An electric-field regulation layer Modified Uni-Traveling-carrier photodiode (EFRL-MUTC-PD) is proposed to improve bandwidth and saturation output. With optimized electric-field regulation layer doping, the 8-μm device achieves a 130 GHz 3 dB bandwidth, and 11.54 dBm RF output power.

Quantum dot (QD) distributed feedback (DFB) lasers have emerged as promising candidates for various applications, including silicon photonic integrated circuits, optical communications, and data centers. However, conventional 1.3 mu m InAs/GaAs QD DFB lasers still suffer from high threshold current densities (typically >600 A cm(-2)), caused by significant optical losses, which can hardly meet the requirements of energy efficient applications. In this work, a buried grating design is proposed to minimize optical losses caused by grating etch depth nonuniformity, together with optimized regrowth processes. As a result, the threshold current is reduced to a record low value of 4.4 mA, corresponding to a threshold current density of 110 A cm(-2). The devices demonstrate a maximum single-facet output power of 5 mW, a slope efficiency of 0.11 W A(-1), a side-mode suppression ratio of 47 dB, and an operating temperature up to 85 degrees C. These results represent an important step toward the integration of efficient and reliable 1.3 mu m QD DFB lasers in silicon photonic integrated circuits for practical data communication systems.

The sensing performance of carbon-based flexible strain sensors is largely governed by processing parameters. Therefore, the exploration of optimal processing parameters is of great significance to the enhancement of material properties. However, the complex coupling among multiple variables renders conventional trial-and-error optimization inefficient. Here, a data-driven prediction–optimization strategy integrating design of experiments (DoE) with machine learning (ML) is established to accelerate the regulation of sensing performance in a thermoplastic polyurethane/carbon nanotube-carbon fiber/thermoplastic polyurethane (TPU/CNTs-CF/TPU) strain sensor. Uniform and information-rich experimental datasets are constructed within a high-dimensional parameter space, and a multilayer perceptron (MLP) model is trained to characterize the relationship between processing parameters and sensing performance. SHAP-based interpretability analysis is further employed to quantitatively elucidate the contribution mechanisms of key factors, including carbon loading and carbon nanotube ratio, thereby guiding targeted experiments in high-sensitivity regions and enabling iterative optimization through dataset expansion. As a result, the sensor sensitivity is markedly improved, with the gauge factor (GF) increasing from 15 to 105 while maintaining high predictive accuracy (R2 = 0.96). The trained model is subsequently used to screen 600 randomly sampled parameter combinations, from which two optimal candidates are identified and experimentally validated, yielding relative prediction errors as low as 2.3% and 3.1% at 80% strain. Moreover, the optimized sensors exhibit excellent stability under cyclic loading and human-motion monitoring. This work provides an efficient and interpretable paradigm for regulating material–process–performance relationships in flexible electronics, substantially reducing experimental cost and offering broad methodological guidance for high-performance flexible sensing systems.

The beneficial impact of the piezoelectric effect, arising from internal polarization, on the photocatalytic performance has been extensively documented. In this study, Bi13S18Br2 and Bi13S18I2 nanoneedle-like photocatalysts with piezoelectric effect were successfully synthesized via a coprecipitation method, and their potential as antibacterial agents for marine antifouling applications was investigated. The experimental results showed that under simultaneous exposure to light and simulated wave-induced mechanical stimulation, the piezo-photocatalytic antibacterial rates of Bi13S18Br2 and Bi13S18I2 against Pseudomonas aeruginosa could reach 100% and 97.9%, respectively, and against Staphylococcus aureus could reach 95.5% and 91.7%, respectively. Moreover, radical trapping experiments and electron spin resonance (ESR) results revealed that superoxide radicals (center dot O-2(-)) and photogenerated holes (h(+)) were the primary reactive species during the piezo-photocatalytic antibacterial process. Density functional theory (DFT) calculation results elucidated the structural and electronic differences between Bi13S18Br2 and Bi13S18I2, revealing that the halogen atoms indirectly modulate the band structure of the Bi-S framework by influencing the orbital hybridization, which, in turn, affects light absorption. In addition, due to the low electron localization function (ELF) localization of Br, it optimized the electron-phonon coupling and carrier migration efficiency of Bi13S18Br2, thereby endowing it with superior piezoelectric performance compared to Bi13S18I2. This work provided insights into the in-depth structural understanding of Bi13S18Br2 and Bi13S18I2 and also offered suggestions for developing high-efficiency marine antifouling piezo-photocatalysts through rational structural design.

