The current – voltage, power – current, and spectral characteristics of high-power single-mode semiconductor lasers emitting at wavelengths of 1.5 – 1.6 μm are studied experimentally. It is shown that a laser with a cavity length of 1.6 mm and a mesa-stripe width of 3 μm mounted in a housing 11 mm in diameter may emit a power higher than 300 mW. Mounting of lasers on C-mounts makes it possible to achieve powers exceeding 400 mW. In the case of mounting in standard 14 pin DIL packages, the laser power at the exit of a single-mode fibre-optic cable (FOC) was no lower than 100 mW, which, taking into account 50 % losses upon radiation coupling into the FOC, corresponds to the laser diode power higher than 200 mW. It is shown that the differential resistance of a laser depends not only on the laser crystal length but also on the type of mounting (in copper housings 11 mm in diameter or on C-mounts). The dependences of the laser wavelength and spectral width on the pump current and ambient temperature are presented. The characteristic temperatures of laser diodes are determined.

A quantum cascade laser based on a strain-compensated Ga0.4In0.6As/Al0.58In0.42As heteropair is developed, which operates in the pulse regime in the wavelength range of 5.5-5.6 mu m at temperatures of up to at least 350 K. It became possible due to an increase in the quantum well depth and to the usage of the two-phonon depopulation mechanism for the lower lasing level. The calculated voltage defect is about 100 meV. The laser epitaxial hetero-structure was grown by the MOVPE method. It was investigated by the high-resolution X-ray diffraction technique. It is shown that the heterostructure has a high quality with bandwidths of main satellite peaks of 55 arcsec. The threshold current density is 1.6 kA cm(-2) at 300 K. The characteristic temperature is T-0 = 161 K for the temperature interval of 200-350 K. For the laser of size 20 mu m x 3 mm with cleaved mirrors, the maximum pulsed power is 1.1 W at 80 K and 130 mW at 300 K.

The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.

Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3–1.5 μm at liquid-nitrogen temperature. The stimulated-emission threshold is 30–70 kW/cm2.

AbstractHybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3–1.5 μm at liquid-nitrogen temperature. The stimulated-emission threshold is 30–70 kW/cm^2.

The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.

Short-period GaAs/AlGaAs superlattices, an active region, and a quantum cascade laser heterostructure have been grown by metalorganic vapor phase epitaxy, and their characteristics have been studied by high-resolution X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopy. The heterostructures have been used to produce quantum cascade lasers emitting near 10 μm. Their output pulse power at 77 K is above 200 mW.

A model is proposed for calculating the composition of GaAs x P1–x solid solutions, based on the iterative determination of the equilibrium partial pressures of the pyrolysis products of the starting reagents, followed by calculation of the composition of the solid solution in an adsorption–desorption model. The proposed model ensures good agreement between calculation results and experimental data.

A quantum cascade laser emitting in the spectral range of 9.7 μm at 77 K has been developed. The laser heterostructure based on GaAs/AlGaAs was grown by the MOCVD technology. In the pulsed operation mode, the threshold current density of ~2 kA/cm 2 and the emission power of above 200 mW have been obtained for the laser of the dimensions of 30 μm × 3 mm.

A pulsed quantum cascade laser emitting in the wavelength range 9.5 - 9.7 mm at 77.4 K is developed based on the GaAs/Al0.45Ga0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm(-2). The maximum output power of the laser with dimensions of 30 mu m x 3 mm and with cleaved mirrors exceeded 200 mW.

A pulsed quantum cascade laser emitting in the wavelength range at is developed based on the heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was . The maximum output power of the laser with dimensions of and with cleaved mirrors exceeded .

This work presents results of study of different AlGaInP light-emitting diodes by using Kelvin force probe microscopy. Study of current-voltage characteristics and electric field distribution had shown that for all type of experimental samples containing multiple quantum wells the most significant series resistance of heterostructures is determined by p-isotype heterojunction and confinement p-layer.

We report the simulation of power - current characteristics of high-power semiconductor lasers emitting in the range 1.5 - 1.55 mu m. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data.

The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the output optical power, the laser diodes are integrated into bars and arrays. Single laser diodes exhibit a high output power of ∼6 W in the pulse mode. The laser bars exhibit an output power of 20 W in the pulse mode. The highest achieved pulse output optical power for an array of 30 elements amounts to ∼110 W.

The results of experimental studies of forward current-voltage characteristics of LEDs with an active region consisting of the multiple (Al x Ga1–x )0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P quantum wells are presented. The experiment showed that increasing the number of quantum wells and decreasing the Al content in the Al x Ga1–x solid solution lead to an increase in the forward current at a fixed voltage. An analysis showed that the results obtained can be interpreted using the theory of diffusion charge transport in a double heterostructure with a narrow-bandgap layer, the thickness of which is many times larger than the thickness of a single quantum well. The proposed approach takes into account the carrier transport by tunneling through the barriers in an active region with multiple quantum wells.

We have developed the effective design of semiconductor heterostructures, which allow one to fabricate cw laser diodes emitting in the 750-790-nm spectral range. The optimal conditions for fabrication of GaAsP/AlGaInP/GaAs heterostructures by MOCVD have been determined. It is shown that the use of quantum wells with a precisely defined quantity mismatch reduces the threshold current density and increases the external differential efficiency. The results of studies of characteristics of diode laser bars fabricated from these heterostructures are presented.

This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range 1.5-1.6 mu m. We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures.