Dae Woong Kwon received the Ph.D. degrees in electrical engineering from Seoul National University, Seoul, South Korea, in 2017. He joined the University of California at Berkeley, Berkeley, CA, USA, in 2017, as a Post-Doctoral Fellow. He had designed nand flash memory devices from 2005 to 2014 with Samsung Electronics, Yongin, South Korea. His current research interests include negative capacitance FET, nand flash memory, tunnel FET, bio-sensor, and metal oxide thin-film transistors.