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Yasumitsu Murai received the BS degree in electric engineering from Kinki University, Osaka, Japan, in 1990. In 1990, he joined the LSI Design Center, Mitsubishi Electric Engineering Co., Ltd., Hyogo, Japan. Since then, he has been engaged in the research and development of content addressable memory, synchronous DRAMs, and embedded DRAMs. Now, he is a senior staff engineer of the Memory IP Technology Department 2 in Renesas Electronics Corporation, Tokyo, Japan. He has been engaged in the research and development of Flash memory, embedded MRAM for MCUs, and now is engaged in the Normally-Off computing architecture as for further low-power solution with NVRAMs.
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