This work presents the design and analysis of a high-sensitivity Nanosheet Schottky Tunnel Field-Effect Transistors (NS-STFETs) for biosensing applications. The proposed device leverages Schottky source/drain contacts and stacked nanosheet geometry to enhance electrostatic control and tunneling efficiency. Device performance was investigated using Sentaurus TCAD simulations. The biosensor demonstrates promising characteristics, including an ION of 2.43 × 10–5 A, IOFF of 1.33 × 10–18 A, and ION/IOFF of 1013 for protein biomolecules with a dielectric constant of k = 8. Further analysis was carried out to evaluate the influence of biomolecules with varying dielectric constants (k = 1 to 20), different fill factors (25–100

The Schottky Tunnel FETs (S-TFETs) use metal– semiconductor Schottky junctions instead of standard doped sources to generate carriers through field emission across their tiny barrier which permits band-to-band tunneling (BTBT). The Schottky contact achieves its lowest OFF-state leakage and maintains a sub-60 mV/decade subthreshold swing (SS) because it eliminates heavy doping problems which create abrupt profile requirements and cause random fluctuations. This research presents a complete numerical investigation of interface trap charge (ITC) effects on the Double-Gate Schottky Tunnel Field-Effect Transistor (DG S-TFET) which utilizes metal– semiconductor Schottky junctions instead of traditional doped sources to achieve band-to-band tunneling (BTBT) with sub-60 mV/decade subthreshold swings and low leakage. The channel electric field distortion caused by fabrication defects leads to ITCs which make essential metrics such as subthreshold swing (SS) and Ion/Ioff ratio and RF figures-of-merit like transconductance (gm) and cut-off frequency (fT ) and transit time (τ) under low-voltage operation decline in value. The DG S-TFET demonstrates its capability for ultra-low-power high-frequency CMOS-compatible applications because its testing shows Ion/Ioff = 1010 and Ion =10−3 A/µm and gm =3×10−3 S/µm and low-voltage transit time of 3.5×10−5 ps.

Abstract In this research, we present a unique machine learning (ML)-based pipeline for simulating the I – V (current–voltage) characteristics of dual-gate fin field-effect transistor (FinFET) devices and improving them. The creative method builds models to effectively and precisely predict crucial outputs while maintaining the most reliable ML model. Several key input elements used in this work, including work function, fin height, temperature, and doping concentration, define the FinFET structure form and related doping profile. Another way we depict this is by splitting the notion of several variables and then the interactions between them in our dataset model. The ML models are then trained using this data to forecast the I – V behavior of FinFET devices. The current–voltage response is correctly predicted by the training model and has a strong correlation with traditional technology computer aided design (TCAD) simulations. Device model: less reliant on TCAD usage and time, more predictable. Fast and accurate DC characteristic forecasts are made possible by well-trained ML, which makes it a very dependable maintenance tool. The findings reveal that ML might be used to model the design and performance of advanced FinFET technologies and show that our framework achieves a strong optimization in the process with maintained high accuracy.

This article presents a novel n+ pocket hetero-dielectric modulated double source – double gate Schottky tunnel field effect transistor (DS-DG-STFET) device for the detection of phantom brain tissues are presented. The proposed nanogap device is under the gate region toward the source side, where the phantom brain tissues will be immobilised. A SiO2HfO2 combination of the dielectric is used to enhance the proposed device performance. A promising material for the Schottky FET biosensor is molybdenum disulfide (MoS2), which has an adjustable bandgap, a high surface-to-volume ratio, and a flat surface free of dangling bonds. The use of MoS₂ as the channel material offers high sensitivity, making it a promising option for low-cost biosensors, with potential for ultra-low concentration detection subject to further experimental and noise analysis validation. Using the SILVACO ATLAS TCAD simulation tool, we evaluated a comprehensive analysis of the device performance metrics, including drain current, transconductance, gain bandwidth product, cut-off frequency and sensitivity. The device tested both charged (positive/negative) and neutral biomolecules with improved sensitivity over a range of phantom brain tissues. Significant sensitivity increases are shown by performance comparisons, indicating a high potential for point-of-care diagnostic applications.

