A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is presented in this work. Advantages and disadvantages of the proposed methods of formation of high-resistive layers, their electrophysical characteristics and properties are examined. Limit parameters of the detector structures which can be achieved by using a combination of technological methods are analyzed.

An investigation of the distribution of the electrolyte-semiconductor capacitance barrier over the thickness of epitaxial layers of gallium arsenide doped with iron on a low-resistance substrate is described. It is shown that measurements of the barrier capacitance at low frequencies enables the position of the π-ν-junction, formed at the boundary of separation of the epitaxial layer and the substrate, to be accurately determined.

AbstractEs werden Ätzversuche an GaAs‐Flächen in As‐HCl‐GaCl‐H2‐Atmosphäre beschrieben.