<p>Supplementary Table 1. Relative miRIP isolation of miRNAs predicted by TargetScan in HepG2 and PC-3 cells.</p>

Background: The present study was aimed to explore the effects and the underlying mechanism of prophylactic low-molecular-weight heparin (LMWH) treatment on taurocholate-induced severe acute pancreatitis (SAP) in a rat model. Methods: Rat SAP model was induced by injection of 4% sodium taurocholate into the pancreatic duct. LMWH was applied half an hour before the induction of pancreatitis at the dose of 200 IU/kg subcutaneous injection. The rats were euthanized at 1 h, 6 h, and 12 h after taurocholate-induced SAP. The inflammatory and oxidative response markers were assessed. And the vascular endothelial growth factor (VEGF) and Fms-related tyrosine kinase 1 (Flt-1) expression were evaluated by immunohistochemistry (IHC) and western blot methods. Results: The expression of inflammatory and oxidative response markers increased after induction of SAP. IHC and western blot results showed the VEGF and Flt-1 expression were increased in SAP group. Prophylactic LMWH administration reduced the inflammatory and oxidative response markers expression and decreased the expression of VEGF and Flt-1. Conclusions: This study suggested that prophylactic LMWH treatment mitigated the severity of pancreatitis in rat SAP model by anti-inflammation and oxidative response. The underlying mechanism may result from downregulating VEGF/Flt-1 signaling of LMWH in SAP rat model.

Abstract Background: Inflammatory breast cancer (IBC) is the most lethal form of primary breast cancer and accounts for a significant 10 % of breast cancer deaths in the USA owing to its aggressive proliferation and metastasis, and a lack of effective therapeutic options. Unraveling the underlying mechanisms of growth and metastasis of this aggressive disease could lead to effective therapeutic strategies for an improved outcome in IBC patients. We recently generated in vitro and in vivo IBC models for brain metastasis studies [Debeb et al. JNCI, 2016] and observed an upregulation of Lipocalin 2 (LCN2), a small, secreted iron-trafficking protein which plays a significant role in immune and inflammatory responses and the promotion of malignant progression. The purpose of this study was to investigate the function of LCN2 in IBC tumorigenesis and metastasis. Methods: Stable knockdown (KD) of LCN2 in IBC cell lines was achieved with lentiviral vectors. Proteomic and gene expression profiling were performed using RPPA and Affymetrix Clariom D microarray. For in vivo studies, control and LCN2 KD IBC cells were transplanted into the cleared mammary fat pad of SCID/Beige mice. Tumor-skin involvement was assessed visually during primary tumor growth and tumor excision. LCN2 gene expression levels in clinical samples were analyzed from the IBC Consortium as well as public data sets. LCN2 serum levels in IBC patients were measured using ELISA and were correlated with clinicopathological variables and outcome data. Results: LCN2 gene expression is higher in IBC versus non-IBC patients (p=0.00036), independently of the molecular subtypes, and higher in more aggressive (TNBC and HER2+) than hormone receptor-positive subtypes (p<0.00001). LCN2 expression in patient tissues is correlated with reduced overall survival (p<0.00001) and metastasis-free survival (p=0.04) in non-IBC; however, LCN2 was not associated with overall survival in IBC patient serum samples. LCN2 expression was also significantly higher in IBC cell lines, in their culture media, and in brain metastasis sublines compared to non-IBC cell lines (p=0.004). In IBC cell lines, LCN2 KD reduced proliferation, colony formation, migration, and cancer stem cell properties. In vivo silencing of LCN2 in SUM149 cells inhibited primary tumor growth (p=0.001)and resulted in a well-differentiated tumor histology. Additionally, SUM149 LCN2 KD significantly reduced skin invasion/recurrence (LCN2 control vs LCN2 KD: 88 % vs 25 %, p=0.01) suggesting LCN2 is a mediator of tumorigenesis. Analysis of proteomics data showed changes in major signaling pathways including PI3K-Akt signaling and EGF/EGFR signaling pathways. Mechanistically, LCN2 depletion in SUM149 abrogated EGF-induced EGFR phosphorylation and ERK activation. Conclusions: Our findings suggest that LCN2 may drive IBC tumor progression and skin invasion/recurrence potentially via the EGFR signaling pathway.Future studies will determine the role of LCN2 in metastasis and pinpoint the detailed mechanisms of LCN2-mediated IBC tumorigenesis and recurrence. Citation Format: Villodre ES, Larson R, Hu X, Stecklein SR, Gomez K, Finetti P, Krishnamurthy S, Ivan C, Su X, Ueno NT, Van Laere S, Bertucci F, Tripathy D, Vivas-Mejía P, A Woodward W, Debeb BG. Lipocalin 2 promotes inflammatory breast cancer tumorigenesis and skin invasion [abstract]. In: Proceedings of the 2018 San Antonio Breast Cancer Symposium; 2018 Dec 4-8; San Antonio, TX. Philadelphia (PA): AACR; Cancer Res 2019;79(4 Suppl):Abstract nr P2-01-03.

