This paper presents a compact driver circuit with independent pixel-level temperature regulation for thermo-optic based 2D Nanophotonic phased arrays (NPAs) in light detection and ranging (LIDAR) and Virtual Reality (VR) applications. To minimize the interconnection density, the proposed driver unit uses only a single electrical contact to its corresponding NPA pixel for both heating and temperature measurement functions. The driver was fabricated using TSMC 65 nm technology and each unit is realized in an area of $15\ \mu\mathrm{m}\times 15\ \mu\mathrm{m}$ . The design enables scalable 3D heterogeneous integration between any tile-based NPA with pixel pitch below $15\ \mu\mathrm{m}$ and its electrical control system. The temperature regulation performance of the proposed circuit was characterized by intentionally introducing a ±20% variation to the load resistance to simulate the temperature deviation in the NPA. The measured phase errors are suppressed by the feedback controller to a maximum of $0.07\pi$ and an average of $0.02\pi$ within the full $2\pi$ phase shift operation range.

For many years, Resistive RAM (ReRAM) technology has been pursued as a potentially high yield 3D memory. Recent improvements include the addition of diode-select devices that reduce sneak path leakages. These memory structures can be made using only back-end-of-the-line processing steps. ReRAM materials are fully compatible with backend processes and the resulting memories are planar, stackable units. No active devices are present in these stacks. These devices are highly suitable for new memory architectures, such as edge computing or compute-in-memory. We have developed interlayer interconnect architectures that minimize individual cell sizes, which we disclose in this paper. Persistent problems remain. These include poor device yield and poor cycle endurance. These issues can be traced to the basic mechanism of ReRAM operation: the formation (and destruction) of conducting filaments creating the set and reset states. The tips of these filaments develop exceptionally high electric fields due to field-line compression (lightning rod effect). The filament tips will undergo field-forming rearrangement, leading to arc-over and ultimate device failure. In this paper, we describe alternative methods of conduction bridge formation in which these high fields are not necessary for realizing the set/reset cycle. In conventional ReRAM devices, current flow during read and write is perpendicular to the chip surface. In the structures we propose, current flow is horizontal with respect to this surface. We refer to these devices as HReRAMs. Process flows and characterization results for these structures will be prescribed in this paper.

The Nanophotonic Phased Array (NPA) is an emerging holographic display technology. With chip-scaled sizes, high refresh rates, and integrated light sources, a large-scale NPA can enable high-resolution real-time dynamic holographic displays. However, one of the critical challenges impeding the development of such large-scale NPAs is the high electrical power consumption required to modulate the amplitude and phase of each of the pixel elements. We argue that the modulation of all the elements on the array is, in fact, not necessary to produce a high-quality image. We propose a simple method that outputs the configuration of a sparse NPA, along with the amplitude and the phase required at each active pixel to generate the desired image at the observation plane. We identify the set of active pixels according to their optimized intensities. We observe that the brighter pixels have a greater influence on the target image, and it is these that we must focus on in image formation. Using as few as 10% of the total pixels from a dense 2D array of light-emitting elements, we show that a perceptually acceptable holographic image can be generated. We compare various sparse sampling methods through computational simulations and show that our proposed method gives superior qualitative and quantitative results. We believe our study will help advance research on sparse NPAs and facilitate the use of large-scale NPAs to display high-resolution 3D holographic images.

Holographic displays and computer-generated holography offer a unique opportunity in improving optical resolutions and depth characteristics of near-eye displays. The thermally-modulated Nanopho-tonic Phased Array (NPA), a new type of holographic display, affords several advantages, including integrated light source and higher refresh rates, over other holographic display technologies. However, the thermal phase modulation of the NPA makes it susceptible to the thermal proximity effect where heating one pixel affects the temperature of nearby pixels. Proximity effect correction (PEC) methods have been proposed for 2D Fourier holograms in the far field but not for Fresnel holograms at user-specified depths. Here we extend an existing PEC method for the NPA to Fresnel holograms with phase-only hologram optimization and validate it through computational simulations. Our method is not only effective in correcting the proximity effect for the Fresnel holograms of 2D images at desired depths but can also leverage the fast refresh rate of the NPA todisplay 3D scenes with time-division multiplexing.

Thermally modulated Nanophotonic Phased Arrays (NPAs) can be used as phase-only holographic displays. Compared to the holographic displays based on Liquid Crystal on Silicon Spatial Light Modulators (LCoS SLMs), NPAs have the advantage of integrated light source and high refresh rate. However, the formation of the desired wavefront requires accurate modulation of the phase which is distorted by the thermal proximity effect. This problem has been largely overlooked and existing approaches to similar problems are either slow or do not provide a good result in the setting of NPAs. We propose two new algorithms based on the iterative phase retrieval algorithm and the proximal algorithm to address this challenge. We have carried out computational simulations to compare and contrast various algorithms in terms of image quality and computational efficiency. This work is going to benefit the research on NPAs and enable the use of large-scale NPAs as holographic displays.

