The microstructure evolution of Cu nanostructured powders at different conditions of the ball milling is investigated by the x-ray diffraction analysis. The characteristics of as-milled Cu-powder microstructure in terms of crystallite sizes, type, and density of dislocations as well as twin-faults' density are determined by the whole peak-profiles' modelling of powder x-ray diffraction pattern. By comparing of both microstructure characteristics of Cu powder and the ball milling parameters, the dominant factors of ball milling, which affect on the concentration of twin faults, type, and density of dislocations as well as the size of crystallites, are revealed.

The microstructure evolution of Cu-nanostructured powders versus the ball milling conditions was investigated by whole peak profile powder pattern modeling method. This method allows defining in some approach the characteristics of as-milled Cu powder microstructure in terms of crystallite size, type and density of dislocations and twin faults density. It is shown that the change of microstructure characteristics of as-milled Cu powder versus the ball milling conditions (under constant time of the ball milling) depend on only some energy parameters of the milling, for example, average size of crystallite is uniquely defined by energy of the shock, whereas the portion of edge and screw components of dislocation structures depend on a ratio between normal and tangential components of shock.

The microstructure evolution of Cu-nanostructured powders versus the ball milling conditions was investigated using X-ray diffraction analysis. The characteristics of as-milled Cu powder microstructure in terms of crystallite size, dislocations and twin boundary densities were determined by fitting the simulated X-ray diffraction peak profiles to the experimental ones in order to establish a correlation between the powder microstructure and the ball milling parameters. It was shown that the simulated X-ray diffraction peak profiles agree satisfactorily with the experimental ones taking into account transmission electronic microscopy observations where twin boundaries and dislocations were observed.

Modern semiconductor lasers include a complicated layered structures with quantum wells and insulated buried layers introduced by selective implantation with He or H ions.The strain and defects induced by implantation may disturb the action of the laser.In present studies the most important methods of characterization were white beam Bragg case section topography and recording of rocking curves with a small 50 50 µm 2 probe beam.The investigations were performed in a special multilayers containing two relatively thick layers of AlGaAs separated by a thin layer with smaller Al concentration, covered by 0.3 µm GaAs cup.The structures were studied before and after implantation with 150 keV He ions at room temperature and 180º C. It was possible to reproduce the character of experimental rocking curves in numerically simulated using the Takagi-Taupin theory.In the computations we included the change of chemical composition and a strain profile being a sum of strain connected with epitaxial layers and the point defect distribution obtained with TRIM95.The necessary modification of the point defects distribution was flattening of the top part.The section topographs revealed stripes due to successive epitaxial layers and the strain modulation fringes due to the buried layer.In case of selective implantation the topographs revealed some contrasts due to strains at the edges of the implanted areas.

Modern semiconductor lasers include a complicated layered structures with quantum wells and insulated buried layers introduced by selective implantation with He or H ions.The strain and defects induced by implantation may disturb the action of the laser.In present studies the most important methods of characterization were white beam Bragg case section topography and recording of rocking curves with a small 50 50 µm 2 probe beam.The investigations were performed in a special multilayers containing two relatively thick layers of AlGaAs separated by a thin layer with smaller Al concentration, covered by 0.3 µm GaAs cup.The structures were studied before and after implantation with 150 keV He ions at room temperature and 180º C. It was possible to reproduce the character of experimental rocking curves in numerically simulated using the Takagi-Taupin theory.In the computations we included the change of chemical composition and a strain profile being a sum of strain connected with epitaxial layers and the point defect distribution obtained with TRIM95.The necessary modification of the point defects distribution was flattening of the top part.The section topographs revealed stripes due to successive epitaxial layers and the strain modulation fringes due to the buried layer.In case of selective implantation the topographs revealed some contrasts due to strains at the edges of the implanted areas.