Heterogeneous radio-frequency (RF) microsystem integration is pivotal for overcoming the physical limitations of monolithic integration, enabling the low signal transmission loss and high operating frequencies demanded by next-generation communication networks. Glass interposers, characterized by inherently low dielectric loss, exceptional planarity, and highly tunable coefficient of thermal expansion, have emerged as an ideal platform for millimeter-wave (mmWave) RF microsystems. In this study, we propose a high-density, low-noise RF integration technology utilizing an embedded glass fan-out process. To address the challenges of glass micromachining, laser-induced deep etching (LIDE) was employed to fabricate high-precision cavities with superior verticality and minimal sidewall roughness for seamless die embedding. Subsequently, through an optimized chemical-mechanical polishing (CMP) process, the surface roughness of the redistribution layer (RDL) is reduced by 97%, successfully suppressing the transmission loss to below 0.25 dB/mm. A compact Ka-band microsystem integrating the low-noise amplifier and the antenna was designed and fabricated, featuring an optimized Chebyshev antenna array and a Klopfenstein taper transition for broadband impedance matching. Furthermore, we demonstrate a heterogeneously integrated Ka-band transceiver microsystem that combines high-performance GaN-based amplifiers with a cost-efficient silicon-based switch. The integrated transceiver exhibits a transmit gain of 26.08 dB and a receive noise figure of 2.73 dB at 28 GHz, within an ultra-compact footprint of 6 × 3 mm². This work provides a highly scalable and robust heterogeneous integration solution for high-performance, multi-functional mmWave microsystems in 5G-Advanced and future 6 G networks.

Silicon-based tubular 3D photodetectors (St3dPDs) play a significant role in the fields of biomimetic vision and military surveillance due to their wide-angle detection ability, low cost, high integration density, and the potential for self-powered operation. However, to the best of our knowledge, such photodetectors have not achieved self-powered operation, mainly due to the challenge of constructing a tubular heterostructure and designing an electrode compatible with it. In this work, a self-powered St3dPD was successfully fabricated by growing high-quality III-V semiconductor layers on silicon via molecular beam epitaxy, followed by mechanically guided self-rolling of U-shaped graphene/GaAs/InGaAs heterostructures onto preset planar electrodes. The as-fabricated photodetector realized self-powered operation from ultraviolet to near-infrared, with a responsivity of 28.9 mA/W, a fast rising/falling time (τr/τf) of 514/742 μs, a detectivity of 8.03 × 106 Jones, and omnidirectional detection ability within a wide-angle range of ±70° under 638 nm laser illumination. Our work provides a method for self-powered operation, contributing to the development of multifunctional devices.

We demonstrate optimized InAs/GaAs quantum dot microdisk lasers monolithically integrated with a SiN bus waveguide on silicon, achieving a coupling efficiency of 0.420 from the microdisk laser to the SiN waveguide.

Nanoscrolls derived from flat transition metal dichalcogenide (TMD) monolayers and their corresponding heterostructures exhibit considerable potential for applications in next-generation electronic and optoelectronic devices. However, a predictive theoretical framework for the precise structure of nanoscroll with in-plane heterostructure is currently lacking. In this work, we establish an analytical thermodynamic model based on energy minimization to describe the stable structure of nanoscrolls formed from in-plane Janus TMD/traditional TMD heterostructures with arbitrary number of segments. The model elucidates the roles of spontaneous curvature, bending stiffness, van der Waals interaction, compositional ratio and total length as the key controlling parameters for inner radius. For validation, we perform large-scale molecular dynamics (MD) simulations using a developed hybrid potential accounting for both intralayer and interlayer interactions, capturing the complete spontaneous scrolling process of the heterostructured nanoribbons. The inner radii obtained from MD simulations show agreement with the model. Furthermore, we extend the investigation from nanoribbons to nanoflakes with in-plane heterostructures to explore their scrolling dynamics and demonstrate the resultant complex morphologies. This work proposes a theoretical framework connecting material properties to nanoscroll structure, providing a guidance for the on-demand design of functional nanodevices based on nanoscrolls.

