The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (Dit) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both Dit and electric field. It can also be extended to SOI based low power devices.
Serguei Okhonin合作论文数2
roland scholz合作论文数1innovative silicon合作论文数1Erfurth Wilfried合作论文数1
Daniel Gloria合作论文数1Bon, O.合作论文数1Rauber, B.合作论文数1
Pastore, C.合作论文数1
Pin Su合作论文数1Cea Leti合作论文数1Manfred Reiche合作论文数1Soi Cmos合作论文数1
Oussama Moutanabbir合作论文数Succ Ctr Ville, Ecole Polytech Montreal1Samuel Boret合作论文数1
Ammar Nayfeh合作论文数Department of Electrical Engineering;Stanford University;Department of Electrical Engineering, Stanford University1
Ulrich Gösele合作论文数Max Planck Institute of Microstructure Physics1
Christine Raynaud合作论文数1P. Touret合作论文数1Victor Koldyaev合作论文数1
