The problem of ensuring the operational parameters of composite multilayer semiconductor nanoscale structures at the design technology stages is solved. A mathematical model based on the physics of processes occurring in the structure during operation is developed. The problem is solved for the resonant-tunnelling AlGaAs nanoheterostructures.

evkjmo@gmail.com Abstract. The resonant tunneling diode (RTD), due to the possibility of targeted synthesis of the current-voltage characteristic, is one of the most attractive non-linear elements of signal converters. To realize the advantages of the RTD, a model of its current-voltage characteristic (CVC) is needed, however, the existing models do not allow for a physical and mathematical interpretation of the relationships between the CVC parameters and the RTD design, which makes it impossible to analyze the objective functions and, as a result, the choice of optimization method. Hence, the problem of studying objective functions arises, which makes the choice of the optimization method unreasonable. To solve this problem, a compact analytical model of current transfer has been developed, the distinguishing features of which are the allowance for interelectronic interaction and the absence of undetermined empirical correction factors. Estimates of the electron density in the quantum well of the RTD heterostructural channel and the self-consistent correction to resonant levels are obtained. The developed model makes it possible to obtain estimates comparable in accuracy with estimates of distributed models over the entire area of the positive differential resistance of CVC with a relative error for AlGaAs structures not exceeding 1%, which meets the requirements of the design problems of modern radio electronic devices, in particular, devices for converting the frequency of radio signals for receiving -transmitting systems for various purposes. Thus, the presented compact model is promising for integration into RTD-based device design systems.

A solution to the problem of design and technological optimization (DTO) of resonant-tunneling diodes (RTDs) based on the electrical parameters of nonlinear frequency converters (FCs) is proposed to ensure their reliability in given operating conditions. A software package has been developed that makes it possible to perform an analysis of the reliability of FC microwave radio signals based on RTDs and to carry out DTO of the electrical characteristics of the FC in order to ensure reliability under specified operating conditions The developed software complex is tested on a wideband RTD-based balanced microwave frequency mixer. It was revealed that performing DTO on the mentioned mixer allows us to increase its gamma-percentage resource by 7.5 times, which proves that DTO is a perspective way to ensure RTD-based FC reliability.

The solution of the resonant-tunneling diode-based subharmonic microwave radio signals mixer's reliability in given operating conditions are presented. The goal was achieved by design and technological optimization of the device's electrical parameters. The optimal combination of the mixer's electrical parameters was determined by a software suite developed by the authors. The gamma-percentage resource was increased by 1.49 times after optimization.

Research of multiferroid materials was conducted for the purpose of their possible use in industrial production for radio-electronic information devices [1]. It is shown that ordered structures based on silica microspheres with embedded magnetic nanoparticles represent one of the most interesting options for implementing multiferroid materials in the form of a 3D lattice of nanoclusters of crystalline multiferroics (iron, manganese and cobalt titanates of the FeTi205, FeTiO3 type), the results of which are presented in the materials of the article [2]. The possibility of the existence of a negative real part of the magnetic permeability of such materials under magnetic resonance conditions is not in doubt. Experiments conducted by a group of authors have shown that external fields can significantly change the characteristics of this class of nanomaterials [3]-[5] and allow them to be used in promising REA developments. Synthesis of multiferroic and multiferroic materials based on previously developed technologies to produce high-quality lattice packings of nanospheres of silica structure of opal SiT2 [6], and study of electromagnetic, dielectric, optical, magnetic and other properties of such materials is of great importance due to the prospects of their application, for example, allowed to find out the conditions under which this class of multiferroic media can be used in the creation of an effective electronic information devices that control electromagnetic fields.

The research object is a resonant-tunneling diode based broadband radio signals mixer (RTD BM) of 4-8 GHz range. The purpose of this research is to perform statistical analysis of the RTD BM design parameters’ technological variation impact on its electrical characteristics’ variation. RTD BM’s electrical characteristics variations under the impact of its nonlinear elements’ I-V characteristics, topology parameters and substrate thickness, and relative permittivity technological errors, as well as under their combined impact, were obtained. The ranking of the considered RTD BM’s parameters technological variations’ contribution to its electrical characteristics’ distributions was carried out. It was revealed that the biggest contribution to RTD BM’s electrical characteristics’ distribution is made by the technical errors of its nonlinear elements’ I-V characteristics. RTD BM’s electrical characteristics distributions under all design parameters’ technological errors combined influence can be used in RTD BMs’ batch reliability analysis performed by computer statistical experiment means.

Abstract The purpose of this study is to analyze the impact of high temperature and gamma-irradiation on the electrical characteristics of the balanced SHF mixer based on the resonant-tunnelling diodes during its operation. Failures caused by irreversible changes in the nonlinear element’s electrical characteristics under the mentioned operational factors’ effect investigated. Revealed that the failure is caused by the mixer’s combination frequency 1-1 conversion loss’ growth. Individual times to failure, matching the mixer’s actual operating conditions, were obtained.