Temperature is a fundamental state parameter in thermodynamics. Accurate measurement of thermodynamic temperature in the deep cryogenic regime (below 24.5561 K) is critically important for advanced scientific research. Establishing an internationally recognized temperature standard requires fulfilling two key prerequisites: first, obtaining high-accuracy thermodynamic temperature data through primary-standard measurement devices; and second, conducting rigorous verification in a primary-level international comparison facility to secure authoritative validation from international metrological organizations. Consequently, the investigation of international comparison apparatus is as vital as the development of primary-standard thermometry devices. This study employs a numerical simulation approach. The cooling process of a 5–24.5 K international comparison facility was first validated against experimental data. Building upon this foundation, the research was extended to a 2–5 K primary-standard measurement device, with a systematic analysis of its global cooling behavior and temperature fluctuations in key components. Finally, the proposed methodology provides theoretical guidance for the thermal design, uncertainty evaluation, and structural improvement of primary thermodynamic temperature measurement systems operating below 5 K.

Bionic stepping piezoelectric actuators such as stick-slip or inchworm actuators demonstrate important applications in semiconductor manufacturing and active optics, where high-speed and high-precision motion capabilities, as well as load performance, often involve a trade-off arising from distinct actuation mechanisms. This study proposes a compact piezoelectric actuator based on biomimetic driving principles combining the advantages of stick-slip and inchworm actuations by employing only two piezoelectric stack units. The design comprises a multifunctional driving foot based on a flexible triangular mechanism and a clamping foot based on a spring hinge. The asymmetrical structure features displacement amplification and enables combined lateral and coupling motions, supporting a hybrid driving principle to achieve both stick-slip and inchworm motions from a performance perspective. A prototype of the designed piezoelectric actuator was fabricated to verify its feasibility and performance. The experimental results show that the actuator achieves a maximum speed of 52.89 mm/s and a maximum output force of 24.52 N, with a motion resolution of 23 nm, which significantly outperform existing results in the literature.

The practical application of two-dimensional MXenes in the field of piezoelectric catalytic antifouling is hindered by their inherent instability and insufficient active sites. To address this, we report a strategy for functionalizing Ti3C2 MXene via in situ alkaline oxidation, specifically by reconfiguring the surface termination groups and terminating the MXene surface with TiO2, to construct a heterostructure Ti3C2 MXene/TiO2 piezocatalyst. This approach not only stabilized the MXene structure but also significantly enhanced its piezocatalytic activity. The uniform growth of TiO2 nanowires on MXene layers, as confirmed by SEM and XRD, created a tightly coupled 1D/2D heterointerface. The optimized heterojunction exhibits excellent piezoelectric catalytic antibacterial efficiency under dark conditions, achieving antibacterial rates of 95.94% (Escherichia coli), 96.83% (Pseudomonas aeruginosa), and 78.2% (Staphylococcus aureus). It also demonstrates a high transient current density (21.89 μA cm-2) and outstanding cycling stability (the performance degradation was less than 7% even after 5 cycles). Combined experimental and DFT analyses reveal that the built-in electric field and work function difference at the heterojunction interface efficiently drive the charge separation and transfer, with ˙O2- and ˙OH being the primary reactive species. This work demonstrates a viable route for the performance enhancement and functional expansion of MXene, providing an effective reference for its application in mechanically driven antifouling technologies.

