We have demonstrated the fabrication of two structures achieved by the thin ifim transfer technique: back4lluminated InAlAsfInGaAs metal. semiconducthr-metal (MSM) detectors with buried interdigitated fingers on GaAs substrates; and long wavelength InGaAsP lasers on GaAs or Si substrates. For optoelectromc system applications, one often considers the use of a single material system for both the optical and electronic components on the chip, because it is not complicated by lattice mismatch. Compared to epitaxial growth of latticemismatched material systems, such as GaAs on Si, the thin ifim transfer technique does not result in a substantial number of misfit dislocations which can adversely affect device performance. The results we obtained demonstrate the feasibility of the thin film transfer process and point to the potential integration of OEICs and other components fabricated from a variety of materials on a common host substrate.

The fabrication and performance of an Al0.3Ga0.7As/GaAs modulation-doped resistive-gate charge-coupled device is reported. The two-dimensional electron gas (2DEG) CCD, implemented as a 32-stage four-phase delay line, is tested at both low (1-13 MHz) and high (0.6-1.0 GHz) frequency. It exhibits a room-temperature charge-transfer efficiency (CTE) of better than 0.999 at clock frequencies from 10 MHz up to 1 GHz without a fat-zero signal, and is limited by dark current below 10 MHz. The charge-handling capability and minimum clock swing of the resistive-gate 2DEG CCD are calculated.