Abstract Resonant-tunneling diodes (RTD) are prospective EHF and UHF electronics elements. Using RTDs as radio frequency converter’s nonlinear element would allow to improve converter’s performance indices and extend its frequency range up to THz. The purpose of research is investigating kinetics of the RTD’s I-V curve under given operating conditions, such as high temperature and ionizing radiation’s influence. For this case, special mathematical models are submitted. These models describe RTD I-V curves’s degradation under high temperature and ionizing radiation’s influence. Basing on described models a program package allowing to simulated RTD I-V curves’s kinetics under listed factors’ influence was developed. Results’ adequacy is verified by comparison with experimental data.

The main causes of the passive tag for manufacturing automation Radio Frequency Identification System (RFID) parametric failures by the criterion of the minimum range are considered. A mathematical model that allows estimating the yield of passive tags and the reliability during the assigned lifetime by the specified criterion has been developed.

In order to solve the problem of ensuring the required level of reliability of modern radio electronic systems for space, aviation and special purposes on the basis of ultra-high-speed heterostructure nanoelectronics devices, methodology was elaborated aimed at design, development and technological optimization of such devices. It is proposed to use a special efficiency preservation coefficient as the target function, which makes it possible to take into account parametric alterations within the assigned operational tolerance and is characterized by practice-oriented advantages in comparison with the so-called integral probability of performing the given functions. The problem of reduced accuracy in forecasting electrical properties of semiconductor structures in nanoelectronics devices with a low dimensional channel is solved. A gerontological physical and mathematical model for AlGaAs-heterostructure nanoelectronics devices with transverse transport was developed, which made it possible to solve the problem of limited applicability of the methods established by the classical statistical theory of reliability to ensure increased requirements to durability of such devices in electronic systems for space purposes operating in severe conditions and operating modes.

In this paper, a computational algorithm has been developed for the quantum-mechanical model for predicting the electrical properties of 2-d semiconductor structures of nanoelectronics devices with a low-dimensional channel. The most important advantage of the developed algorithm is its scalability for the problems of technological optimization of nanoelectronics devices. An example of application of the developed software to solving the problem of predicting the electrical properties of a low barrier detector sub-terahertz diode with zero-bias in the framework of solving the problem of its technological optimization is presented.

Abstract A model of degradation of AlGaAs-heterostructures has been developed. Parasitic resistance growth and diffusion of aluminum and donor impurities are considered as the main reasons of degradation of the structure. Current transfer models are generalized to the case of structures with continuous impurity distribution profiles. Algorithms based on numerical methods with reduced time complexity have been developed. RTS CVC was calculated before and after the annealing operation in order to verify the models. According to the results of the calculation, it was concluded that the developed algorithms are advisable for reliability prediction applications.

The object of research is a resonance-tunneling diode (RTD) based on multilayer AlGaAs heterostructures. A software complex with high-speed algorithm modeling the RTD current-voltage (I-V) characteristic’s initial section with the possibility of carrying out a computer statistical experiment for studying the effect of technological errors of the diode design parameters on its I-V characteristic is submitted; the results of such study are shown

In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact resistance on time and temperature was determined.

Обсуждается применение резонансно-туннельного диода (РТД) в качестве нелинейного элемента преобразователей СВЧ радиосигналов. Приводятся результаты исследований деградации РТД в процессе эксплуатации. Определяются коэффициенты диффузии Al в резонансно-туннельной структуре и Si в приконтактных областях РТД. Предлагаются структура диагностической модели РТД и методика построения прогноза надежности РТД и нелинейных преобразователей СВЧ радиосигналов на его основе.

The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts’ degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

Using a resonant-tunneling diode (RTD) as a nonlinear element of microwave signal converters is discussed. The research results of degradation of RTDs during the operation are given. The diffusion coefficients of Al in a resonant-tunneling structure (RTS) and of Si in near-contact zones of the RTD are determined. The structure of a diagnostic model of an RTD and the methodology of creating a reliability prediction of RTDs and nonlinear converters of microwave radio signals based on them are proposed.

In the current work, the problem of UHF RFID passive tag sensitivity increase is considered. Tag sensitivity depends on HF signal rectifier efficiency and antenna-rectifier impedance matching. Possibility of RFID passive tag sensitivity increase up to 10 times by means of RTD use in HF signal rectifier in comparison with tags based on Schottky barrier diode is shown.

A technique for assessing the quality of AlAs/GaAs nanoscale resonant-tunneling heterostructures from the viewpoint of their resistance to diffusion destruction is developed. The diffusive spreading of AlAs/GaAs heterostructure layers is revealed by infrared (IR) spectral ellipsometry and the Al and Si diffusion coefficients in GaAs are determined.