The impact of cycling conditions on data retention is evaluated using state-of-the-art 3D charge trap QLC NAND flash. We characterize the raw bit error rate and optimal read voltage offsets for different cycling parameters, such as program/erase cycle count, dwell time, and cycling temperature. The presented results can provide useful insights into the reliability of modern charge-trap NAND flash and guide the design of flash management algorithms in the NAND controller.
This paper presents a tensor-based algorithm that leverages a hardware accelerator for inferencing decision-tree-based machine learning models. The algorithm has been integrated in a public software library and is demonstrated on an IBM z16 server, using the Telum processor with the Integrated Accelerator for AI. We describe the architecture and implementation of the algorithm and present experimental results that demonstrate its superior runtime performance compared with popular CPU-based machine learning inference implementations.
In this study, we focused on a member of the Ole e 1 domain-containing family, AtSAH7, in Arabidopsis thaliana. Our lab reports for the first time on this protein, AtSAH7, that was found to interact with Selenium-binding protein 1 (AtSBP1). We studied by GUS assisted promoter deletion analysis the expression pattern of AtSAH7 and determined that the sequence 1420 bp upstream of the transcription start can act as a minimal promoter inducing expression in vasculature tissues. Moreover, mRNA levels of AtSAH7 were acutely increased under selenite treatment in response to oxidative stress. We confirmed the aforementioned interaction in vivo, in silico and in planta. Following a bimolecular fluorescent complementation approach, we determined that the subcellular localization of the AtSAH7 and the AtSAH7/AtSBP1 interaction occur in the ER. Our results indicate the participation of AtSAH7 in a biochemical network regulated by selenite, possibly associated with responses to ROS production.
IBM Telum is the next generation processor chip for IBM Z and LinuxONE systems. The Telum design is focused on enterprise class workloads and it achieves over 40% per socket performance growth compared to IBM z15. The IBM Telum is the first server-class chip with a dedicated on-chip AI accelerator that enables clients to gain real time insights from their data as it is getting processed. Seamlessly infusing AI in all enterprise workloads is highly desirable to get real business insight on every transaction as well as to improve IT operation, security, and data privacy. While it would undeniably provide significant additional value, its application in practice is often accompanied by hurdles from low throughput if run on-platform to security concerns and inconsistent latency if run off-platform. The IBM Telum chip introduces an on-chip AI accelerator that provides consistent low latency and high throughput (over 200 TFLOPS in 32 chip system) inference capacity usable by all threads. The accelerator is memory coherent and directly connected to the fabric like any other general-purpose core to support low latency inference while meeting the system's transaction rate. A scalable architecture providing transparent access to AI accelerator functions via a non-privileged general-purpose core instruction further reduces software orchestration and library complexity as well as provides extensibility to the AI functions. On a global bank customer credit card fraud detection model, the AI accelerator achieves 22× speed up in latency compared to a general purpose core utilizing vector execution units. For the same model, the AI accelerator achieves 116k inferences every second with a latency of only 1.1 msec. As the system is scaled up from one chip to 32 chips, it performs more than 3.5 Million inferences/sec and the latency still stays very low at only 1.2 msec. This paper briefly introduces the IBM Telum chip and later describes the integrated AI accelerator. IBM Telum's AI accelerator architecture, microarchitecture, integration into the system stack, performance, and power are covered in detail.
Phase Change Memory (PCM) is a new nonvolatile memory technology that promises to disrupt current big data applications and even create entirely new ones. This is because it can serve as both fast storage and large memory, which is out of reach for incumbent memory technologies. This tutorial focuses on recent technological developments and system-level concepts for the realization of PCM-based systems. We also discuss new circuits and architectures that enable novel applications of PCM in big data analytics and hardware for artificial intelligence.
New coding schemes based on generalized concatenated codes are proposed for emerging nonvolative memory technologies. Key requirements are high code rate, low latency, high throughput and the ability to correct chipkill failures while sustaining high data reliability despite raw bit error rates up to 10 -3 . New concatenated codes based on Reed-Solomon codes have been designed for payload sizes of 512B, 1kB, and 2kB; they have high rates above 0.8 and a high data reliability with a decoder target BER of 10 -15 . An FPGA-based implementation of the decoder validates the low latency and high throughput: for an operating clock frequency of 250MHz, the decoding latency is 236ns and a 9.3GB/s throughput is achieved.
