurements have been correlated with the delaminations occurring at the die passivation to underfill interface measured using C-mode Scanning Acoustic Microscopy (C-SAM). Using the measurements and numerical simulations, valuable insight has been gained on the effects of assembly variables and underfill material properties on the reliability of flip chip packages.

Die cracking is a major failure mode observed during flip chip on laminate assembly or during subsequent package thermal cycling reliability tests. At low temperatures, tensile stresses are produced on the backside of the silicon die due to the nature of the underfill process and the mismatch in coefficients of expansion of the silicon die and laminate substrate. In this work, stress sensing test chips have been used to measure the mechanical stresses on the backside of die in flip chip on laminate assemblies. Special piezoresistive test die were fabricated with the sensing resistors on the face of the die opposite to the solder bumps. This is contrary to other studies that have used stress sensors to measure stresses on the device surface of the die (solder bump side). The backside die stresses have been measured after solder reflow, during underfill cure, and as a function of temperature after cure. The experimental stress measurements were then correlated with finite element predictions for the flip chip configurations. Using the measurements and numerical simulations, valuable insight has been gained on die cracking phenomena during flip chip on laminate assembly.

Die cracking is a major failure mode observed during flip chip on laminate assembly or during subsequent package thermal cycling reliability rests. At low temperatures, tensile stresses are produced on the backside of the silicon die due to the nature of the underfill process and the mismatch in coefficients of expansion of the silicon die and laminate substrate. In this work stress sensing test chips have been used to measure the mechanical stresses on the backside of die in flip chip on laminate assemblies. Special piezoresistive test die were fabricated with the sensing resistors on the face of the die opposite to the solder bumps. This is contrary to other studies that have used stress sensors to measure stresses on the typical device surface of the die (solder bump side). The backside die stresses have been measured after solder reflow during underfill cure, and as a function of temperature after cure. The experimental stress measurements were then correlated with finite element predictions for the flip chip configurations. Using the measurements and numerical simulations, valuable insight has been gained on die cracking phenomena during flip chip an laminate assembly.