InAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and the non-uniform size distribution deteriorates the device performance based on multi-stacked QD layers. In this study, In-flush was incorporated during the epitaxy, and the photoluminescence (PL) linewidth was significantly narrowed to 26.1 meV for the flushed sample and maintained to 27.3 meV for the unflushed sample. The flushed sample shows better device performance in threshold current (0.229 to 0.334 A at 15 °C), power (1.142 to 1.113 W at 15 °C), and characteristic temperature (51 to 39 K in the range of 55~80 °C) compared with the unflushed sample.

We present a extended short-wave infrared photodetector featuring a p-doped InGaAs/GaAsSb type-II superlattices (T2SL) absorber encapsulated by a pair of electron-blocking and hole-blocking barriers. Each barrier uses different InGaAs/GaAsSb T2SL design lattice matched to InP substrate. The single element device exhibits 100% cut off wavelength of 2.32 mu m at 300 K. It achieves saturated QE values of 50.7% at 1.6 mu m under front-side illumination without any anti-reflection coating. At 300 K, the photodetector exhibits a dark current density of 5.38 x 10(-3) A/cm(2) under -20 mV applied bias, providing a specific detectivity of 8.18 x 10(9) Jones. Clear infrared imaging using f/2 optics and an integration time of 12 ms was obtained at 300 K by a 640 x 512 focal plane array using the same structure design.

We present a broadband enhanced single photon source device of Gaussian-shaped GaAs microlens (ML) arrays coupled with a gold bottom mirror hybrid structure. The extrapolated light extraction efficiency of (60.6 ± 1.5)% at maximum (for collection numerical aperture = 0.45 and based on the an actually measured raw detection efficiency of ∼0.775%) and a broad spectral band of 890–960 nm were obtained. The ML-Au structure with embedded epitaxial quantum dots exhibits a high single-photon purity of (96.6 ± 0.7)% [g(2)(0) = 0.034 ± 0.003] under pulsed excitation with 20% saturation. Wet-etched microlenses with smooth surfaces achieve simultaneous enhancement of both XX and X exciton emissions, which is prerequisite for promising entangled photon pair generation. This work proposes the bright potential of integrated hybrid structures to enable further photon pair entanglement applications.

Laser light possesses perfect coherence, but cannot be attenuated to single photons via linear optics. An elegant route to convert laser light into single photons is based on photon blockade in a cavity with a single atom in the strong coupling regime. However, the single-photon purity achieved by this method remains relatively low. Here we propose an interference-based approach where laser light can be transformed into single photons by destructively interfering with a weak but super-bunched incoherent field emitted from a cavity coupling to a single quantum emitter. We demonstrate this idea by measuring the reflected light of a laser field which drives a double-sided optical microcavity containing a single artificial atom-quantum dot (QD) in the Purcell regime. The reflected light consists of a superposition of the driving field with the cavity output field. We achieve the second-order autocorrelation g2(0)=0.030+-0.002 and the two-photon interference visibility 94.3%+-0.2. By separating the coherent and incoherent fields in the reflected light, we observe that the incoherent field from the cavity exhibits super-bunching with g2(0)=41+-2 while the coherent field remains Poissonian statistics. By controlling the relative amplitude of coherent and incoherent fields, we verify that photon statistics of reflected light is tuneable from perfect anti-bunching to super-bunching in agreement with our predictions. Our results demonstrate photon statistics of light as a quantum interference phenomenon that a single QD can scatter two photons simultaneously at low driving fields in contrast to the common picture that a single two-level quantum emitter can only scatter (or absorb and emit) single photons. This work opens the door to tailoring photon statistics of laser light via cavity or waveguide quantum electrodynamics and interference.