In this research, we presented a simulation of a MoS2-based dual-gate Schottky barrier tunnel field-effect transistor (D-G-STFET) with high-k dielectric (TiO2), emerging as a promising device for detecting biomolecules. The source and drain regions consist of metals selected based on their work functions. Furthermore, the channel is made of MoS2, with zirconium as the gate material, to enhance D-G-STFET biosensor performance. Using dual cavities etched beneath the dual gate electrode of the biosensor promotes biomolecule immobilization. Moreover, biomolecule immobilization, along with their charge density and dielectric constant (k), collectively alters the effective dielectric constant of the gate oxide. Which leads to changes in surface potential and drain current, ultimately determining the sensitivity of the biomolecules. We characterized the MoS2 effect on the proposed biosensor device in terms of drain current, potential, electric field, conduction and valence band energy, and sensitivity of charged and neutral biomolecules. Additionally, we analyzed the influence of temperature on the proposed and conventional devices. Here, the proposed device shows superior performance than the silicon and GaN material of conventional devices. Proposed and conventional device simulations are calculated using SILVACO TCAD tool.

ABSTRACT In this study, we analyzed the sensing characteristics of a MoS₂‐based dual‐drain, dual‐gate Schottky tunnel field effect transistor (DD‐DG‐STFET) based on the hybridization process to achieve groundbreaking sensitivity. The proposed device gives prominence to a nanogap under the gate electrode on the source region, where biomolecules will be immobilized. Molybdenum disulfide (MoS₂) is a cutting‐edge material for Schottky FET biosensors due to its tunable bandgap, high surface‐to‐volume ratio, and smooth surface without dangling bonds. MoS₂ as a channel material enables the detection of single biomolecules, making it an excellent, low‐cost option for biosensors. The SILVACO ATLAS TCAD tool is used to simulate the proposed device. The calibrated results are then used for an extensive evaluation of the drain current, I ON / I OFF ratio, and sensitivity. Sensitivity for certain biomolecules is measured for both charged and neutral (positive [+ n bio = 5 × 1011/cm 2 to 1 × 1012/cm 2 ], negative [− n bio = −5 × 1011/cm 2 to −1 × 1012/cm 2 ]) biomolecules. DD‐DG‐STFET sensitivity was calculated by examining steric hindrance across various patterns, including concave and convex, as well as 40% and 60% increases and decreases in charged biomolecules. The proposed biosensor shows that positively charged biomolecules can reach maximum sensitivities of 57 mV. The proposed structure demonstrates a breakthrough in sensitivity, making it highly suitable for use in label‐free biosensors, as shown in the comparative performance analysis.

This study investigates the application of dielectrically controlled Interconnected Multichannel Schottky FinFET (IC-S-FinFET) biosensor for the detection of healthy (MCF-10A) and cancerous cell lines of Hs578T, MDA-MB-231, MCF-7, and T47D. Here, the identification of distinct breast malignant cell types is established based on the variability in the dielectric constant. The evaluation of the biosensor sensitivity has been conducted for parameters such as drain current, subthreshold swing, and ION/IOFF characteristics. Also, the sensitivity of both the positively (5 x 1011Ccm-2) and negatively (-5 x 1011Ccm-2) charged biomolecules are evaluated for different breast cancer cell lines. In addition to that, the effect of the fill factor on the nanogap was examined for neutral-charged biomolecules. It is found that the sensitivity (Sn) of the designed biosensor device is improved for the rise in fill factor from partly filled to filled nanocavity. The linearity and noise characteristics of the biosensor are also examined. These findings suggest that IC-S-FinFET holds significant potential as a novel, label-free diagnostic tool for early and accurate detection of breast cancer, contributing to improved patient outcomes through timely and precise medical interventions.

