InAs QD lasers emitting in the 1.3-μm-region have suitable device properties important for integrated applications and growth on silicon. Sensing applications have encouraged further development of these wavelengths for high-volume-manufacturing. Assessment of epitaxial wafers is demonstrated here by fabrication of oxide isolated broad-area edge-emitting-lasers and on-wafer characterization of 150-mm p-doped InAs QD wafers grown via MBE. We report on spatial variations through Power-Current-Voltage-Wavelength measurements with Jth of EELs calculated using current spreading structures. A 9 nm decrease in center-to-edge emission wavelengths is observed for 2mm devices, with a threshold current density variation of approximately 0.63 kA/cm2 for a particular epitaxial design.

We report the first electrically pumped InAs quantum-dot lasers grown on Si within narrow oxide pockets for monolithic on-chip light sources. High performance devices are achieved at 300 mm wafer scale with high yields.

We report the first electrically pumped InAs quantum dot lasers grown in narrow oxide pockets patterned on 300 mm Si wafer for monolithic on-chip light source. This architecture should enable the next generation of photonics integrated circuit platforms.

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III–V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here, we demonstrate the first electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned (001) Si wafer with a butt-coupled configuration. Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall-plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.

Molecular beam epitaxy is used for growth of structures with ScAlN for radio frequency filter applications. The nitride layers are grown directly on Si substrates for surface acoustic wave resonators, Lamb acoustic wave resonators, and on an epitaxial Mo on Er2O3 buffer layer on Si for film bulk acoustic resonators (FBARs). The crystal structure of the ScAlN layer is defined by Sc concentration. It can vary from wurtzite to hexagonal. Good crystal quality of the Mo layer results in low sheet resistance which is very close to that of the bulk material. Enhanced electroacoustic performance is achieved in fabricated acoustic devices. A Lamb acoustic wave resonator with ScAlN grown directly on Si demonstrates a high coupling factor (4.8%) and figure of merit (Q × kt2) (9.1) at a resonance frequency of 9.02 GHz. A fundamental resonance frequency 4.32 GHz is achieved for an FBAR device fabricated using the structure with the nitride layer on an epitaxial metal electrode. At the 4.32 GHz resonance frequency, the extracted figure of merit of the resonator is 10.6.

In this talk the authors will highlight a filter with all epitaxially grown layers which include epitaxial metal and ScAlN. Results for the epitaxial metal will show films of molybdenum with resistivities comparable to that of bulk metal in films with thicknesses down to 50nm. Initial test show resonance frequencies of 4.3GHz with 3dBbandwidth quality factor (Q3-db) over 1000