Renewable energy needs to be store in different energy forms for the energy transition away from fossil fuels. One of most promising forms is chemicals such as H 2 and C-based fuels obtained via electrochemical reactions. The common hinderance in such reactions is the sluggish oxygen evolution reaction (OER), which causes low energy efficiency in conversion devices. Developing highly active, earth-abundant OER electrocatalysts in alkaline media is necessary to boost the performance of such devices. Fe ion content in electrolyte is known to influence the OER-activity of metal oxide electrocatalysts. For example, the Fe incorporation in NiOOH is a well-established and important effect for OER.[1] Here, we present the effect of absorbed Fe on the OER activity of the epitaxial Ni-surface terminated LaNiO 3 thin films. The correlation between surface species and OER activity of electrocatalysts was investigated using surface-sensitive low-energy ion scattering and X-ray photoemission spectroscopies. We observe more than an order-of-magnitude boost in OER activity during initial cycling, from 0.15 mAcm -2 to 3.40 mAcm -2 at 1.60 V vs. reversible hydrogen electrode. The activity increase was mainly caused by the incorporation of up to 5 % Fe at the top surface of LaNiO 3 film (less than ~1 nm) even though only a very trace amount of Fe ion, 30 ppb, is present in the 0.1 M electrolyte of high purity KOH 99.99 %. Our results demonstrate that the disordered active surface phase, which develops even on single crystalline surfaces, is a complex interplay between the as-prepared (surface) crystalline structure, composition of the solid electrocatalyst and the liquid electrolyte, and has strong impact on the final OER activity, implying that we need to think differently about the crystalline electrocatalysts: crystalline bulk and dynamically changing surface layer. [1] L. Trotochaud, S.L. Young, J.K. Ranney, S.W. Boettcher, Nickel–Iron Oxyhydroxide Oxygen-Evolution Electrocatalysts: The Role of Intentional and Incidental Iron Incorporation, J. Am. Chem. Soc. 136 (2014) 6744–6753.

We study the electrocatalytic oxygen evolution reaction using in situ X-ray absorption spectroscopy (XAS) to track the dynamics of the valence state and the covalence of the metal ions of LaFeO3 and LaFeO3/LaNiO3 thin films. The active materials are 8 unit cells grown epitaxially on 100 nm conductive La0.67Sr0.33MnO3 layers using pulsed laser deposition (PLD). The perovskite layers are supported on monolayer Ca2Nb3O10 nanosheet-buffered 100 nm SiNx membranes. The in situ Fe and Ni K-edges XAS spectra were measured from the backside of the SiNx membrane using fluorescence yield detection under electrocatalytic reaction conditions. The XAS spectra show significant spectral changes, which indicate that (1) the metal (co)valencies increase, and (2) the number of 3d electrons remains constant with applied potential. We find that the whole 8 unit cells react to the potential changes, including the buried LaNiO3 film.

Correlated metals with high carrier density and strongly correlated electron effects provide an alternative route to achieve transparent conducting materials, different from the conventional degenerately doped wide‐bandgap transparent conducting oxides (TCO). The extremely low electrical resistivity and high optical transparency in the ultraviolet‐visible spectral range shown in 4d correlated metals present an advantage over conventional TCOs. However, most of the 4d correlated metals are grown epitaxially on single crystal substrates. Here, it has been shown that Ca 2 Nb 3 O 10 nanosheets with different buffer layers promote the growth of high‐quality 4d 2 SrMoO 3 films on fused silica substrates, overcoming the use of expensive and size‐limited single‐crystal substrates. The room temperature electrical resistivity of SrMoO 3 is as low as 61 µΩ cm, the lowest reported value on amorphous transparent substrates to date, without compromising its high optical transmittance. 4d 1 correlated metal SrNbO 3 on Ca 2 Nb 3 O 10 nanosheets also exhibits similarly high optical transmittance but a higher room temperature resistivity of 174 µΩ cm. These findings facilitate the use of highly conducting and transparent 4d correlated metals not only as TCOs on technologically relevant substrates for the applications in the ultraviolet‐visible spectral range but also as electrodes for other oxide‐based thin film technologies.

Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

For practical applications, tuning the metal-insulator transition (MIT) behavior of high-quality vanadium dioxide (VO2) on arbitrary substrates, such as Si and glass, is desirable. Here, we demonstrate the ability to tune the MIT temperature (TMIT) of VO2 films by growing them on NbWO6 (NWO) nanosheets on arbitrary substrates and varying the film thicknesses. The oxidation and crystal structure of VO2 films are determined by x-ray photoelectron spectroscopy and temperature-dependent x-ray diffraction, respectively. It is observed that as the film thickness increases, the TMIT also increases to the bulk value, 341 K, because of the increase in the rutile c-axis of VO2. The strain effect accompanying with the film thickness variation on NWO nanosheets contribute to the shortening of the rutile cR axis in thin films and, hence, the lowering of TMIT of VO2. Furthermore, the arbitrary underlying substrates have negligible influence on the MIT behavior of VO2 on NWO nanosheets. These results open up the possibility to more freely choose a technical substrate material for functional VO2 films and tune its MIT.

X-ray absorption spectroscopy (XAS) is a powerful and well established technique with sensitivity to elemental and chemical composition. Despite these advantages, its implementation has not kept pace with the development of ultrafast pulsed x-ray sources where XAS can capture femtosecond chemical processes. X-ray Free Electron Lasers (XFELs) deliver femtosecond, narrow bandwidth (Δ E/E < 0.5%) pulses containing ∼ 10^10 photons. However, the energy contained in each pulse fluctuates thus complicating pulse by pulse efforts to quantify the number of photons. Improvements in counting the photons in each pulse have defined the state of the art for XAS sensitivity. Here we demonstrate a final step in these improvements through a balanced detection method that approaches the photon counting shot noise limit. In doing so, we obtain high quality absorption spectra from the insulator-metal transition in VO_2 and unlock a method to explore dilute systems, subtle processes and nonlinear phenomena with ultrafast x-rays. The method is especially beneficial for x-ray light sources where integration and averaging are not viable options to improve sensitivity.

To benefit from the diverse functionalities of perovskite oxides in silicon-based complementary metal oxide semiconductor (CMOS) technology, integrating oxides into a silicon platform has become one of the major tasks for oxide research. Using the deposition of LaMnO3/SrTiO3 (STO) superlattices (SLs) as a case study, we demonstrate that (001) single oriented oxide SLs can be integrated on Si using various template techniques, including a single-layer buffer of STO prepared by molecular beam epitaxy (MBE) and pulsed laser deposition, a multilayer buffer of Y-stabilized zirconia/CeO2/LaNiO3/STO, and STO-coated two-dimensional nanosheets of Ca2Nb3O10 (CNO) and reduced graphene oxide. The textured SL grown on STO-coated CNO nanosheets shows the highest crystallinity, owing to the small lattice mismatch between CNO and STO as well as less clamping from a Si substrate. The epitaxial SL grown on STO buffer prepared by MBE suffers the largest thermal strain, giving rise to a strongly suppressed saturation magnetization but an enhanced coercive field, as compared to the reference SL grown on an STO single crystal. These optional template techniques used for integrating oxides on Si are of significance to fulfill practical applications of oxide films in different fields.

VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R and (-402)M1/(002)R by coating the bulk substrates with Ti0.87O2 and NbWO6 nanosheets, respectively, prior to VO2 growth. Temperature dependent X-ray diffraction and automated crystal orientation mapping in microprobe TEM mode (ACOM-TEM) characterized the high phase purity, the crystallographic and orientational properties of the VO2 films. Transport measurements and soft X-ray absorption in transmission are used to probe the VO2 metal-insulator transition, showing results of a quality equal to those from epitaxial films on bulk single-crystal substrates. Successful local manipulation of two different VO2 orientations on a single substrate is demonstrated using VO2 grown on lithographically-patterned lines of Ti0.87O2 and NbWO6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet-templated VO2 films for advanced lensless imaging of the metal-insulator transition using coherent soft X-rays is discussed.

Research into 2-dimensional materials has soared during the last couple of years. Next to van der Waals type 2D materials such as graphene and h-BN, less well-known oxidic 2D equivalents also exist. Most 2D oxide nanosheets are derived from layered metal oxide phases, although few 2D oxide phases can be also made by bottom-up solution syntheses. Owing to the strong electrostatic interactions within layered metal oxide crystals, a chemical process is usually needed to delaminate them into their 2D constituents. This Review article provides an overview of the synthesis of oxide nanosheets, and methods to assemble them into nanocomposites, mono- or multilayer films. In particular, the use of Langmuir-Blodgett methods to form monolayer films over large surface areas, and the emerging use of ink jet printing to form patterned functional films is emphasized. The utilization of nanosheets in various areas of technology, for example, electronics, energy storage and tribology, is illustrated, with special focus on their use as seed layers for epitaxial growth of thin films, and as electrochemically active electrodes for supercapacitors and Li ion batteries.

In order to integrate functional oxides with Complementary Metal Oxide Semiconductor (CMOS) materials, templates to ensure their epitaxial growth are needed. Although oxide nanosheets can be used t...