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The Nanoscale Processing and Devices Group investigates the processing of semiconductors and other materials at the nanometer scale level and applies these techniques to the realization of ultra-high speed optoelectronic devices and circuits. Electron beam lithography with novel resist materials coupled with various dry etching methods are used to achieve nanoscale patterning. The impact of processing at these dimensions are investigated on the performance of heterostructure field effect transistors, photonic, and other quantum effect devices in compound semiconductor materials such as Indium Phosphide, Gallium Nitride, and Silicon Germanium. The Group conducts research on various aspects of the fabrication of these devices including ohmic contact formation, Schottky contact formation, isolation methods. Micro/nano analytical methods are utilized to investigate material conditions needed to achieve optimum processes. Recent thrusts for the nanofabrication work are in the application area of biochemical nanotechnologies. Nanotechnology and nanoelectromechanical systems; electronic and transport properties of nanometer-scale semiconductor structures; high-speed optoelectronic devices and integrated circuits; and radiation effects.
I have awarded 34 Ph.D.s and 21 M.S. degrees; supervised 19 post-doctoral fellows; and supervised numerous undergraduate research projects. I’ve received research funding from the State of Illinois, NSF, NASA, JSEP, SRC, NIH, University of Illinois Research Board, UIUC-CRI, ONR, Beckman Institute, ARO, ARL, DARPA, Sandia, ETRI (Korea) and industry (KOPIN, CREE, Samsung, Intel, McDonnell-Douglas, APA Optics, TRW, ATMI/Epitronics, NZAT, SVT, Triquint, EMCORE, Sarnoff, and GTE).
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Microelectronic Engineeringno. 4-6 (2009): 521-523
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