A double-layer coatings structure on the surface of ms-ZnS substrate is designed and fabricated. The outer face of the ms-ZnS is coated with DLC/BP as high performance protective and antireflective coatings, and the inner face is coated with YbF3 and ZnS as high efficient antireflective coatings. The transmittance, nano-hardness and environmental durability of the coated ms-ZnS are measured by FTIR spectroscopy, nano-hardness tester and simulative harsh environmental test specified by MIL-48616, respectively. It shows that, in the waveband of 8–12 μm, the measured maximum transmittance is about 93.3% and the average transmittance is about 87.9%. After coated with DLC/BP, the nano-hardness of ms-ZnS samples increases from 2.5 to 19.5 GPa. The coated ms-ZnS passes the environmental tests, which indicates that it can meet the demands of (long-wave infrared) LWIR electro-optics systems working in harsh environment.

The characteristics and method of the technique of manufacturing ZnS by chemical vapor deposition was introduced.On the base of the reactor model,the effects of flow and pressure on the deposition process were simulated.The results show that,with the decrease of gas flow,the flow increases,the back flow area increases and the deposition rate increases.With the decrease of pressure decreases,the flow increase,the back flow area increases and the deposition rate distribute uniformly.The result of simulation is helpful for controlling the factors of the depostion process.

First-principles simulation and PACVD experiment are used to reveal the atomic and electronic structure of BP4. With melting-quenching technique in molecule dynamics, for the first time we obtain the microscopic atomic picture for the amorphous BP4. Here, boron essentially retains a coordination number of 4 and sp(3) electronic bonding whereas phosphorus has a lower coordination number of 3.2 and coexistence of sp(3) and p electronic bonding. The cohesive energy of the present amorphous BP4 model is up to -5.32 eV/atom which is 1.6 times stronger than -3.37 eV/atom of the usual protected c-ZnS. (c) 2012 Elsevier B.V. All rights reserved.

Ge–Sb–Te alloys have played a critical role in present nonvolatile optical and electrical storages. It is generally accepted that their “data encoding” (i.e. amorphization) needs the crystal melting and subsequent quenching. Therefore, liquid should be an important intermediate state during the storage. In this study, based on first-principles molecular dynamics we compared the structural properties of liquid Ge–Sb–Te alloys with three compositions: Ge1Sb2Te4, Ge2Sb2Te5, and Ge4Sb1Te5. In long timescale mean square displacements (MSD), we observe that the element coupled state for Ge1Sb2Te4 and Ge2Sb2Te5 is significantly better than that of Ge4Sb1Te5. The careful analyses by pair correlation functions (PCF) and compositional disorder numbers (CDN) show that Ge2Sb2Te5 has the best stability among the three liquids. Bond angle distributions (BAD) further reflect that all the three liquids essentially retain the crystalline character of local structure with 90˚ bond angle. The present results are helpful to understand the rapid storage technique based on Ge–Sb–Te alloys.

Boron phosphide (BP) coatings were deposited on ZnS substrate by PACVD with diborane (B2H6) and phosphine (PH3) as the precursors. The XRD and SEM showed that all the BP coatings were amorphous when the PH3 flux changed from 40 to 80sccm. The hardness and the elastic modulus of the BP coatings decreased with the increase of PH3 flux. The composition depth profiles of BP coatings were measured by XPS. The results showed that the ratio of P and B firstly increased and then decreased with the increase of etching time, however, no new stable compound formed across the interface between BP and ZnS.

SiCl4 was one of the main materials for making optical fiber,and its quality would decide the transmission performance of optical fiber.As one kind of hydrogen impurities which was often found in SiCl4,concentration of SiHCl3 would influence on the quality of SiCl4.The progress on removal of SiHCl3 in SiCl4 was summarized.The removing methods mainly included rectification method,plasma method,photochemistry method and other methods such as adsorption method,partial hydrolysis method,etc.Rectification was a popular method to purify SiCl4 in China.However,there existed a certain limit in rectification for removal of SiHCl3 in SiCl4 because the boiling point of SiHCl3 and SiCl4 was closer.The effect of plasma method on removing SiHCl3 was good but relatively high equipment and technique was needed.Photochemistry method was effective for removal of SiHCl3,and content of SiHCl3 could drop below 1×10-6.Determination of SiHCl3 in SiCl4 was also discussed,including gas chromatogram determination,Fourier transform infrared spectroscopy(FT-IR),and infrared spectroscopy.Gas chromatogram had the characteristic that μg level of SiHCl3 could be detected in a few milligrams of SiCl4,and detection limit was 0.1×10-6.FT-IR method could be used in experimental analysis and production site analysis,and detection limit was 0.6×10-6.The detection limit of infrared spectroscopy for SiHCl3 was 2×10-6.Researches for removal and determination of SiHCl3 in SiCl4 were important to purification of high-purity SiCl4 for optical fiber,so as to the localization of critical material for optical fiber.

