Evgeniia Shabunina

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Deep trap analysis in green light emitting diodes: Problems and solutions

A. Y. Polyakov,N. M. Shmidt,N. B. Smirnov, I. V. Shchemerov,E. I. Shabunina, N. A. Tal’nishnih,In-Hwan Lee, L. A. Alexanyan, S. A. Tarelkin,S. J. Pearton

Journal of Applied Physics, no. 21 (2019): 215701

Bibtex

The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells

N.M. Shmidt,A.E. Chernyakov, N.A. Tal'nishnih,A.E. Nikolaev,A.V. Sakharov, V.N. Petrov, E.V. Gushchina,E.I. Shabunina

Journal of Crystal Growth, (2019): 82-84

Bibtex

Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes

V. A. Dobrov,V. V. Kozlovski, A. V. Mescheryakov, V. G. Usychenko, A. S. Chernova,E. I. Shabunina,N. M. Shmidt

Semiconductors, no. 4 (2019): 545-551

Bibtex

Graphene/SiC Functionalization for Blood Type Sensing Applications

S. P. Lebedev,Alexander Usikov,S. Novikov,E. I. Shabunina,N. M. Shmidt,Iosif Barash, Alexander Roenkov,Alexander A. Lebedev,Yuri N. Makarov

Materials Science Forum, (2018): 909-912

Bibtex

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Tal’nishnih,A. E. Chernyakov,E. I. Shabunina, N. M. Shmidt,A. S. Usikov, A. P. Kartashova, A. A. Zybin,Vitalii V. Kozlovski, M. F. Kudoyarov

Semiconductors, no. 7 (2018): 942-949

Bibtex

Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation

A. Y. Polyakov,N. M. Shmidt,N. B. Smirnov, I. V. Shchemerov,E. I. Shabunina, N. A. Tal'nishnih, P. B. Lagov,Yu. S. Pavlov, L. A. Alexanyan,S. J. Pearton

ECS Journal of Solid State Science and Technology, no. 6 (2018)

Bibtex

Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

In-Hwan Lee,A. Y. Polyakov,Sung-Min Hwang,N. M. Shmidt,E. I. Shabunina, N. A. Tal'nishnih,N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin,S. J. Pearton

Applied Physics Letters, no. 6 (2017): 062103

Cited by4Bibtex

Peculiarities of defect generation under injection current in LEDs based on A3N nanostructures

N M Shmidt,Evgeniia Shabunina,A S Usikov,Anton Chernyakov, Sergey Kurin,Hikki Helava,Yuri Makarov

Physica Status Solidi (c), (2015)

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Peculiarities of defect generation under injection current in LEDs based on group‐III nitride3N nanostructures

N M Shmidt,Evgeniia Shabunina,A S Usikov,Anton Chernyakov, Sergey Kurin,Hikki Helava,Yuri Makarov

Physica Status Solidi (c), (2015)

Bibtex

Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias

E I Shabunina,M E Levinshtein,N M Shmidt,Pavel A Ivanov,John W Palmour,Lin Cheng

Materials Science Forum, (2015)

Bibtex

1/ f noise in forward biased high voltage 4H-SiC Schottky diodes

E I Shabunina,M E Levinshtein,Natalia M Shmidt,Pavel A Ivanov,John W Palmour

Solid-state Electronics, (2014)

Cited by1Bibtex

Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs

A E Chernyakov,M E Levinshtein, N A Talnishnikh,E I Shabunina,N M Shmidt

Journal of Crystal Growth, (2014): 302-304

Bibtex

Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy

N M Shmidt,A S Usikov,E I Shabunina,A E Chernyakov,A V Sakharov, S Yu Kurin, A A Antipov,I S Barash,A D Roenkov,Yu N Makarov,H Helava

Technical Physics Letters, no. 7 (2014)

Bibtex

Extended defect system as a main source of non‐radiative recombination in InGaN/GaN LEDs

Evgeniia Shabunina, N S Averkiev,Anton Chernyakov,M E Levinshtein, Pavel O Petrov,N M Shmidt

Physica Status Solidi (c), (2013)

Cited by4Bibtex

Mechanisms behind efficiency droop and degradation in InGaN/GaN LEDs

N M Shmidt, A A Greshnov,Anton Chernyakov,M E Levinshtein,A L Zakgeim,Evgeniia Shabunina

Physica Status Solidi (c), (2013)

Cited by1Bibtex

Failure mechanisms in blue InGaN/GaN LEDs for high power operation

A. E. Chernyakov,M. E. Levinshtein,P. V. Petrov,N. M. Shmidt,E. I. Shabunina,A. L. Zakheim

Microelectronics Reliability, no. 9 (2012): 2180-2183

Cited by2EIBibtex

Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current

B. Ya. Ber,E. V. Bogdanova,A. A. Greshnov,A. L. Zakgeim,D. Yu. Kazanzev,A. P. Kartashova,A. S. Pavluchenko,A. E. Chernyakov,E. I. Shabunina,N. M. Shmidt,E. B. Yakimov

Semiconductors, no. 3 (2011): 415-421

Cited by2Bibtex

Two channels of non-radiative recombination in InGaN/GaN LEDs

N.S. Averkiev,A.E. Chernyakov,M.E. Levinshtein,P.V. Petrov,E.B. Yakimov,N.M. Shmidt,E.I. Shabunina

Physica B: Physics of Condensed Matter, no. 23 (2009): 4896-4898

Cited by3EIBibtex

Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current

N. S. Averkiev,M. E. Levinshtein,P. V. Petrov,A. E. Chernyakov,E. I. Shabunina,N. M. Shmidt

Technical Physics Letters, no. 10 (2009): 922-924

Cited by1Bibtex

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Evgeniia ShabuninaBinding

Papers19 papers

Evgeniia Shabunina