The realization of efficient quantum light sources relies on the integration of self-assembled quantum dots (QDs) into photonic nanostructures with high spatial positioning accuracy. In this work, we present a comprehensive investigation of the QD position accuracy, obtained using two marker-based QD positioning techniques, photoluminescence (PL) and cathodoluminescence (CL) imaging, as well as using a marker-free in-situ electron beam lithography (in-situ EBL) technique. We employ four PL imaging configurations with three different image processing approaches and compare them with CL imaging. We fabricate circular mesa structures based on the obtained QD coordinates from both PL and CL image processing to evaluate the final positioning accuracy. This yields final position offset of the QD relative to the mesa center of $\mu_x$ = (-40$\pm$58) nm and $\mu_y$ = (-39$\pm$85) nm with PL imaging and $\mu_x$ = (-39$\pm$30) nm and $\mu_y$ = (25$\pm$77) nm with CL imaging, which are comparable to the offset $\mu_x$ = (20$\pm$40) nm and $\mu_y$ = (-14$\pm$39) nm obtained using the in-situ EBL method. We discuss the possible causes of the observed offsets, which are significantly larger than the QD localization uncertainty obtained from simply imaging the QD light emission from an unstructured wafer. Our study highlights the influences of the image processing technique and the subsequent fabrication process on the final positioning accuracy for a QD placed inside a photonic nanostructure.

High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga-0.51 As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of similar to 2.1 mu m and similar to 2.6 mu m, respectively. At a bias voltage of -100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 mu m, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12 x 10(10 )cmHz(1/2)/W (at a peak responsivity of 2.1 mu m) under -100 mV applied bias at 300 K.

A bias-selectable near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band bandgap engineered Ga 0.51 As 0.49 Sb/Al 0.85 Ga 0.15 AsSb/T2SL (In 0.53 Ga 0.47 As/Ga 0.51 As 0.49 Sb) infrared photodetector, vertically stacked in a monolithic grown on InP substrate, is demonstrated. GaAsSb NIR sub-detector and T2SL eSWIR sub-detector are operated under small forward and reverse bias, respectively. The GaAsSb sub-detector functions within the NIR spectrum, with a 100% cutoff wavelength of 1.72 μm at 50 mV, achieving a peak responsivity of 0.560 A/W at 1.55 μm and a specific detectivity (D*) of 1.48 ×10 11 cm⋅Hz 1/2 /W. At -250 mV, the T2SL eSWIR sub-detector functions in the eSWIR band, exhibiting a 100% cutoff wavelength of 2.6 μm. The peak responsivity is 0.273 A/W at 2.0 μm, with a specific detectivity of 6.11 ×10 9 cm⋅Hz 1/2 /W. The present work demonstrates the potential of the dual-band photodetector for multispectral SWIR applications.

InAlAs:Be/InGaAs superlattices grown at low temperatures were investigated in this study. To obtain the highest resistivity and mobility simultaneously, a growth temperature above 200 °C was applied. The electrical properties were conducted via Hall effect measurement and a photoresponse test. The experimental results demonstrate that the sample grown at 257.5~260 °C exhibits the highest resistivity (1290 Ω × cm) and lowest carrier concentration (3.18 × 1014 cm−3), along with the highest mobility (187.2 cm2/Vs). Furthermore, the highest photoresponse (1.21) relative to dark resistivity was obtained under 1500 nm excitation. The optimized growth parameter of InGaAs/InAlAs multilayered structures is of great significance for fabricating high-performance terahertz photoconductive semiconductor antennas.

The emerging hybrid integrated quantum photonics combines the advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing. Despite the tremendous progress in hybrid integrations of III-V quantum emitters with silicon-based photonic circuits and superconducting single-photon detectors, on-chip optical excitations of quantum emitters via miniaturized lasers towards single-photon sources (SPSs) with low power consumptions, small device footprints, and excellent coherence properties is highly desirable yet illusive. In this work, we present realizations of bright semiconductor SPSs heterogeneously integrated with on-chip electrically-injected microlasers. Different from previous one-by-one transfer printing technique implemented in hybrid quantum dot (QD) photonic devices, multiple deterministically coupled QD-circular Bragg Grating (CBG) SPSs were integrated with electrically-injected micropillar lasers at one time via a potentially scalable transfer printing process assisted by the wide-field photoluminescence (PL) imaging technique. Optically pumped by electrically-injected microlasers, pure single photons are generated with a high-brightness of a count rate of 3.8 M/s and an extraction efficiency of 25.44%. Such a high-brightness is due to the enhancement by the cavity mode of the CBG, which is confirmed by a Purcell factor of 2.5. Our work provides a powerful tool for advancing hybrid integrated quantum photonics in general and boosts the developments for realizing highly-compact, energy-efficient and coherent SPSs in particular.