Modern gradient boosting software frameworks, such as XGBoost and LightGBM, implement Newton descent in a functional space. At each boosting iteration, their goal is to find the base hypothesis, selected from some base hypothesis class, that is closest to the Newton descent direction in a Euclidean sense. Typically, the base hypothesis class is fixed to be all binary decision trees up to a given depth. In this work, we study a Heterogeneous Newton Boosting Machine (HNBM) in which the base hypothesis class may vary across boosting iterations. Specifically, at each boosting iteration, the base hypothesis class is chosen, from a fixed set of subclasses, by sampling from a probability distribution. We derive a global linear convergence rate for the HNBM under certain assumptions, and show that it agrees with existing rates for Newton's method when the Newton direction can be perfectly fitted by the base hypothesis at each boosting iteration. We then describe a particular realization of a HNBM, SnapBoost, that, at each boosting iteration, randomly selects between either a decision tree of variable depth or a linear regressor with random Fourier features. We describe how SnapBoost is implemented, with a focus on the training complexity. Finally, we present experimental results, using OpenML and Kaggle datasets, that show that SnapBoost is able to achieve better generalization loss than competing boosting frameworks, without taking significantly longer to tune.
The continuous growth in 3D-NAND flash storage density has primarily been enabled by 3D stacking and by increasing the number of bits stored per memory cell. Unfortunately, these desirable flash device design choices are adversely affecting reliability and latency characteristics. In particular, increasing the number of bits stored per cell results in having to apply additional voltage thresholds during each read operation, therefore increasing the read latency characteristics. While most NAND flash challenges can be mitigated through appropriate background processing, the flash read latency characteristics cannot be hidden and remains the biggest challenge, especially for the newest flash generations that store four bits per cell. In this paper, we introduce read heat separation (RHS), a new heat-aware data-placement technique that exploits the skew present in real-world workloads to place frequently read user data on low-latency flash pages. Although conceptually simple, such a technique is difficult to integrate in a flash controller, as it introduces a significant amount of complexity, requires more metadata, and is further constrained by other flash-specific peculiarities. To overcome these challenges, we propose a novel flash controller architecture supporting read heat-aware data placement. We first discuss the trade-offs that such a new design entails and analyze the key aspects that influence the efficiency of RHS. Through both, extensive simulations and an implementation we realized in a commercial enterprise-grade solid-state drive controller, we show that our architecture can indeed significantly reduce the average read latency. For certain workloads, it can reverse the system-level read latency trends when using recent multi-bit flash generations and hence outperform SSDs using previous faster flash generations.
3D QLC NAND has recently entered the SSD market offering capacity increase and cost reduction compared to 3D TLC NAND. However, the endurance of QLC NAND is limited. Moreover, due to reduction of the available margin between the programmed threshold voltage distributions, QLC NAND is more susceptible to bit errors. Read voltage calibration is a key element of modern NAND flash memory controllers to improve the overall bit-error rate and maintain enterprise level reliability. To reduce the calibration overhead associated with the increased number of pages and read voltages in QLC NAND, page grouping is an effective approach. This paper presents open block characterization and read voltage calibration results of state-of-the-art 3D QLC NAND. We present experimental measurements of the bit-error characteristics and threshold voltage distributions based on closed and open block test patterns. We discuss the reliability issues with open blocks in preserving uniform characteristics within a page group at the boundary programmed layer and analyze the performance of different calibration algorithms.
This paper discusses the reliability challenges of 3D NAND flash memory and their impact on flash management for enterprise storage applications. Emphasis is given to the read voltage calibration and its critical role in achieving low errorrates and low latency read performance, as well as in enabling accurate block health estimation. We present experimental results that demonstrate the improvements in endurance, retention and read-disturb from different read voltage calibration schemes, and we address their requirements from a system perspective, i.e., the accuracy vs. complexity trade-off. We discuss the above aspects for state-of-the-art 3D TLC and QLC NAND flash memory.
Phospholipase PLA1-Iγ2 or otherwise DAD1-LIKE LIPASE 3 (DALL3) is a member of class I phospholipases and has a role in JA biosynthesis. AtDALL3 was previously identified in a yeast two-hybrid screening as an interacting protein of the Arabidopsis Selenium Binding Protein 1 (SBP1). In this work, we have studied AtDALL3 as an interacting partner of the Arabidopsis Selenium Binding Protein 1 (SBP1). Phylogenetic analysis showed that DALL3 appears in the PLA1-Igamma1, 2 group, paired with PLA1-Igammma1. The highest level of expression of AtDALL3 was observed in 10-day-old roots and in flowers, while constitutive levels were maintained in seedlings, cotyledons, shoots and leaves. In response to abiotic stress, DALL3 was shown to participate in the network of genes regulated by cadmium, selenite and selenate compounds. DALL3 promoter driven GUS assays revealed that the expression patterns defined were overlapping with the patterns reported for AtSBP1 gene, indicating that DALL3 and SBP1 transcripts co-localize. Furthermore, quantitative GUS assays showed that these compounds elicited changes in activity in specific cells files, indicating the differential response of DALL3 promoter. GFP::DALL3 studies by confocal microscopy demonstrated the localization of DALL3 in the plastids of the root apex, the plastids of the central root and the apex of emerging lateral root primordia. Additionally, we confirmed by yeast two hybrid assays the physical interaction of DALL3 with SBP1 and defined a minimal SBP1 fragment that DALL3 binds to. Finally, by employing bimolecular fluorescent complementation we demonstrated the in planta interaction of the two proteins.
