This article proposes a novel technique for improving the sensitivity of extended germanium source in ferro oxide biosensors. The biosensor, referred to as Germanium extended source-vertical tunnel field effect transistor (GES-VTFET) vs silicon extended source-vertical tunnel field effect transistor (SES-VTFET) makes use of doped SiGe in the source region to enhance charge carrier mobility and gets over material solubility restrictions by adding an additional negatively biased source electrode. A finer source-channel interface and more driving current are produced in the ON state as a result of the additional source electrode's ability to pull holes from the P + source. The source region also receives an extension of the cavity under the gate electrode, which modifies the device’s electrostatic characteristics.

This research proposes a SiGe heterojunction based dopingless Vertical tunnel field effect transistor (SiGe-DV-TFET). To obtain high sensitivity for biomedical applications, a cavity is added to the gate metal side of the proposed device. Fluctuation in surface potential is caused by the immobilization of biomolecules within the cavity. Various aspects impacting the device's electrical characteristics, such as spacer length, applied voltages (Vds and Vgs), and channel material, have been investigated in this study. To validate the results, the modeling output features were compared to simulated outcomes. The surface potential of each segment is determined using Poisson's equation in one and two dimensions, respectively. In the Silvaco ATLAS tool, multiple outcomes of charge density and dielectric constant are employed to recreate biomolecules for simulation.

Entire world is passing through the corona virus disease (COVID-19) outbreak badly. According to the WHO, corona virus affects respiratory system. This corona virus majorly spreads when someone comes in contact with an infected person and respiratory droplets that generates by coughing or sneezing play major role in spreading the infection. These respiratory droplets can spread infection when inhaled by someone or contaminate hands and surfaces in contact. During the treatment of such infectious disease, the safety of healthcare workers becomes the matter of primary concern as they are directly involved during the process of diagnosis as well as treatment and care of COVID‐19 patients; hence, they are always open to infection, and their chances of getting infected with SARS‐CoV‐2 virus become very high. A lot of challenges hospitals and staff are facing, and few of them need to be addressed technologically. In present work, in this paper, we have proposed a Bluetooth and IOT-based wireless healthcare monitoring system. The proposed system can be utilized to get real-time online physiological conditions of a patient. Doctors can monitor their COVID-19 patients remotely. A robotic trolley could be pressed into service (serve or fulfill the patient need) in hospital in order to remove direct connection and minimize the risk of spreading infection between healthcare workers who are directly involved in treating COVID-19 patients. This system continuously monitors the real-time temperature and pulse rate of the patient and send data remotely to the doctors. A medicine reminder system also reminds the patient about the medicine with date and time through voice system.

In this work, a triple metal gate -ferroelectric material -with SiGe heterojunction based vertical structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and investigated. It also demonstrated the effect of ferroelectric gate oxide material gate stack with high-K dielectric constant on heterojunction vertical TFET structure. The ratio of body capacitance to oxide capacitance will be reduced if negative capacitance is added to the gate oxide series such as ferroelectric material. Three of the engineering methods opted for optimized the device ON and OFF current and its ratio. Shape engineering, Heterojunction engineering and device work function opted during the analysis of the proposed devices. Four of the devices designed TMG-VTFET, TMG-FE-VTFET, TMG-SiGe-VTFET and TMG-FE-SiGe-VTFET device designs with and without ferroelectric oxide material and SiGe layer at source-channel interface are evaluated using various simulation characteristics in order to validate and optimize the results. Electrical characteristics performance simulated and compared for analysis of energy band diagram, electron/hole carrier concentration, electric field, BTBT rate (electron and hole), e-mobility, h-mobility, Electron/Hole QFL (quasi-fermi-level), Id vs Vgs, Id vs Vds, surface potential, transconductance of all proposed configurations. The used work function optimized at 4.15 eV, 4.35 eV, 4.15 eV for ϕ m1 , ϕ m2 and ϕ m3 respectively. The highest I ON current (1.28 × 10 −4 A/μm) and minimum I OFF current (7.59 × 10 −18 A/μm) is recorded for the TMG-FE-SiGe-VTFET structure respectively. TMG-FE-SiGe-VTFET holds the maximum I ON /I OFF current ratio of 10 ~ 13 and the lowest SS of 9.97 mV/decade among all other configurations. Finally, this work found suitable and helpful for analyzing low power application with improved performance.

In this paper, a 2D analytical potential model for n + SiGe Gate stacked linearly graded work function Vertical TFET (n + SiGe GS-LGW-VTFET) is developed with incorporating the effect of source and drain depletion region towards the channel. The proposed novel structure is developed from linearly graded for equalizing disruption of the work function having symmetric potential distribution effect on the device channel, which noticeably improve the device performance by reducing the short channel effect. The Poisson equation is solved in terms of channel surface potential and electric field using the parabolic approximation approach. This model also used some accurate analysis by employing the SiO2 and HfO2 with gate stacking method in order to increase the better gate control over the channel length. This model can initially forecast with the effect of gate-source voltage (Vgs) and drain-source voltage (Vds) thereafter gate oxide thickness, linearly graded work function, and SiGe mole fraction. The electric field is derived using the surface potential model, and thereafter, in order to extract the drain current characteristics, our suggested model accounts for the variables of the Kane model by integrating the band-to-band tunneling generation rate over the tunneling region. The proposed model efficiency has been confirmed by the drive characteristics of our model are in coincides nicely with that of simulation results.

The occurrence and distribution of soils in nature varies from location to location. The type of soil depends on the rock type, its mineral constituents and the climatic regime of the area. Soils are used as construction materials or the civil engineering structures are founded in or on the surface of the earth. Geotechnical properties of soils influence the stability of civil engineering structures. Most of the geotechnical properties of soils influence to each other. In this paper, different geotechnical properties of soils such as specific gravity, density index, consistency limits, particle size analysis, compaction, consolidation, permeability and shear strength and their interactions and applications for the purpose of civil engineering structures have been discussed.

This paper presents a multi-objective control strategy for power quality issues. With increasing applications of nonlinear and semi-conductor devices in distribution systems and industries, power-quality (PQ) problems, such as harmonics, neutral current elimination, voltage sag, voltage swell reactive power has become an unavoidable issue. Due to the changing trends and restructuring of power systems, the consumers are looking forward to the quality and reliability of power supply at the load centers. The aim therefore, in this work, is to identify the prominent concerns in the area and thereby to recommend measures that can enhance the quality of the power, keeping in mind their economic reliability and technical consequences. The Unified power quality conditioner (UPQC) is an effective custom power device for the enhancement of power quality due to its quick response, high reliability and nominal cost.

As a result of increasing demand of electricity, one way of generating renewable energy sources is from wind turbines. The places across the world where velocity of wind is conducive for power generation, the wind turbines influence the behavior of power system. In this paper, a wind turbine connected with DFIG for Wind Energy Conversion using sherbius drive with vector control is modeled, in the power system simulation tool, PSCAD/EMTDC and outputs are simulated to investigate the presence of flicker at the point of common coupling. The impact of wind speed variation on the voltage & current waveforms is investigated so as to assess the Power Quality. The vector control method is implemented to ensure decoupled control of active and reactive powers while ensuring the maximum energy capture from the wind. It is concluded that wind speed variation results in predominant flicker during transient period, however the DFIG model is capable of suppressing the same. Efforts can still be made to mitigate the flicker by flicker control scheme so as to improve the Power Quality of associated Networks in National Endeavour.