This study investigates the performance of Schottky Complementary Multi-FinFET inverter for advanced technology nodes of 7 nm, 5 nm, and 3 nm using Sentaurus TCAD simulations. The impact of scaling on key device parameters, including threshold voltage (Vth), subthreshold swing (SS), drain-induced barrier lowering (DIBL), ON-state current (ION), and OFF-state current (IOFF), is systematically investigated. The results indicate that the 5 nm node exhibit superior performance compared to other nodes, with improved electrostatic control, higher drive current (0.00212 for n-FinFET, -1.16x10-4 for p-FinFET), and lower leakage current, making them suitable for low-power applications. Further, Voltage Transfer Characteristics (VTC) analysis was performed for the 5 nm node, demonstrating sharp transitions with well-defined logic levels and strong voltage gain. Additionally, transient analysis confirms high-speed switching operation with minimal propagation delay, highlighting the feasibility of Schottky-based FinFET inverters for next-generation ultra-scaled digital circuits. Furthermore, a comprehensive reliability assessment was carried out for the 5 nm node, focusing on analog/RF performance and VTC characteristics by varying temperatures from 100 K to 250 K. The study reveals that as temperature increases, there are notable shifts in key parameters, affecting the overall stability and efficiency of the device. The temperature-dependent analysis highlights the robustness of the Schottky-contacted FinFET inverter and provides critical insights into its applicability for future high-performance and energy-efficient logic applications under varying thermal conditions. These findings make the proposed device highly suitable for applications in microprocessors, data converters, IoT systems, and cryogenic computing platforms.

In this article, we propose InxGa1−xAs gate-all-around (GAA) MOSFET where In0.53Ga0.47As is used as channel. These devices excel in their ability to precisely modulate the electric field across the channel region, offering unparalleled control over charge carrier flow, while simultaneously exhibiting remarkable immunity to short-channel effects. To further improve device performance, a novel multi-channel architecture has been introduced, featuring 12 intricately arranged and isolated channels. This innovative design has yielded significant improvements in the device’s on-current characteristics, enabling higher-speed and enhanced overall functionality. However, it’s imperative to address the thermal challenges associated with the choice of In0.53Ga0.47As as the channel material. The inherent properties of this compound introduce self-heating effects, which can adversely impact device reliability and efficiency, particularly under high-power operating conditions. Effectively mitigating these thermal concerns through advanced thermal management techniques and material optimization strategies, an unique heat sink is designed for self-heating reduction.

In this script, a Gallium Nitride (GaN)-based FinFET structure is proposed with a multi-channel device that is designed and simulated. Here, the 3D-Sentaures TCAD simulator is used to investigate the analog/radio frequency performance and linearity of the MultiFin-Schottky Barrier FinFET with different temperatures of 100-400 K. The proposed device underwent a temperature analysis, where critical parameters include drain current, ION/IOFF ratio, Transconductance (gm), higher-order terms (gm2 and gm3), Gain Bandwidth Product (GBP), Cut-off Frequency (fT), Transit Time (tau), Transconductance Generation Factor (TGF), Transconductance Frequency Product (TFP), Voltage Input Intercept Point (VIP2, VIP3), Input Intercept Point (IIP3), and Third Order Intermodulation Distortion (IMD3) is thoroughly examined. Thus, the proposed GaN-based FinFET validates as a strong potential contender for GaN-based analog/RF applications. This study designs and simulates a Multifin Schottky Barrier FinFET using Sentaurus TCAD to explore the impact of temperature variation on Analog/Radio Frequency and linearity performance. Key parameters such as drain current, Gain Bandwidth Product (GBP), Transconductance Generation Factor (TGF), Transconductance Frequency Product (TFP), and Voltage Input Intercept Points (VIP2, VIP3) are analyzed to assess analog/RF efficiency under temperature variations. image

In this article, we propose In x Ga 1-x As gate-all-around (GAA) MOSFET where In 0.53 Ga 0.47 As is used as channel. These devices excel in their ability to precisely modulate the electric field across the channel region, offering unparalleled control over charge carrier flow, while simultaneously exhibiting remarkable immunity to short-channel effects. To further improve device performance, a novel multi-channel architecture has been introduced, featuring 12 intricately arranged and isolated channels. This innovative design has yielded significant improvements in the device's on-current characteristics, enabling higher-speed and enhanced overall functionality. However, it's imperative to address the thermal challenges associated with the choice of In0.53Ga0.47As as the channel material. The inherent properties of this compound introduce self-heating effects, which can adversely impact device reliability and efficiency, particularly under high-power operating conditions. Effectively mitigating these thermal concerns through advanced thermal management techniques and material optimization strategies, an unique heat sink is designed for self-heating reduction.