Objective Linear polarization photodetectors play a crucial role in advanced optoelectronic systems by enabling the acquisition of polarization information, such as polarization angle and degree, which significantly enriches the dimensionality of optical sensing beyond intensity, wavelength, and spatial distribution. By integrating polarization-sensitive detection with imaging systems, enhanced target recognition accuracy and discrimination capability can be achieved, offering great potential in applications including polarization imaging, optical communication, optical computing, aerospace sensing, and military camouflage recognition. Recently, rolled-up tubular photodetectors fabricated via micro-/nano-scale self-assembly have attracted increasing attention due to their intrinsic omnidirectional light-receiving capability and compact three-dimensional architecture. Although several tubular linear polarization photodetectors have been reported, most of them operate only in a single working mode, either photovoltaic or photoconductive, which severely limits their functionality and adaptability to diverse application scenarios. The realization of dual-mode linear polarization detection in a single tubular device remains highly challenging, mainly due to constraints imposed by electrode configuration, carrier transport pathways, and the conflicting material requirements of photovoltaic and photoconductive mechanisms. In this work, we aim to address these challenges by proposing and demonstrating a dual-mode linear polarization photodetector based on a graphene/MoS2/III-V semiconductors tubular heterostructure, enabling both self-powered photovoltaic operation and high-gain photoconductive operation within one unified device platform. Methods The dual-mode linear polarization photodetector is fabricated using a rolled-up tubular assembly technique driven by a strained III-V semiconductor bilayer grown on a GaAs substrate. The epitaxial structure consists of GaAs and InGaAs layers separated by a selectively etched AlGaAs sacrificial layer, which enables spontaneous rolling upon release. Monolayer MoS2 and monolayer graphene, prepared via chemical vapor deposition, are sequentially transferred onto the patterned epitaxial structure before the rolling process. After release, a graphene/MoS2/GaAs/InGaAs radial heterostructure is formed within the tubular architecture. A carefully designed coplanar three-electrode configuration is employed to decouple carrier transport pathways for different operating modes. In the photovoltaic mode, the middle electrode and one side electrode collect photogenerated carriers transported radially across the heterojunction under the built-in electric field, enabling self-powered operation at zero bias. In the photoconductive mode, the two side electrodes are used to form an axial carrier transport channel through graphene under an external bias, allowing high photoconductive gain. MoS2 serves as the polarization-sensitive absorption layer due to its strain-induced anisotropy after rolling, while graphene provides a high-mobility carrier transport channel to suppress recombination and enhance carrier collection efficiency. Comprehensive characterization techniques, including scanning electron microscopy, Raman spectroscopy, electrical transport measurements, spectral response analysis, polarization-dependent photoresponse measurements, and time-resolved photoresponse testing, are employed to systematically evaluate the device performance under both operating modes. Results and Discussions The fabricated dual-mode photodetector exhibits broadband photoresponse covering a wide spectral range from 300 to 950 nm, spanning the ultraviolet, visible, and near-infrared regions. Under 638 nm illumination, the device demonstrates excellent performance in both photovoltaic and photoconductive modes. In the photovoltaic mode at zero bias, the device shows a maximum responsivity of 125 mA/W at low illumination intensity, which represents one of the highest reported values for photovoltaic-mode tubular photodetectors. The specific detectivity is calculated to be 2.74 & times;1011 Jones, benefiting from the low dark current of 1.3 & times;10-11 A and efficient carrier separation. Time-resolved measurements reveal fast response dynamics, with rise and fall times of 360 & micro;s and 610 & micro;s, respectively, outperforming most previously reported photovoltaic tubular photodetectors. A dichroic ratio of 1.51 is also obtained in photovoltaic mode, indicating self-powered linear polarization discrimination capability. Furthermore, the device successfully realizes self-powered linear polarization imaging without external bias, clearly resolving polarization-dependent contrast in patterned images, which highlights its potential for compact polarization-resolved imaging systems. In the photoconductive mode under an applied bias voltage of 1 V, the device exhibits significantly enhanced photoresponse due to photoconductive gain mediated by graphene's high carrier mobility. The responsivity reaches 288 A/W under a low illumination intensity, with a corresponding specific detectivity of 1.5 & times;109 Jones. The dichroic ratio remains at 1.22, demonstrating that polarization sensitivity is preserved under photoconductive operation. The device shows negative photoconductive behavior, which is attributed to photoinduced carrier injection into graphene and subsequent modulation of its carrier concentration. Additionally, defect-assisted carrier trapping and relaxation in MoS2 lead to slow recovery dynamics, which, although limiting response speed, enable the emulation of optoelectronic synaptic behaviors, including learning, inhibition, and paired-pulse facilitation, demonstrating the device's potential for neuromorphic optoelectronic applications. Conclusions In this paper, a dual-mode linear polarization photodetector is successfully fabricated by integrating two different two-dimensional materials, graphene and MoS2, into III-V semiconductors tubular heterostructure combined with a rationally designed coplanar three-electrode configuration. In this architecture, MoS2 serves as the polarization-sensitive medium, while graphene provides a high-mobility carrier transport channel under photoconductive operation, enabling the realization of dual-mode linear polarization detection within a single tubular device. The photodetector exhibits pronounced photoresponse over a broad spectral range from 300 to 950 nm, covering the ultraviolet to near-infrared regions. Under 638 nm illumination, the device demonstrates outstanding performance in both operating modes. In the photovoltaic mode at zero bias, a dichroic ratio of approximately 1.51 and a responsivity of 125 mA/W are achieved, representing the highest responsivity reported so far for photovoltaic-mode tubular dual-mode linear polarization photodetectors. In addition, a high on/off ratio of 300, a specific detectivity of 2.74 & times;1011 Jones, and fast response times of 360 & micro;s/610 & micro;s are obtained, together with self-powered linear polarization imaging capability. In the photoconductive mode under a bias voltage of 1 V, the device exhibits a dichroic ratio of 1.22, a high responsivity of 288 A/W, and a specific detectivity of 1.5 & times;109 Jones. This work highlights the unique advantages of tubular heterostructures in enabling multifunctional optoelectronic devices and provides a promising platform for future applications in polarization imaging, military camouflage recognition, optical communication, and optical computing.

