Semiconductors have long been perceived as a prerequisite for solid-state transistors. Although switching principles for nanometer-scale devices have emerged based on the deployment of two-dimensional (2D) van der Waals heterostructures, tunneling and ballistic currents through short channels are difficult to control, and semiconducting channel materials remain indispensable for practical switching. In this study, we report a semiconductor-less solid-state electronic device that exhibits an industry-applicable switching of the ballistic current. This device modulates the field emission barrier height across the graphene-hexagonal boron nitride interface with I ON / I OFF of 10 6 obtained from the transfer curves and adjustable intrinsic gain up to 4, and exhibits unprecedented current stability in temperature range of 15–400 K. The vertical device operation can be optimized with the capacitive coupling in the device geometry. The semiconductor-less switching resolves the long-standing issue of temperature-dependent device performance, thereby extending the potential of 2D van der Waals devices to applications in extreme environments.

Research in new quantum materials requires multi-mode measurements spanning length scales, correlations of atomic-scale variables with a macroscopic function, and spectroscopic energy resolution obtainable only at millikelvin temperatures, typically in a dilution refrigerator. In this article, we describe a multi-mode instrument achieving a μeV tunneling resolution with in-operando measurement capabilities of scanning tunneling microscopy, atomic force microscopy, and magnetotransport inside a dilution refrigerator operating at 10 mK. We describe the system in detail including a new scanning probe microscope module design and sample and tip transport systems, along with wiring, radio-frequency filtering, and electronics. Extensive benchmarking measurements were performed using superconductor-insulator-superconductor tunnel junctions, with Josephson tunneling as a noise metering detector. After extensive testing and optimization, we have achieved less than 8 μeV instrument resolving capability for tunneling spectroscopy, which is 5-10 times better than previous instrument reports and comparable to the quantum and thermal limits set by the operating temperature at 10 mK.

Intrinsic defects in graphitic materials, like vacancies and edges, have been expected to possess magnetic states from the many-body interaction of localized electrons. However, charge screening from graphite bulk carriers significantly reduces the localization effect and hinders the observation of those magnetic states. Here, we use an ultra-low-temperature scanning tunneling microscope with a high magnetic field to observe the magnetic states of atomic vacancies in graphite generated by ion sputtering. Scanning tunneling spectroscopy reveals localized states at the vacancies, which exhibit splitting at a certain magnetic field whose separation increases with the field strength. The transition is well described by the “Anderson model,” which describes the emergence of localized magnetic states inside the metallic reservoir through electron–electron interaction. The interaction strength is estimated to be between 1 meV and 3 meV, which is supported by the density functional theory calculation. The observation provides an important foundation for application of intrinsic defects to carbon-based spintronic devices.

Localization and electron correlation play significant roles in understanding the electronic states of low-dimensional systems. We carried out the tunneling spectroscopy measurements on a crystalline nano-sized island and a disordered two-dimensional metal film. The low temperature zero-bias anomaly was studied using PE theory and statistical analysis of the spatial distribution of the local density of states in both the systems. The effective capacitance and resistance of the tunnel junction extracted from PE theory gives the energy and temperature dependency of the measured ZBA. Statistical analysis reveals the electron correlation effect and the electron correlation length. By combining PE theory and the statistical analysis, we found that the microscopic origin of ZBA formation in the disordered two-dimensional film is strongly related to the electron localization and the correlations.

Well-defined nanostructures constructed with functional molecules provide a feasible route to realize molecular nanotechnology. Synthesis of selectively interacting molecules is essential to develop nanostructures with desired functionalities and dimensions. Substantial efforts have been devoted to achieve finely controlled supramolecular structures on surfaces using various interactions such as van der Waals (vdW), dipolar, hydrogen boning, and metal–ligand interactions. Yet, controlling the dimensions of a supramolecular assembly by changing the strength of the intermolecular vdW interactions, in particular through attaching alkyl chains of different lengths, has not been reported so far. Here, we present the dimensionality control of self-assembled azobenzene derivatives, from one-dimensional chain to two-dimensional island, on an Au(111) surface by exploiting vdW interactions assisted by hydrogen bonding. The designed azobenzene derivatives have alkoxy groups with different chain lengths (6, 8, and 10 carbons). Depending on the alkyl chain length, the molecules self-assemble into two different stacking structures, which determine the dimensionality of the superstructures. Furthermore, we demonstrate that the reconstructed herringbone structures of the substrate determine the stacking structure and growth direction at the elbow of the Au(111) surface. Our results provide a new perspective for engineering well-defined nanostructures with functional molecules as well as deeper insights into the mechanism of molecular self-assembly on surfaces.

We studied the geometric and local electronic structure of a Se-adsorbed Au(111) surface. The reconstructed herringbone structure disappeared and the Au(111) surface states were attenuated with Se adsorption on the Au(111) surface, as explained by density functional theory calculations. Electron interference patterns were observed on the exposed Au (111) surface due to electron scattering by potential barriers formed by Se adsorbates. A strong bound state from the Se p-orbital on top of the Se clusters with quantum confinement effects were observed using scanning tunneling microscopy and spectroscopy.

The observation of surface phonon dispersion using local probes can provide important information related to local structural and thermal properties. In this study, surface phonon modes on a Cu(100) surface were measured using the inelastic tunneling spectroscopy of scanning tunneling microscopy (STM-IETS) with atomically sharp tips. Different phonon modes were selectively measured depending on the structures of the probing tips or the surfaces. Two different surface phonon modes, at 19.0 meV on a clean Cu(100) surface and at 13.5 meV on an oxygen-adsorbed Cu(100) surface, are explained by the selection rules. Additionally, the spatial variation in STM-IETS showed surface stress relaxation.

Whether or not epitaxially grown superconducting films have the same bulk-like superconducting properties is an important concern. We report the structure and the electronic properties of epitaxially grown Ba(Fe1-xCox)2As2 films using scanning tunneling microscopy and scanning tunneling spectroscopy (STS). This film showed a different surface structure, (2sqrtx2sqrt2)R45 reconstruction, from those of as-cleaved surfaces from bulk crystals. The electronic structure of the grown film is different from that in bulk, and it is notable that the film exhibits the same superconducting transport properties. We found that the superconducting gap at the surface is screened at the Ba layer surface in STS measurements, and the charge density wave was observed at the surface in sample in the superconducting state.

We report a rectangular charge density wave (CDW) phase in strained 1T-VSe2 thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a×√3a periodicity, as opposed to the previously reported hexagonal 4a×4a structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same 4a×√3a CDW periodicity and an energy gap of 2ΔCDW = (9.1 ± 0.1) meV. The CDW energy gap evolves into a full gap at temperatures below 500 mK, indicating a transition to an insulating phase at ultra-low temperatures. First-principles calculations confirm the stability of both 4a×4a and 4a×√3a structures arising from soft modes in the phonon dispersion. The unconventional structure becomes preferred in the presence of strain, in agreement with experimental findings.

A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ∼7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).