Silicon-on-insulator latch designs and layouts that are robust to multiple-node charge collection are introduced. A general Monte Carlo radiative energy deposition (MRED) approach is used to identify potential single-event susceptibilities associated with different layouts prior to fabrication. MRED is also applied to bound single-event testing responses of standard and dual interlocked cell latch designs. Heavy ion single-event testing results validate new latch designs and demonstrate bounds for standard latch layouts.

We present results of radiation lot acceptance testing (RLAT) on microcircuits exposed to neutron flux prior to total ionizing dose (TID) exposure. RLAT was performed at high dose rate with anneal and low dose rate radiation levels.