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职业迁徙
个人简介
His activities have included the research of the degradation phenomena and reliability assessment of SiO2, SiON, high-k, and ferroelectric films, planar and multiple-gate FETs, circuits, and characterization of Ge/III–V and MIM devices. He is currently serving on the IEEE T. Electron Dev. Editorial Board.
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crossref(2024)
IEEE Transactions on Device and Materials Reliabilityno. 3 (2023): 346-354
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K. Kaczmarek,M. Garcia Bardon,Y. Xiang, N. Ronchi,L. -A. Ragnarsson, U. Celano,K. Banerjee,B. Kaczer,G. Groeseneken,J. Van Houdt
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IEEE Transactions on Electron Devicesno. 12 (2023): 6512-6519
2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-7, (2023)
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