We report on a GaSb-based superluminescent diode optimized for high-power broadband operation around a wavelength of 2 μm. The high optical power was achieved by the high-quality epitaxial InGaSb/AlGaAsSb type-I quantum well gain material, which was processed into a double-pass amplification configuration. To prevent lasing at high current injection while enabling strong amplified spontaneous emission, a cascade cavity suppression waveguide geometry was designed to connect the vertical rear facet with the reflectivity-suppressed angled front facet. A Ta2O5/SiO2 ultra-low antireflection coating with a minimum reflectivity of 0.04% was applied to the front facet for further cavity suppression. This combination allowed the superluminescent diodes to demonstrate a record high single-transverse-mode output power of up to 152 mW under continuous-wave operation at room temperature, with a broad spectral band of 42 nm full width at half maximum. A 25% promotion in optical power has been realized compared to current state-of-the-art devices in this wavelength range, without sacrificing spectral bandwidth. The high-power spectral density characteristics, along with a good beam quality, are well suited for absorption spectroscopy applications and hybrid integration with silicon technology.

This study investigates the performance of infrared photodetectors through variable temperature tests, specifically examining dark current, light current, and capacitance. The reduction of dark current and the increase in carrier lifetimes are crucial for enabling the utilization of infrared photodetectors in complex environments. By conducting tests and analyses on high-performance detectors, the physical mechanisms governing carrier transport processes can be obtained. In order to elucidate the characteristics of InAs/GaSb/AlSb type-II superlattices, a short-wave infrared (SWIR) photodetector exhibiting low dark current and low saturation bias voltage is designed and fabricated.

We propose a novel graded AlGaAsSb layer growth method to achieve a super-linear interface by precisely controlling the cell temperature and valve position. Atomically smooth surface and lattice-matched epitaxy was confirmed by AFM and the HRXRD characterization of the graded AlGaAsSb layer sample. With the inserted graded layer between the cladding and waveguide layers, high-power, high-efficiency GaSb-based laser emitters and laser bars were confirmed. The linearly graded interface layer smooths the potential barrier peak between the cladding and waveguide layers, which resulted in a low turn-on voltage of 0.65 V and an ultra-low series resistance of 0.144 Ω. A maximum continuous-wave output power of 1.8 W was obtained with a high power conversion efficiency of 28% at 1.1 A and 12% at 8 A. A facet-coated laser bar was also fabricated with a record-high CW output power of 18 W. A high internal quantum efficiency of 83 was maintained at 40 °C, implying improved carrier injection efficiency, which benefits from the built-in electric field of the composition-graded AlGaAsSb layer.

Here we report 1.3 μm electrical injection lasers based on InAs/GaAs quantum dots (QDs) grown on a GaAs substrate, which can steadily work at 110 °C without visible degradation. The QD structure is designed by applying the Stranski–Krastanow growth mode in solid source molecular beam epitaxy. The density of InAs QDs in the active region is increased from 3.8 × 1010 cm−2 to 5.9 × 1010 cm−2. As regards laser performance, the maximum output power of devices with low-density QDs as the active region is 65 mW at room temperature, and that of devices with the high-density QDs is 103 mW. Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110 °C.

In this work, we developed pre-grown annealing to form β2 reconstruction sites among β or α (2 × 4) reconstruction phase to promote nucleation for high-density, size/wafer-uniform, photoluminescence (PL)-optimal InAs quantum dot (QD) growth on a large GaAs wafer. Using this, the QD density reached 580 (860) μm−2 at a room-temperature (T) spectral FWHM of 34 (41) meV at the wafer center (and surrounding) (high-rate low-T growth). The smallest FWHM reached 23.6 (24.9) meV at a density of 190 (260) μm−2 (low-rate high-T). The mediate rate formed uniform QDs in the traditional β phase, at a density of 320 (400) μm−2 and a spectral FWHM of 28 (34) meV, while size-diverse QDs formed in β2 at a spectral FWHM of 92 (68) meV and a density of 370 (440) μm−2. From atomic-force-microscope QD height distribution and T-dependent PL spectroscopy, it is found that compared to the dense QDs grown in β phase (mediate rate, 320 μm−2) with the most large dots (240 μm−2), the dense QDs grown in β2 phase (580 μm−2) show many small dots with inter-dot coupling in favor of unsaturated filling and high injection to large dots for PL. The controllable annealing (T, duration) forms β2 or β2-mixed α or β phase in favor of a wafer-uniform dot island and the faster T change enables optimal T for QD growth.