Introduction History, Geography, Population, and People Economy, Education, and Culture Korean Electronics Industry Background The Electronics Industry The Semiconductor Industry Impact of the Industry on the National Economy Semiconductor Industry The South Korean Industry Additional Semiconductor Technologies The Outlook for South Korean Technology Manufacturing Companies Government and University Interactions Packaging Products and Systems Korean Display Industry Government Support Introduction Legislative Interactions Government Sponsorship of R&D Observations and Conclusions The Role of the University Introduction Facilities Industrial Connections Educational Goals Summary Index

Proximity effect can affect thermal-modulated nanophotonic phased array holographic displays. The impact of proximity effect on holographic imagery is investigated and the improvement using proximity effect correction methods is demonstrated.

The ubiquitous flicker or 1/f noise deteriorates low-frequency (LF) signals. For high reliability in CMOS devices, factors leading to degradation of SNR in LF domain need to be understood and minimized, especially for devices processing low-frequency signals. With transistors scaling down, power consumption decreasing and advancement in system integration, portable integrated CMOS sensors are being used in labs, hospitals, space applications etc. In such field applications, continuous radiation exposure degrades the sensors as well as deteriorates the signal to noise ratio. Also, in certain applications, continuous operation of sensors with high voltage stress on transistors causes hot electron injection (HEI) which also deteriorates the SNR by increasing the trap density in the gate oxide and making the sensor unreliable over time. To address the issue of SNR deterioration and to understand the reliability aspects of the sensors due to such operational stresses, we present a study of the impact of γ$\textbf{radiation exposure and hot electron injection on flicker noise of CMOS transistors. While flicker noise has been characterized in other processes, we chose the commonly available, low cost 0.5 um CMOS process for our study.

Quantum tunneling by field emission from nanoscale features or sharp field emission structures for which the anode-cathode gap is nanometers in scale ("nano diodes") experience strong deviations from the planar image charge lowered tunneling barrier used in the Murphy and Good formulation of the Fowler-Nordheim equation. These deviations alter the prediction of total current from a curved surface. Modifications to the emission barrier are modeled using a hyperbolic (prolate spheroidal) geometry to determine the trajectories along which the Gamow factor in a WKB-like treatment is undertaken; a quadratic equivalent potential is determined, and a method of shape factors is used to evaluate the corrected total current from a protrusion or wedge geometry.

Field emission from "nano diodes" encounter strong deviations from the tunneling barrier presupposed in Fowler Nordheim theory. Modifications to the emission barrier are modeled using a hyperbolic geometry to find trajectories along which Gamow factor is found; a quadratic equivalent potential is determined, and a shape factor method is used to evaluate the total current from a protrusion or wedge geometry.

In this work, we investigate the integration of ultrathin galvanic cell batteries with high energy density and flexibility into the highly deformable wings of the flapping wing air vehicle (FWAV) known as “Robo Raven” that we previously developed for independent wing control. The goal of this research was to create a multifunctional wing structure that provides higher energy density than the existing, singular function, lithium polymer batteries currently being used to power the platform. The key areas of inquiry explored are the effect the integration of batteries has on the aerodynamic forces generated during flapping under simulated flight conditions, and whether there is an adverse effect on flight performance where the platform payload capacity is diminished for similar flight time. Upon investigation, we determine that the electrical performance of the battery is as expected after integration into the wing structure, while force generation is not significantly affected, which enhances flight time enhancement and/or payload capacity.

In this article we provide a brief history of some of the world's major efforts in X-ray lithography. We discuss the limitations and advantages of this approach in a variety of applications. These include the printing of mask layers in very-large-scale integrated circuits, the manufacture of high aspect ratio structures as a kind of “micro-3D printer,” and the possible use of the technique for imaging on non-planar surfaces. We conclude with a discussion of the potential future of the approach in microlithography.

This paper demonstrates a high-throughput fabrication method of gallium nitride (GaN) nanowire (NW) and sub-micron wire (SMW) arrays using a combination of projection lithography, plasma etching, and post-plasma wet etching techniques. Photoluminescence (PL), field emission scanning electron microscopy (FESEM), and I–V measurements were used to characterize the GaN NW/SMW devices. These NWs/SMWs can be used to create highly-sensitive and selective conductometric chemical/bio-sensors.

The infrared (IR) spectrum lies between the microwave and optical frequency ranges, which are well suited for communication and energy harvesting purposes, respectively. The long wavelength IR (LWIR) spectrum, corresponding to wavelengths from 8 μm to 15 μm, includes the thermal radiation emitted by objects at room temperature and the Earth's terrestrial radiation. Therefore, LWIR detectors are very appealing for thermal imaging purposes. In this chapter, we investigate the prospects of Mid-IR antenna coupled Metal-Insulator-Metal rectifying diodes to be used for LWIR detection and harvesting purposes. Considering the research presented in the literature on this subject, we introduce current challenges that lead to the future research directions. Moreover, we support the analysis on the antenna coupled tunneling diodes with our most recent results to draw a solid picture.