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个人简介
Steven L. Wright received the B.S. and M.S. degrees in electrical engineering from the University of Colorado Boulder, Boulder, CO, USA and the Ph.D. degree in electrical engineering from the University of California at Santa Barbara, Santa Barbara, CA, USA, in 1982.
His Ph.D. work concerned the growth of GaP on Si by molecular beam epitaxy and the fabrication of a bipolar heterojunction transistor using GaP as a wide bandgap emitter. From 1982 to 2018, he was a Research Staff Member with IBM Watson Research, Yorktown Heights, NY, USA, where he was involved with materials science and physics of III–V compound semiconductor heterojunction devices, thin-film-transistor liquid-crystal amorphous-Si flat panel displays, display human factors, high-resolution visualization technology, 3-D integrated silicon technology, biomedical devices, and packaging and process technology for artificial intelligence hardware systems. Two of his publications were cited in the 2000 Nobel laureate lecture given by his advisor, Dr. Herbert Kroemer.
Dr. Wright was a recipient of 12 IBM Invention Achievement Awards, 4 IBM Research Division Awards, and contributed to more than 180 publications. In 2014, his presentation at the Semiconductor Wafer Test Workshop, entitled Transferable Fine-Pitch Probes, received an award as the Most Inspirational Presentation.
研究兴趣
论文共 35 篇作者统计合作学者相似作者
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Raschid J Bezama,Timothy H Daubenspeck,Gary Lafontant,Ian D Melville,Ekta Misra,George J Scott,Krystyna W Semkow,Timothy D Sullivan, Robin A Susko, Thomas A Wassick, Xiaojin Wei,S L Wright
mag(2014)
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#Papers: 35
#Citation: 2188
H-Index: 23
G-Index: 33
Sociability: 5
Diversity: 1
Activity: 0
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