As lower temperature gradient and lesser crystal growth rate could be realized in the crystal grown by VGF technique, VGF was one of the main process for large-size and high quality crystal growing. Ge crystal of 6 inch growing with VGF process was studied by numerical simulation, and the module based on the VGF crystal growing furnace designed by GRINM (General Research Institute for Non-Ferrous Metals of Beijing). The result showed that the temperature gradient (approach the interface) in crystal and melt was lower. Particularly, when the crystal was grown at full-grown segment, the axial temperature gradient was between 2~3 K·cm-1 in the crystal and 0.8~1 K·cm-1 in the melt. The thermal stress was between (2~9)×104 Pa, lower CRSS (Critical Resolved Shear Stress) of Ge crystal except that at the edge of crystal. At the same time, the interface kept a flatness shape. The gap between the crucible and the support had a great affect on the "interface effect". The heat flux vertical the wall of the p-BN crucible was increased by reducing the width of the gap from 8 mm to 2 mm, which led the maximum thermal stress at the edge of crystal to reduce to 0.21 MPa. The value was equivalent to the CRSS of Ge crystal, and the thermal field had been optimized.

There was a gap between the crucible and the support in the process of 6 inch GaAs single crystal grown by VGF(Vertical Gradient Freeze) technique,which had great effect on the solid-liquid interface shape and the thermal field.With the aid of the numerical simulation,it could be found that when the gap′s area was bigger,the interface′s position in the axial direction was lower.A plant interface was achieved when there was a cone gap.Two different solutions about the gap stuffs to optimize the temperature field were carried out.The numerical simulation results showed that there was a smooth thermal stress distribution curve along the axial direction when the gap was stuffed by Ga.In this situation,a high quality GaAs single crystal with low dislocation density could be achieved.

采用专业晶体生长数值模拟软件CrysMas,模拟了垂直梯度凝固法(VGF)生长4英寸GaAs单晶过程中的固液界面形状,发现晶体在生长过程中固液界面形状经历了由凹到凸的变化.数值模拟结果表明熔体中和晶体中的轴向温度梯度之比小于0.4时,固液界面为凸向熔体,与理论推导结果一致.模拟了晶体生长过程中固液界面附近的晶体中的热应力值,发现固液界面为平界面时晶体中的热应力具有最小值.推导计算了VGF GaAs单晶生长过程中固液界面凹(凸)度的临界值,当固液界面凹(凸)度小于该值时,晶体中的热应力低于临界剪切应力.

The crystal growth rate was critical to the quality and production efficiency. The optimization aimed at to achieve higher production efficiency and to ensure the quality. In VGF crystal growth procedure, the crystal growth rate depended on the temperature at control point and the cooling rate. The 6 inch VGF-GaAs crystal grown was studied at rates of 0.9, 1.8, and 3.6 mm·h -1 respectively with the aid of numerical simulation. By comparing the temperature gradient, the interface shape and the thermal stress distribution in the crystals grown at those rates, some results were presented: Increasing crystal growth rate, the axial temperature gradient was increased, and the accretion along radius was also faster. Because of the effect of higher heat conductivity of BN crucible along the wall, the axial temperature gradient decreased quickly at the edge of crystal, also the radial temperature gradients in the crystal grown at different rates became minus after 70 mm along radius. Large amount of heat flux flew out along the crucible wall and lead the crystal growth edge and corner upturned. As the growth rate increasing, the interface shape changed from convex to flatness and concave, 'interface effect' was strengthened, the angle between interface and crucible wall became smaller and the incidence of twin and polycrystalline increased. It was found that the crystal interface with growth rate of 1.8 mm·h -1 was flat, the thermal stress at the center and edge were lower, and the production efficiency was bigger, so the optimized growth rate was determined to be 1.8 mm·h -1.

