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个人简介
Rosana Rodriguez received the Ph.D. degree in electrical engineering from the Universitat Autonoma de Barcelona (UAB), Barcelona, Spain, in 2000.
Funded by the Fulbright Program, she worked on devices and circuits reliability at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA. She is currently an Associate Professor at the UAB. Her research is focused on the variability and reliability of advanced CMOS devices. She is interested in the electrical characterization and modeling of process-related and time-dependent variability sources as random telegraph noise (RTN) and aging mechanisms as bias temperature instability (BTI) and hot carrier injection (HCI). Her research includes the study of the variability impact on the performance of single devices and digital and analogical circuits. She is also interested in the characterization of resistive switching devices (memristors) and their application for nonvolatile memories, computing, and neuromorphic applications.
研究兴趣
论文共 172 篇作者统计合作学者相似作者
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Journal of Low Power Electronics and Applicationsno. 2 (2024): 30
Solid-state electronics (2024): 108895-108895
Solid-state electronics (2023): 108735-108735
SMACDpp.1-4, (2023)
Solid-state electronics (2023): 108667-108667
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS (2023)
2022 18th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)pp.1-4, (2022)
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作者统计
#Papers: 175
#Citation: 2207
H-Index: 25
G-Index: 40
Sociability: 6
Diversity: 3
Activity: 22
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