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Since joining UT-Dallas, professor Fischetti has continued his work on the theory of electronic transport in semiconductors exploring the limits of device scaling and extended the study of two-dimensional materials. Prof. Fischetti is a Fellow of the American Physical Society and was a co-recipient of the 2011 IEEE Cledo Brunetti Award for his work on the physics of electron transport in solids.
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2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPADpp.33-36, (2023)
APPLIED PHYSICS LETTERSno. 25 (2023)
NPJ 2D MATERIALS AND APPLICATIONSno. 1 (2023)
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)pp.1-2, (2022)
Solid-State Electronics (2022): 108458
Springer Handbook of Semiconductor DevicesSpringer Handbookspp.1515-1558, (2022)
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