The cone angle of crucible was one of the important factors that induced the VGF GaAs monocrystal to become twin crystal or polycrystal. The growth of VGF GaAs monocrystal was researched by numerical simulation, the results showed that all the solid liquid interfaces were concave to the liquid in shouldering process when the cone angle of crucible was 60°, 90° or 120°. With the cone angle of crucible becoming bigger, the contact angle becoming smaller, the probability of heterogeneous nucleation was increased, twin crystal and poly-crystal was induced occurred. Thus twin crystal or polycrystal was achieved easily. According to the analysis of heat transfer, in transition process, with the cone angle of crucible becoming bigger, the heat transfer along the axial direction was reduced and the heat transfer along the radial direction was increased, so the radial temperature gradient was increased and then the concave interface was achieved, lead to the increase of overcooling at triple point and also the incidence of twin crystal or poly-crystal. In diameter growth process, as the solid-liquid interface was far from the diameter-increasing part of the crucible, the cone angle of crucible affected the single crystal growth very slightly. Considering the efficiency of single crystal growth to achieve much longer diameter part, the appropriate cone angle of crucible was needed. Both of the numerical simulation study and experiment results proved that the 90°cone angle of crucible was the best. It could improve the probability and efficiency of single crystal. Then 4″ GaAs monocrystal was achieved.

Removing of trichlorosilane,which is often found in silicon tetrachloride with photochemistry method was studied using raw silicon tetrachloride from market as material.Major factors influencing photoreaction effect and relationship of these factors were analyzed during the photoreaction process using ultraviolet light at 330~380 nm.Results showed that photoreaction time increases with the dosage of raw material increases and the decrease of light intensity.In order to remove trichlorosilane,the amount-of-substance ratio of chlorine to trichlorosilane must be greater than 22∶1 at least.There existed a critical value,when amount-of-substance ratio of chlorine to trichlorosilane was not over it,photoreaction time decreased as the amount-of-substance ratio increased,otherwise photoreaction time will only increased.In addition,the bigger the light intensity,the smaller the critical value.

美国、俄罗斯、中国、印度、日本、欧洲等国家都投入大量的资源发展空间技术.目前,空间电源的主要来源是太阳电池.但由于传统的硅太阳电池受到空间辐射后电池性能衰减较快,转换效率低等影响,不能满足先进飞行器的要求.而GaAs太阳电池具有高转换效率、耐辐射、温度特性好和寿命长等优点,但GaAs单晶生长工艺困难,难于获得大尺寸结构完整的单晶,且晶片机械强度小,难以制备成超薄片,采用GaAs晶片制备太阳电池受到很大限制,无法满足应用要求,而采用锗片做衬底,在其上外延GaAs层,则能很好满足空间电池制备要求.

为了提高Ge基底的红外光能量的透过率和膜层的机械强度,对Ge基底上高性能的红外宽带减反射膜的设计与制备工艺进行了研究。介绍了红外宽带减反射膜的合理的膜料选择、膜系设计和优化方法以及采用离子束辅助沉积技术沉积该膜系的过程。给出了离子束辅助沉积技术各工艺参数,以及在最佳参数条件下制备的7.5～11.5μm波段宽带减反射膜单双面增透实测光谱曲线,其峰值透过率高达99.2%,在设计的波段范围内,平均透过率大于98%,膜层附着性能好,光机性能稳定,重复性好,能够通过GJB2485-95所规定的各项环境测试,并且光学性能没有明显的变化,这对于红外光学系统的应用具有十分重要的意义。

The numerical simulation and Raman spectroscopy were employed to study the dislocations in the VGF(Vertical Gradient Freeze) GaAs single crystal. Dislocation distribution was calculated and the numerical results were in good agreement with the experimental results. Raman spectroscopy was used to calculate the residual stress on the wafer quantitatively. The residual stress distribution was similar to the dislocation density distribution evaluated by KOH melt etching. The dislocation arrangement without completed cellular structures was observed. © Right.

Transparent conductive oxide (TCO) thin films of Mo-doped In2O3 (IMO) were prepared on glass substrates by radio frequency magnetron sputtering from the 2 wt% Mo-doped In2O3 ceramic target. The depositions were carried out under an oxygen-argon atmosphere by varying the deposition temperature from 200 degrees C to 350 degrees C. The crystal structure and thickness of IMO thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The effects of deposition temperature on the electrical and optical transmittance properties of IMO thin films were investigated by four-point probe Hall system and UV-VIS-NIR spectrophotometer separately. The optimum deposited IMO thin films were obtained with resistivity of 6.9 x 10(-4) Omega cm and carrier mobility 45 cm(2)v(-1)s(-1) at 350 degrees C. The average optical transmittance of IMO films on glass substrates are over 80% in the near-infrared region. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.