Significance As the information society advances toward the photonic era, silicon photonics has emerged as a key enabling technology for next-generation high-performance computing and optical communication systems, owing to its unique compatibility with mature CMOS fabrication processes. The critical bottleneck in realizing large-scale, low-cost silicon-based optoelectronic integrated circuits lies in the availability of high-performance and highly reliable monolithically integrated light sources. Owing to the intrinsic indirect bandgap of silicon, the direct heterogeneous epitaxy of highly efficient III-V compound semiconductors, such as GaAs-related materials on silicon, represents a fundamentally viable solution. However, the defects such as large lattice mismatch, difference in thermal expansion coefficient and polarity mismatch seriously restrict the quality of epitaxial materials and the lifetime of devices. This article systematically reviews recent breakthroughs in this field from three perspectives: epitaxial materials, laser device innovations, and monolithic integration strategies, and discusses remaining challenges and future directions. The ultimate advantages of monolithically integrated silicon-based lasers lie in their unparalleled integration density and cost scalability. Nevertheless, their development is fundamentally limited by the triple mismatch between III-V materials and silicon substrates. Lattice mismatch leads to a high density of threading dislocations, which act as nonradiative recombination centers and severely degrade device efficiency and lifetime. Thermal expansion mismatch induces residual thermal stress and may result in crack formation, while polarity mismatch on nominally on-axis Si(001) substrates gives rise to antiphase domains (APDs). Consequently, the development of high-quality GaAs/Si virtual substrates constitutes the foundation and core of all research efforts in this field. Progress To suppress APDs, multiple approaches tailored to different epitaxial techniques have been established. For metal-organic chemical vapor deposition (MOCVD), high-temperature hydrogen annealing has proven to be an effective pretreatment for engineering silicon surface steps and suppressing APD formation. For molecular beam epitaxy (MBE), approaches based on silicon buffer layers combined with high-temperature annealing, as well as more streamlined APD self-annihilation and burial techniques, have been developed. In addition, wet chemical surface treatments that generate sub-nanometer surface stripes can guide epitaxial nucleation and effectively suppress APDs. A comprehensive comparison of these approaches in terms of material and device performance is summarized. In addition, strained superlattice dislocation filter layers and thermal cycle annealing are key technologies to reduce the through dislocation density, and their combined use can reduce the dislocation density to 10(6) cm(-2). Silicon-based lasers are mainly discussed in two categories: quantum dot (QD) lasers and quantum well (QW) lasers. For silicon-based QD lasers, their high tolerance to crystalline defects has enabled the earliest practical breakthroughs in reliability. Devices grown on GaP/Si substrates combined with advanced dislocation filtering techniques have demonstrated extrapolated lifetimes exceeding one million hours. The introduction of an asymmetric waveguide design has further enhanced the efficiency of QD lasers grown on nominally on-axis silicon substrates. Of greater industrial significance, high-performance 1. 3 mu m QD lasers fully grown by MOCVD have been demonstrated, paving the way toward scalable manufacturing. In contrast, silicon-based QW lasers had long been hindered by limited operational lifetimes. In recent years, however, they have experienced a resurgence driven by improvements in epitaxial material quality and the introduction of novel dislocation redirection and filtering structures. Continuous-wave lasing at room temperature on on-axis silicon substrates has now been achieved, and the room-temperature operational lifetime of devices grown on miscut substrates has been significantly extended to beyond 87 hours, revealing renewed potential for further development. Current research on monolithically integrated silicon-based lasers is rapidly evolving from individual device demonstrations toward system-level integration. Major directions include the monolithic integration of QD lasers and photodetectors on patterned silicon substrates, the fabrication and integration of GaAs nano-ridge lasers on 300 mm silicon wafers using CMOS-compatible processes, and the monolithic integration of QD microdisk lasers, waveguides, and photodetectors through co-epitaxial layer design, enabling compact on-chip optical interconnect building blocks. Conclusions and Prospects Despite the substantial progress achieved in materials, devices, and integration technologies for silicon-based lasers, several critical challenges must still be addressed to enable industrial deployment. From a materials perspective, new mechanisms are required to further reduce threading dislocation density in GaAs/Si to the 10(4) cm(-2) regime or below, in order to meet commercial device performance benchmarks. In terms of laser performance, quantum well lasers must continue to achieve longer operational lifetime and extend toward the O-band for optical communications, while quantum dot lasers must further optimize threshold current, output power, modulation speed, and wavelength uniformity without compromising their inherent reliability advantages. Regarding process compatibility and scalability, advancing growth fully based on MOCVD toward industrial maturity, standardizing III-V device process modules, and incorporating them into process design kits (PDKs) for the silicon photonics industry are essential steps toward cost-effective, high-yield mass manufacturing. At the system level, thermal management and design optimization require comprehensive electro-thermal-optical co-design and the development of efficient heat dissipation architectures to address the challenges associated with high-density integration. In terms of exploring new structures and principles, new laser structures such as nano-ridges, microcavities and photonic crystals are expected to improve integration density and performance, and their combination with new physics such as topological photonics may bring about disruptive breakthroughs. Through sustained, multidisciplinary, and multilevel collaborative innovation, overcoming the core bottleneck of monolithically integrated silicon-based light sources will ultimately unlock the full potential of silicon photonics, providing a revolutionary hardware platform for future information infrastructures.

