Flexible spintronics has recently sparked an upsurge due to the growing demand for miniaturization, high-speed, integration and energy-saving in portable and wearable devices. However, the stress/strain during the substrate deformation process is inevitable for flexible spintronic devices and may be available to assist the switching of the magnetization, accordingly. Therefore, combined with the previously discovered high energy efficient sunlight controlled magnetization switching, we propose a bending-insensitive photo-voltaic flexible spintronic device constructed by PET/Ta/Permalloy/(PC71BM: PTB7-Th)/Pt heterostructure. The bent device achieved a 281 Oe of maximal ferromagnetic resonance (FMR) field shift by photoelectrons in a reversible manner under the sunlight soaking at room temperature. And the magnetic change as a function of the external light radiation was precisely determined. These findings provide a feasible way to combine the flexible substrate and photoelectrons for energy-saving and precise manipulation of magnetism in bendable spintronic devices. (C) 2022 Elsevier B.V. All rights reserved.

In this paper, a photovoltaic AMR sensor (PET/Ta (3 nm)/NiFe (d nm)/ PTB7-Th:PC71BM (80 nm)/Pt (3 nm)) is investigated. The device achieved maximal 364 Oe ferromagnetic resonance field shift and 402 Oe magnetic anisotropy field change under simulated sunlight. Significantly, the sensor achieved a 3-4 Ω magnetoresistance increase and a 36.8 % AMR ratio rise by sunlight illumination. And the increase of NiFe thin film thickness decreased the variation of AMR ratio. Excellent reversibility and reproducibility have also been exhibited. The doped photoelectrons can decrease the magnetic moment of NiFe and enhance the magnetoresistance by occupying 3d orbitals. The results demonstrate a promising application possibility in AMR sensors for photovoltaic spintronic devices in the future.

Quick charge/discharge polymer‐based composites filled with inorganic nanosheets have attracted extensive attention and provided a more efficient way to achieve high energy storage density (U) because of the alleviated agglomeration of fillers and the formation of conduction barriers. However, conductive paths have a chance to extend along out‐of‐plane directions by circumventing the micrometer‐sized nanosheets. Here, large‐sized (111)‐oriented BaTiO3 (BTO) films with outstanding epitaxiality and ferroelectricity are embedded in poly(vinylidene fluoride) (PVDF) using optimal transfer and hot‐pressing processes. The 2D–2D (2–2) type BTO/PVDF composites interlayered by 2‐layer BTO (about 0.2 µm thick of each layer) exhibit the highest U of 20.7 J cm‐3 at 690 MV m‐1, which is 222.6% that of pure PVDF. Phase‐field simulations reveal that high‐resistance PVDF films as outer layers can prevent the charges injection from electrodes and high‐dielectric BTO films as inner layers can effectively suppress the mobile charges across interfaces between layers, leading to a remarkable improvement of breakdown strength. This work puts forward a scalable approach to enhance the U of inorganic/organic composites for advanced energy storage materials and applications.

The inexorable trend of spintronics is to develop efficient spin‐control methods. For example, photovoltaic spintronics driven by sunlight has great potential in energy‐saving applications. Here, a ferromagnetic/PV heterojunction is prepared on Si‐substrate as Ta (4 nm)/Co (1 nm)/ZnO (from 10 to 58 nm)/PTB7‐Th: PC 71 BM/Pt (3 nm) to study how visible light affected magnetic dynamics. A linewidth variation as high as 812.55 Oe is achieved by optimizing the thickness of ZnO film used to enhance the electron transfer. Due to the photovoltaic effect, reversible ferromagnetic resonance (FMR) linewidth switches are displayed, which is attributed to the 3d orbitals occupancy of Co induced the TMS contribution and inhomogeneous broadening. This work proposes a sunlight controllable magnetic damping heterostructure for developing fast, small, energy‐efficient spintronics applications.

The synthetic antiferromagnets (SAFs) with inserted heavy metal tantalum (Ta) are attracting an increasing interest due to the relatively large spin Hall angles, resulting in a much lower driven current for low‐power consumption, and the conduciveness to high magnetoresistance, showing more suitability for an application. Here, stable and reversible switching behavior is experimentally realized between antiferromagnetic (AFM) coupling and ferromagnetic (FM) coupling in Co 40 Fe 40 B 20 /Ta/Co 40 Fe 40 B 20 /(011) Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 (PMN‐PT) multiferroic heterostructures after applying an external voltage, proved by vibrating sample magnetometer (VSM) and ferromagnetic resonance (FMR) measurements. The indirect interaction shows no periodical oscillation with the layer thicknesses variation of FM layer or nonmagnetic (NM) layer experimentally, which is consistent with the previous reports in theoretical calculation. This work is instructive and guiding for a better understanding of SAFs and realizing the next generation of AFM spintronic devices.

Energy Storage Density In article number 2108496, Ming Liu and co-workers successfully synthesize 2-2 type PVDF-based composites interlayered by epitaxial (111)-oriented BTO films, which exhibit a high energy storage density. Phase-field simulations reveal that PVDF films as outer layers prevent the charge injection from electrodes and BTO films as inner layers suppress the mobile charges across interfaces between layers. The composites could be an excellent candidate for future energy storage applications.