Chiral light-matter interactions supported by topological edge modes at the interface of valley photonic crystals provide a robust method to implement the unidirectional spin transfer. The valley topological photonic crystals possess a pair of counterpropagating edge modes. The edge modes are robust against the sharp bend of 60° and 120°, which can form a resonator with whispering gallery modes. Here, we demonstrate the asymmetric emission of chiral coupling from single quantum dots in a topological resonator by tuning the coupling between a quantum emitter and a resonator mode. Under a magnetic field in Faraday configuration, the exciton state from a single quantum dot splits into two exciton spin states with opposite circularly polarized emissions due to the Zeeman effect. Two branches of the quantum dot emissions couple to a resonator mode in different degrees, resulting in an asymmetric chiral emission. Without the demanding of site-control of quantum emitters for chiral quantum optics, an extra degree of freedom to tune the chiral contrast with a topological resonator could be useful for the development of on-chip integrated photonic circuits.

In this work, we measure polarization-resolved photoluminescence spectra from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) at the telecom O-band with strain-coupled bilayer structure. QDs often show fine-structure splitting (FSS) ~100 μeV in uniform anisotropy and valence-band mixing of heavy holes (HH) and light holes (LH); the biaxial strain also induces LH excitons with small FSS (especially XX, <5 μeV, 70% of QDs); delocalized LH reduces the Coulomb interaction between holes Vhh and enhances population on LH excitons XX, XX11, X11+ and XX21+.

The coherent interaction of electromagnetic fields with solid-state two-level systems can yield deterministic quantum light sources for photonic quantum technologies. To date, the performance of semiconductor single-photon sources based on three-level systems is limited mainly due to a lack of high photon indistinguishability. Here we tailor the cavity-enhanced spontaneous emission from a ladder-type three-level system in a single epitaxial quantum dot through stimulated emission. After populating the biexciton (XX) of the quantum dot through two-photon resonant excitation, we use another laser pulse to selectively depopulate the XX state into an exciton (X) state with a predefined polarization. The stimulated XX-X emission modifies the X decay dynamics and improves the characteristics of a polarized single-photon source, such as a source brightness of 0.030(2), a single-photon purity of 0.998(1) and an indistinguishability of 0.926(4). Our method can be readily applied to existing quantum dot single-photon sources and expands the capabilities of three-level systems for advanced quantum photonic functionalities.

GaSb-based single-transverse-mode narrow ridge waveguide (RW) lasers with high power and simultaneous good beam quality have broad application prospects in the mid-infrared wavelength region. Yet its design and formation have not been investigated systematically, while the beam characteristics that affect their suitability for specific applications remain rarely analyzed and optimized. The present work addresses these issues by theoretically establishing a waveguide parameter domain that generalizes the overall possible combinations of ridge widths and etch depths that support single-transverse-mode operation for GaSb-based RW lasers. These results are applied to develop two distinct and representative waveguide designs derived from two proposed major optimization routes of model gain expansion and index-guiding enhancement. The designs were evaluated experimentally based on prototype 1-mm cavity-length RW lasers in the 1950 nm wavelength range, which were fabricated with waveguides having perpendicular ridge and smooth side-walls realized through optimized dry etching conditions. The model gain expanded RW laser design with a relatively shallow-etched (i.e., 1.55 m) and wide ridge (i.e., 7 m) yielded the highest single-transverse-mode power to date of 258 mW with a narrow lateral divergence angle of 11.1 ^∘ full width at half maximum at 800 mA under room-temperature continuous-wave operation, which offers promising prospects in pumping and coupling applications. Meanwhile, the index-guiding enhanced RW laser design with a relatively deeply etched (i.e., 2.05 m) and narrow ridge (i.e., 4 m) provided a highly stable and nearly astigmatism-free fundamental mode emission with an excellent beam quality of M ^2 factor around 1.5 over the entire operating current range, which is preferable for seeding external cavity applications and complex optical systems.

近年来,量子科技研究得到迅猛发展,我国量子信息技术不断取得重大进展.量子技术进一步发展必然需要高性能可实用的固态量子器件,关键器件技术之一是具有高确定性和高品质的单光子量子光源.我国在量子通信技术研究方面走在世界前列,目前实现的量子秘钥分发技术采用诱骗态编码传递量子秘钥,该方案采用激光衰减产生的单光子并非纯净单光子.