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Frank Mehnke received the Diploma degree in physics in 2011 from the Technische Universität
Berlin, Berlin, Germany, where he is currently working toward the Ph.D. degree. In 2014, he visited Linköping
University, Sweden, for a short-term research stay investigating the electronic properties of the silicon donor in
high aluminum mole fraction AlGaN. His research interests include the growth and characterization of wide-bandgap
III-nitride semiconductors, in particular the development of deep ultraviolet light-emitting diodes.
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Hoon Jeong,Minkyu Cho, Zhiyu Xu,Frank Mehnke, Nepomuk Otte,Shyh-Chiang Shen, Theeradetch Detchprohm,Russell D. Dupuis
APPLIED PHYSICS LETTERSno. 12 (2023)
APPLIED PHYSICS LETTERSno. 12 (2023)
Gallium Nitride Materials and Devices XVII (2022)
Scientific Reportsno. 1 (2022): 1-3
Martin Guttmann,Neysha Lobo-Ploch,Heiko Gundlach,Frank Mehnke,Luca Sulmoni,Tim Wernicke,Hyun Kyong Cho,Katrin Hilbrich, Alexander Kuelberg, Matthias Friedler,Thomas Filler, Indira Kaepplinger,
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