A novel MUTC-PD based on self-induced field-assisted depletion is proposed. It demonstrates a 56.5 GHz 3 dB bandwidth and 33.96 dBm saturated output power at 30 GHz under -3V bias.

The extensive reliance on light energy in photocatalytic technology significantly limits its practical application. In recent years, piezocatalysis and tribocatalysis, which are driven solely by mechanical energy rather than solar energy, have emerged as research hotspots. In this study, a Bi13S18Br2/Bi2WO6 heterojunction with both triboelectric catalytic and piezoelectric catalytic properties was constructed using a pulsed oscillation strategy, and its potential as an antibacterial functional material for marine antifouling was explored. Experimental results showed that under triboelectric catalytic conditions, the Bi13S18Br2/Bi2WO6 heterojunction achieved antibacterial rates of 96.2 % against Pseudomonas aeruginosa and 94.6 % against Staphylococcus aureus. Under piezoelectric catalytic conditions, it exhibited a 100 % antibacterial rate against both bacteria. Density functional theory (DFT) calculations revealed that, in tribocatalysis, the interfacial electric field served as a prerequisite for enhancing charge carrier separation. In piezoelectric catalysis, the electric field reversal induced by periodic mechanical vibration acted as the driving force for promoting charge separation. Additionally, the enhanced structural asymmetry and dipole moment at the interface effectively improved piezoelectric catalytic performance. This study provided important insights into designing catalysts capable of efficiently harnessing mechanical energy through rational interfacial engineering, demonstrating promising application prospects in the field of marine antifouling.