Stain normalization is an important processing task for computer-aided diagnosis (CAD) systems in modern digital pathology. This task reduces the color and intensity variations present in stained images from different laboratories. Consequently, stain normalization typically increases the prediction accuracy of CAD systems. However, there are computational challenges that this normalization step must overcome, especially for real-time applications: the memory and run-time bottlenecks associated with the processing of images in high resolution, e.g., 40X. Moreover, stain normalization can be sensitive to the quality of the input images, e.g., when they contain stain spots or dirt. In this case, the algorithm may fail to accurately estimate the stain vectors. We present a high-performance system for stain normalization using a state-of-the-art unsupervised method based on stain-vector estimation. Using a highly-optimized normalization engine, our architecture enables high-speed and large-scale processing of high-resolution whole-slide images. This optimized engine integrates an automated thresholding technique to determine the useful pixels and uses a novel pixel-sampling method that significantly reduces the processing time of the normalization algorithm. We demonstrate the performance of our architecture using measurements from images of different sizes and scanner formats that belong to four different datasets. The results show that our optimizations achieve up to 58x speedup compared to a baseline implementation. We also prove the scalability of our system by showing that the processing time scales almost linearly with the amount of tissue pixels present in the image. Furthermore, we show that the output of the normalization algorithm can be adversely affected when the input images include artifacts. To address this issue, we enhance the stain normalization pipeline by introducing a parameter cross-checking technique that automatically detects the distortion of the algorithm's critical parameters. To assess the robustness of the proposed method we employ a machine learning (ML) pipeline that classifies images for detection of prostate cancer. The results show that the enhanced normalization algorithm increases the classification accuracy of the ML pipeline in the presence of poor-quality input images. For an exemplary ML pipeline, our new method increases the accuracy on an unseen dataset from 0.79 to 0.87.
3D NAND flash memory has entered dynamically into the space of enterprise server and storage systems, offering significantly higher capacity and better endurance than the latest 2D technology node. Moreover, the advancements in vertical stacking, cell design and program/read algorithms, have also enabled TLC 3D NAND flash with enterprise-level reliability, thus achieving further increase in capacity and cost-per-bit reduction. This paper presents an in-depth analysis of the bit-error characteristics of state-of-the-art 64-layer 3D TLC NAND flash with a focus on read-voltage calibration. We provide experimental measurements of the RBER and threshold voltage distributions using typical and mixed-mode test patterns of program/erase cycling, retention and read-disturb. Moreover, we quantify the RBER components attributed to threshold voltage level overlapping and on-chip 2-step program errors. Finally, we characterize how the optimal read voltages change under different device stress and we evaluate calibration schemes with different performance and complexity trade-offs.
In this paper we analyze, evaluate, and improve the performance of training Random Forest (RF) models on modern CPU architectures. An exact, state-of-the-art binary decision tree building algorithm is used as the basis of this study. Firstly, we investigate the trade-offs between using different tree building algorithms, namely breadth-first-search (BFS) and depth-search-first (DFS). We design a novel, dynamic, hybrid BFS-DFS algorithm and demonstrate that it performs better than both BFS and DFS, and is more robust in the presence of workloads with different characteristics. Secondly, we identify CPU performance bottlenecks when generating trees using this approach, and propose optimizations to alleviate them. The proposed hybrid tree building algorithm for RF is implemented in the Snap Machine Learning framework, and speeds up the training of RFs by 7.8x on average when compared to state-of-the-art RF solvers (sklearn, H2O, and xgboost) on a range of datasets, RF configurations, and multi-core CPU architectures.
Color normalization is one of the main tasks in the processing pipeline of computer-aided diagnosis (CAD) systems in histopathology. This task reduces the color and intensity variations that are typically present in stained whole-slide images (WSI) due to, e.g., non-standardization of staining protocols. Moreover, it increases the accuracy of machine learning (ML) based CAD systems. Given the vast amount of gigapixel-sized WSI data, and the need to reduce the time-to-insight, there is an increasing demand for efficient ML systems. In this work, we present a high-performance pipeline that enables big data analytics for WSIs in histopathology. As an exemplary ML inference pipeline, we employ a convolutional neural network (CNN), used to detect prostate cancer in WSIs, with stain normalization preprocessing. We introduce a set of optimizations across the whole pipeline: (i) we parallelize and optimize the stain normalization process, (ii) we introduce a multi-threaded I/O framework optimized for fast non-volatile memory (NVM) storage, and (iii) we integrate the stain normalization optimizations and the enhanced I/O framework in the ML pipeline to minimize the data transfer overheads and the overall prediction time. Our combined optimizations accelerate the end-to-end ML pipeline by 7.2× and 21.2× , on average, for low and high resolution levels of WSIs, respectively. Significantly, it allows for a seamless integration of the ML-assisted diagnosis with state-of-the-art whole slide scanners, by reducing the prediction time for high-resolution histopathology images from ∼ 30 min to under 80 s.
