Accurately predicting the remaining useful life (RUL) of lithium-ion batteries (LiBs) is crucial for improving battery management system design and ensuring device safety. However, achieving accurate long-term predictions of aging trajectories is challenging due to error accumulation in multi-step ahead forecasts. This study shows that considering future internal resistance (R), which is related to the aging process, and the capacity regeneration phenomenon (CRP) that occurs during aging can help reduce error accumulation. Specifically, we propose a hybrid method that incorporates future R and CRP to predict the aging trajectories and RULs of LiBs. Experiment results demonstrate: (1) for the same charging/discharging policies and battery types, the proposed method can accurately predict the aging trajectory and RUL using only the first 20 cycles’ data (approximately 5% of the complete data); (2) for different charging/discharging policies and battery types, with transfer learning, the proposed method can predict the aging trajectory and RUL using the first 40 cycles’ data. These results demonstrate that the proposed model is both accurate in long-term prediction and robust for estimating the aging trajectory and RUL across various datasets.

The high entropy alloys (HEAs) are widely used in high temperature service environment (such as aviation engine blades) with bright application potential in additive manufacturing. Laser powder bed fusion (LPBF) is technology currently offers the best reproducibility and dimensional accuracy for part production. The unique atomic lattice structure of HEA makes its plastic deformation mechanism different from that of traditional dilution alloy, resulting in the strengthening effect of face-centered cubic high-entropy alloy different from that of traditional metal alloy materials. In this paper, Ni8Cr4Co4Fe6W2 was designed by means of composition control. Its spherical powders with uniform composition were successfully prepared by high temperature remelting spheroidization (PHTR) method, compared with gas atomization (GA) method. The strain rate sensitivity m values of GA-Selective Laser Melting and PHTR-Selective Laser Melting samples were 0.030 and 0.027, respectively. The hardness of Ni8Cr4Co4Fe6W2 high-entropy alloy showed a trend of continuous increase with the decrease of grain size, while the elastic modulus didn’t change much (PHTR-SLM is 193 Gpa and GA-SLM is 189 Gpa). The simulated value of the contact stress decreased by 23% compared with the theoretical value. The contact radius increased with the increase of plastic deformation in addition to the reduction of contact pressure. The printing sample value of the elongation, yield strength (YS) and Ultimate Tensile Strength (UTS) on PHTR-SLM has increased by 39.6%, 33.7% and 25.9%, respectively in additive manufacturing, compared to GA-SLM. The ability to produce refractory HEAs through PHTR method will make it possible to manufacture complex geometry shapes at a reasonable cost.

Integrated periodic structure reference materials are crucial for calibration in optical instruments and micro-computed tomography (micro-CT), yet they face limitations concerning a restricted measurement range, a single pattern type, and a single calibration parameter. In this study, we address these challenges by developing integrated periodic structure reference materials with an expanded measurement range, diverse pattern types, and multiple calibration parameters through a combination of photolithography and inductively coupled plasma (ICP) etching process. These reference materials facilitate high-efficiency and multi-value calibration, finding applications in the calibration of optical instruments and micro-CT systems. The simulations were conducted using MATLAB (R2022b) to examine the structure-morphology changes during the single-step ICP etching process. The variation rules governing line widths, periods, etching depths, and side wall verticality in integrated periodic structure reference materials were thoroughly evaluated. Linewidths were accurately extracted utilizing an advanced image processing algorithm, while average period values were determined through the precise Fast Fourier Transform method. The experimental results demonstrate that the relative errors of line widths do not exceed 17.5%, and the relative errors of periods do not exceed 1.5%. Furthermore, precise control of the etching depth was achieved, ranging from 30 to 60 μm for grids with line widths 2–20 μm. The side wall verticality exhibited remarkable consistency with an angle of 90° ± 0.8°, and its relative error was found to be less than 0.9%.

Micro/nanoscale tungsten probes are widely utilized in the fields of surface analysis, biological engineering,etc.amongst several others. This work performs comprehensive dynamic simulations on the influences of electric field distribution, surface tension and the bubbling situation on electrochemical etching behaviors, and then the tip dimension. Results show that the etching rate is reliant on the electric field distribution determined by the cathode dimension. The necking position lies in the meniscus rather than at the bottom of the meniscus. A bubble-free condition is mandatory to stabilize the distribution of OH(-)and WO(4)(2-)ions for a smooth tungsten probe surface. Such simulation-guidance enables the nanofabrication of probes with a high aspect ratio (10 : 1), ultra-sharp tip apex (40 nm) and ultra-smooth surface. These probes have been successfully developed for high-performance application with Scanning Tunneling Microscopy (STM). The acquired decent atomic resolution images of epitaxial bilayer graphene robustly verify the feasibility of the practical level application of these nanoscale probes. Therefore, these nanoscale probes would be of great benefit to the development of advanced analytical science and nano-to-atomic scale experimental science and technology.

In this paper, we present an in-situ measurement method to directly observe the distribution of the local electric field between vacuum microgaps. The measurement was performed in-situ inside a high resolution scanning electron microscope (SEM), and the nature of the local electric field was characterized through secondary electron contrast images with the aid of Rutherford scattering theory. Based on the regular fringes in these contrast images, the distribution of the local electric field could be extracted from the contour lines of the fringes while the magnitude of the local electric field could be evaluated qualitatively by the gradient of the contour lines. The finite element method (FEM) simulation and the three-electrodes imaging experiment were also conducted, and the obtained two-dimensional electric field distribution agreed well with the FEM simulation, suggesting that the in-situ visualization technique could be useful for determining the local field enhancement behavior for various geometrical configurations and microscale structures. A physical mechanism for the local electric field mapping is suggested. This study demonstrates the potential of SEM imaging for obtaining information about the local electric field within microelectronic structures and devices.