The increasing occurrence of traffic accidents necessitates innovative solutions to enhance vehicle safety and improve accident analysis. This paper presents the development of an Event Data Recorder (EDR) system specifically designed for autonomous vehicles, utilizing Internet of Things (IoT) technology. The system integrates various sensors, including 3-axis gyroscope and a 3-axis accelerometer, flame sensors, smoke sensors and collision switches with a microcontroller equipped with Bluetooth and Wi-Fi capabilities. The microcontroller manages data collection, processing and communication, capturing essential information such as vehicle movement, orientation, fire risks, smoke detection and collision impacts. The system's decision-making algorithm triggers alerts based on sensor thresholds and collision detection. In the event of an accident, the system utilizes a GPS module to transmit precise location data (latitude and longitude) to emergency contacts and medical facilities via the Blynk application. The Blynk application also provides remote access to accident and sensor data for further analysis. Initial testing of the prototype demonstrated its ability to accurately detect and respond to simulated accident conditions, indicating its potential for real-world application. By enabling timely medical intervention and detailed accident analysis, it plays a crucial role in advancing vehicle safety.

This paper proposed analytical modeling of a Schottky tunnel field-effect transistor (STFET)-based biosensor with adjusted gate oxide. This model is developed by resolving the Poisson's equation and calculating the parabolic potential lateral to the channel depth. The special property of the bio-transistor, which serves as a biosensor, is then included in the analytical modeling of drain current. After the biomolecule interacts with the bio-transistor, a change in the drain current was employed as a metric to determine the sensitivity. The advanced analytical modeling explored several device restrictions. A device simulation is used to maintain and validate the established and planned characteristic trend. Consequently, the suggested model can be the right solution for the best design and fabrication of a biosensor.

This article mainly focuses on the impact on interface trap charges (ITCs) on dual gate source-drain Schottky barrier tunnel field effect transistor (D-G-S-D-STFET) using a high-k dielectric material. Here the high-k material raises the coupling capacitance between the channel and the gate electrode, therefore increases the charge concentration more than a conventional device because of the additional dual-source region. A higher Ion/Ioff current ratio and a reduced off-state leakage are obtained in the design of D-G-S-D-STFET. Moreover, the comparison of the D-G-S-D-STFET device is made with both the dual-metal gate TFET and conventional STFET. Further, the DC and analog/RF performances are characterized by Silvaco TCAD in terms of transfer characteristics (ID–VGS), cut-off frequency (fT), transconductance (gm), gain bandwidth product (GBP), transconductance generation factor (TGF), and transconductance frequency product (TFP). Comparatively to the conventional structures at a gate length of 40 nm has been observed that the Cut-off Frequency (fT) and the TGF are increased in the proposed device to 60 GHz and 259 V−1 range respectively with the positive and negative trap charges. Hence, the results verify that the D-G-S-D-STFET is more suitable for high-frequency applications.

A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO2 is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region is created at the source side of the channel. Physical and electrical characteristics of the proposed device are compared with conventional double gate Schottky barrier MOSFET. It has been observed that the proposed device exhibits better performance, with a higher ION/IOFF ratio and lower subthreshold slope. The high-κ dielectric, along with the SiGe pocket region, improves tunneling probability, while aluminum, along with SiO2 at the drain side, broadens the drain/channel Schottky barrier and reduces the hole tunneling probability, resulting in a reduced OFF-state current. Further, the proposed device is used as a biosensor to detect both the charged and neutral biomolecules. Biosensors are made by creating a nanocavity in the dielectric region near the source end of the channel to capture biomolecules. Biomolecules such as streptavidin, biotin, APTES, cellulose and DNA have unique dielectric constants, which modulates the electrical parameters of the device. Different electrical parameters, viz., the electric field, surface potential and drain current, are analyzed for each biomolecule. It has been observed that drain current increases with the dielectric constant of the biomolecules. Furthermore, the sensitivity and selectivity of the proposed biosensors is better than that of conventional biosensors made using double gate Schottky barrier MOSFETs. Sensitivity is almost twice that of a conventional sensor, while selectivity is six to twelve times higher than a conventional one.

In this paper, a novel structure of Double Gate Schottky Barrier Tunnel Field Effect Transistor (DG-SBTFET) has been designed and simulated. The DG-SBTFET has two sources (NiSi) and two gate metals with an HfO2. Silvaco-TCAD simulator has been used for investigating the analog and radio frequency performance of the DG-SBTFET. The proposed device (DG-SBTFET) is compared with the conventional devices in terms of electrical parameters including ION current, ION/IOFF ratio, RF performance including transconductances (g(m)), cut-off frequency (f( T )), transit time (r), gain bandwidth product (GBP), transconductance generation factor (TGF), and transconductance frequency product (TFP). Further, we simulate the linearity characteristics of the DG-SBTFET device is compared it with other conventional devices, including the second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), and third-order input intercept point (IIP3). Hence, the proposed device (DG- SBTFET) is suitable for low-power and high-frequency applications.