The development of multifunctional optoelectronic logic gates (OELGs) with bipolar optical responses controlled by parameters such as wavelength, gate voltage, polarization, and light intensity has emerged as a key research direction in optical computing. Among these approaches, single-wavelength light-intensity modulation offers distinct advantages by enabling logic reconfiguration without additional electronic components or complex optical configurations. In this work, we integrate seven fundamental OELGs—AND, OR, NOT, NAND, NOR, XNOR, and XOR—into a single photoconductive photodetector based on a band-engineered graphene/InP heterostructure under 850 nm laser irradiation . The work-function mismatch between graphene and InP establishes a built-in electric field that directs photogenerated carrier flow across the heterointerface. As the incident light intensity increases, photogenerated carriers progressively shift the Fermi level in graphene, inducing a transition of the dominant charge carriers from holes to electrons. This light-intensity-dependent bipolar optical response enables reconfigurable logic functions. The as-fabricated device operates at an ultralow bias of 0.1 V and maintains stable logic performance across the visible-to-near-infrared (Vis–NIR) spectral range. This work presents a compact and scalable strategy for implementing all-in-one OELGs, which significantly reduces transistor count compared with conventional electronic logic devices, offering a promising route toward low-power, highly integrated optical computing chips.

Developing ZnO-based varistor ceramics with high breakdown field and large nonlinear coefficient remains a great challenge. To address this issue, a thermal-assisted cold sintering process was employed to densify ZnObased varistor ceramics at 300 degrees C and enhance their electrical properties through an annealing process at 900 degrees C. The pivotal roles of Dy2O3 in tailoring the microstructure and electrical properties have been systematically studied. It is found that doping of Dy2O3 suppresses ZnO grain growth, reducing the average grain size from 3.23 mu m to 2.21 mu m. Simultaneously, it introduces deep-level defects and increases interface state density, significantly elevating the Schottky barrier height from 1.74 eV to 3.15 eV. Specifically, the ZnO-based varistor ceramic with 0.5mol% Dy2O3 presents a high breakdown field of 990 V/mm, with a large nonlinear coefficient of 109, and an ultralow leakage current density of 0.07 mu A/cm2. This work provides an energy-efficient route for developing high-performance ZnO-based varistor ceramics.

For photocatalytic technology, the establishment of an internal electric field has garnered significant attention due to its remarkable efficacy in facilitating the separation of photogenerated charge carriers. In this study, a 3D nanoflower Bi2WO6/Bi4O5Br2 Z-type heterojunction was successfully synthesized. Notably, 11WB demonstrated excellent photocatalytic performance, achieving a 94.2% antibacterial rate against Pseudomonas aeruginosa within 30 min and a 93.5% degradation rate of Rhodamine B within 100 min. Characterization and theoretical calculations revealed that the formation of the heterojunction induced an internal electric field at the interface and adhered to the photogenerated charge carriers transfer mechanism characteristic of Z-type heterojunctions, thereby enhancing both separation and transfer efficiency of photogenerated charge carriers, significantly boosting photocatalytic activity. This work is anticipated to offer valuable insights for designing highperformance photocatalysts through the strategic construction of internal electric fields.

Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability to integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, have not yet been utilized in DmPDs. In this work, we fabricate a high-performance DmPD based on a graphene/InP Van der Waals heterostructure in a facile way, achieving a broadband response from ultraviolet-visible to near-infrared wavelengths. The device incorporates two top electrodes contacting monolayer chemical vapor deposition (CVD) graphene and a bottom electrode on the backside of an InP substrate. By flexibly switching among these three electrodes, the as-fabricated DmPD can operate in a self-powered photovoltaic mode for energy-efficient high-speed imaging or in a biased photoconductive mode for detecting weak light signals, fully demonstrating its multifunctional detection capabilities. Specifically, in the self-powered photovoltaic mode, the DmPD leverages the vertically configured Schottky junction to achieve an on/off ratio of 8 × 103, a responsivity of 49.2 mA/W, a detectivity of 4.09 × 1011 Jones, and an ultrafast response, with a rising time (τr) and falling time (τf) of 2.8/6.2 μs. In the photoconductive mode at a 1 V bias, the photogating effect enhances the responsivity to 162.5 A/W. This work advances the development of InP-based multifunctional optoelectronic devices.