Stain normalization is one of the main tasks in the processing pipeline of computer-aided diagnosis systems in modern digital pathology. Some of the challenges in this tasks are memory and runtime bottlenecks associated with large image datasets. In this work, we present a scalable and fast pipeline for stain normalization using a state-of-the-art unsupervised method based on stain-vector estimation. The proposed system supports single-node and distributed implementations. Based on a highly-optimized engine, our architecture enables high-speed and large-scale processing of high-magnification whole-slide images (WSI). We demonstrate the performance of the system using measurements from different datasets. Moreover, by using a novel pixel-sampling optimization we show lower processing time per image than the scanning time of ultrafast WSI scanners with the single-node implementation and additional 3.44 average speed-up with the 4-nodes distributed pipeline.
During abiotic stress the primary symptom of phytotoxicity can be ROS production which is strictly regulated by ROS scavenging pathways involving enzymatic and non-enzymatic antioxidants. Furthermore, ROS are well-described secondary messengers of cellular processes, while during the course of evolution, plants have accomplished high degree of control over ROS and used them as signalling molecules. Glutaredoxins (GRXs) are small and ubiquitous glutathione (GSH) -or thioredoxin reductase (TR)-dependent oxidoreductases belonging to the thioredoxin (TRX) superfamily which are conserved in most eukaryotes and prokaryotes. In Arabidopsis thaliana GRXs are subdivided into four classes playing a central role in oxidative stress responses and physiological functions. In this work, we describe a novel interaction of AtGRXS14 with the Selenium Binding Protein 1 (AtSBP1), a protein proposed to be integrated in a regulatory network that senses alterations in cellular redox state and acts towards its restoration. We further show that SBP protein family interacts with AtGRXS16 that also contains a PICOT domain, like AtGRXS14.
Over the last few years, NAND flash manufacturers have steadily increased the number of bits stored per cell to achieve significant cost reductions. However, the increased density does not come without drawbacks. All key flash performance metrics, including latency and endurance, significantly degrade as bit density increases. Particularly, sustained write throughput is the worst affected as writes are roughly one order of magnitude slower than reads and further require precursory block erases in the background. As a result, many recent flash controllers operate flash blocks both in single-bit (high endurance and performance) and in multi-bit (high density) mode. In theory, such hybrid controllers are a great way of hiding flash technology limitations. A controller can use a small percentage of the flash blocks in single-bit mode as a cache which allows orders of magnitude higher write bandwidth and endurance in environments where the access patterns of the workload are skewed and bursty. In practice, however, many devices fall short of expectations when write performance varies significantly and utilization increases. We argue that a principled approach is required to understand the design trade-offs of hybrid NAND flash controllers. To this end, we develop a modeling framework for estimating the performance and endurance of hybrid controllers. The modeling framework computes the internal data movement generated by a hybrid controller by relying on advanced analytical models that offer both accurate and fast predictions. The data flow is then translated into higher-level metrics that quantify upper bounds for the overall performance of an SSD such as write throughput, latency, and device endurance. Using our modeling framework, we compare different controller architectures, identify their strong and weak points, and show that there is room to improve the efficiency of the hybrid controllers used today.
Despite its widespread use in consumer devices and enterprise storage systems, NAND flash faces a growing number of challenges. While technology advances have helped to increase the storage density and reduce costs, they have also led to reduced endurance and larger block variations, which cannot be compensated solely by stronger ECC or read-retry schemes but have to be addressed holistically. Our goal is to enable low-cost NAND flash in enterprise storage for cost efficiency. We present novel flash-management approaches that reduce write amplification, achieve better wear leveling, and enhance endurance without sacrificing performance. We introduce block calibration, a technique to determine optimal read-threshold voltage levels that minimize error rates, and novel garbage-collection as well as data-placement schemes that alleviate the effects of block health variability and show how these techniques complement one another and thereby achieve enterprise storage requirements. By combining the proposed schemes, we improve endurance by up to 15× compared to the baseline endurance of NAND flash without using a stronger ECC scheme. The flash-management algorithms presented herein were designed and implemented in simulators, hardware test platforms, and eventually in the flash controllers of production enterprise all-flash arrays. Their effectiveness has been validated across thousands of customer deployments since 2015.