A novel device architecture of a dual cavity charge plasma-based Schottky Barrier MOSFET (DC CP SB-MOSFET) is proposed and investigated for a wide range of biosensing applications. A dual nanogap cavity is created at the source and drain (S/D) regions under the S/D extension in the proposed device. To pattern the S/D regions, erbium silicide (ErSi) as a metal electrode and hafnium (Hf) metal as an extension of S/D is incorporated to induce the Schottky effect and electrons, respectively. The proposed device uses the concept of dielectric modulation in conjunction with Schottky barrier tunneling for the detection of biomolecules. The charge plasma technique effectively modulates the S/D Schottky tunneling barrier. The presence of different bio-molecules is modeled by their dielectric constant (k) and charge densities (p). The behavior of the device for various bio-molecules is investigated using an energy band diagram (EBD), electric field, surface potential, and tunneling rate. Moreover, analysis of the sensitivity in terms of I ON , I ON /I OFF , sub-threshold slope (SS), and V th is studied and explored. The proposed device effectively detects both neutral and charged biomolecules and exhibits several advantages such as higher sensitivity, being free from doping-related issues, and being immune to short-channel effects.

In this study, the performance of a Dual gate source drain schottky barrier tunnel field effect transistor (D-G-S-D-STFET) is analysed using a high k dielectric composed of HfO 2 and a low k dielectric composed of SiO 2 , respectively. The DC and the analog /RF performances of the device are examined the in-depth DC performance analysis, like transfer characteristics ($\mathrm{I}_{\mathrm{D}}-\mathrm{V}_{\mathrm{GS}}$), and the RF performances like transmission frequency $(\mathrm{f}_{\mathrm{T}})$, and transconductance generation factor (TGF) are simulated using SILVACO TCAD. It has been observed that the transmission frequency $(\mathrm{f}_{\mathrm{T}})$ is in enhanced in the proposed device in the THz range compared to the conventional structures at $(\mathrm{L}_{\mathrm{G}})$ of 50nm. Further, the proposed device has shown lower power consumption, a maximum $\mathrm{I}_{\mathrm{ON}}/\mathrm{I}_{\mathrm{OFF}}$ ratio and higher ON current are observed. Therefore, proposed device has significant potential for use in applications requiring low power and high frequency.

This paper investigates the performance of the gate all around junction-less tunnel field effect transistor (GAA-JLTFET) device with Metal-dielectric-metal–insulator-semiconductor (MDMIS) configuration for low leakage SRAM design. The proposed device structure (MDMIS-GAA-JLTFET) effectively suppresses the subthreshold swing (SS) of the transistor and produces a lower SS of 15 mV/decade. The use of high-k dielectric layer generates a high on current of 1.69 mA/µm, and supress an off current up to 10 –18 A/µm which results due to blocking of source tunnelling current in the off-state. The effect of high-k dielectric is optimized using ATLAS tool to make sure that the proposed device structure is capable for low leakage SRAM design. The use of high-k material as an insulator in MDMIS structure assured it to be used in low leakage memory system. The promising capability of proposed structure makes the 6 T- SRAM cell structure lossless. Further, the simulated SRAM cell is compared with CMOS based SRAM which ensures that’s the proposed MDMIS based SRAM is suitable for low leakage memory system.

In this review, we discussed highly sensitive biosensor devices which is having a more attractive, wide scope and development in the sensing field. Biosensor devices can detect the charged and neutral charged biomolecules such as protein, nucleic acids, antibody agents and viruses. Due to these highly sensitive biosensor devices, we mainly focused on schottky tunnel field-effect transistors (STFET), these transistors have unique properties such as enhanced transconductance and gate controllability, low leakage current etc. In addition, we studied the performances and challenges of STFET by dielectric modulation doping concentration, dielectric modulation, and heterostructure devices. Further, we have reviewed the comparison of STFET and conventional devices. This article reviews mainly on the study of high sensitivity analysis of STFET and modified Schottky-TFET structures for the use of biosensing applications.