ABSTRACT Transparent electrodes are essential components of flexible optoelectronic devices, incorporating nanofibers into their design enhances the functionality, flexibility, and optical performance. In this work, electrospun freestanding gold or silver metalized networks have been produced combining two simple and industrially scalable techniques, such as electrospinning and sputtering, resulting in readily usable nanofiber electrodes. The metalized nets are thoroughly characterized in terms of morphology, composition, and optical behavior, as a function of mesh transmittance and metal layer thickness, revealing a superior figure of merit (reaching 808 for Au‐coated nanofibers). The use of nylon 6/6 enhanced the robustness of the electrodes due to its intrinsic flexibility and resistance, leading to both high conductivity and transparency. Sheet resistances of approximately 3.05 Ω sq −1 for Au and 8.40 Ω sq −1 for Ag are obtained for meshes of up to 95% optical transmittance. At their highest transparency, these electrodes—once transferred onto flexible substrates—function effectively as a conductive medium capable of lighting a commercial LED. They also perform reliably as electrochemical electrodes, demonstrating their suitability for portable electrochemical devices. This fabrication strategy allows the production of large‐area transparent electrodes, which can be readily integrated with portable optoelectronic/electrochemical devices, for a broad variety of applications.
ABSTRACT Correlated oxides are emerging materials with a broad range of applications in next‐generation devices, most recently as attractive, earth‐abundant transparent conductive electrodes for photovoltaics and electro‐optic devices. SrVO 3 (SVO), a model correlated metal and a promising transparent conducting oxide, develops a several‐nanometer‐thick V 5 + near‐surface region (NSR) under ambient conditions. This oxidized layer obscures the intrinsic correlated‐metallic V 4 + character and limits both fundamental studies of the physics and the material's integration into electronic devices. Here, we demonstrate a direct and controllable approach for recovering the metallic SVO by thermally reducing the NSR under ultra‐high vacuum. Real‐time in situ X‐ray photoelectron spectroscopy reveals a sharp transformation from a V 5 + ‐dominated surface to mixed valence states, dominated by V 4 + (∼65% of the spectral weight), and a recovery of its metallic character. This is compared with a comprehensive ex situ analysis, suggesting this transformation is accompanied by mass redistribution and partial oxygen loss, leading to nanoscale surface reorganization and modest lattice expansion without loss of perovskite crystallographic integrity. These findings establish a practical method for obtaining predominantly V 4 + SVO surfaces without protective capping layers, a capability that expands the engineering and design space of correlated oxides for functional devices.
ABSTRACT Transparent and flexible microwave absorbers (TFMAs) are highly desirable for next‐generation electromagnetic stealth and shielding systems that demand conformal integration onto curved or deformable platforms, such as aircraft radomes, flexible displays, and wearable optoelectronic devices. However, most existing transparent absorbers rely on rigid substrates or brittle conductive layers, which are fundamentally incompatible with flexible and conformal applications. In this work, we propose an all‐mesh‐based multilayer TFMA that consists of a nested double open‐ring resonant layer formed by metallic meshes and a mesh‐covered reflective backing. Unlike continuous conductive films, the subwavelength mesh topology sustains intense localized electromagnetic resonance while permitting high visible transmission. This design enables a broadband absorption exceeding 90% across 4.9–12.3 GHz, covering both C‐ and X‐bands, and simultaneously exhibits an average visible transmittance of 75.8% and excellent mechanical flexibility. Moreover, the absorber delivers robust polarization and angle‐insensitive performance under oblique incidence, and retains over 80% absorption efficiency after rigorous static and cyclic bending tests, confirming exceptional mechanical durability. This work establishes a scalable design strategy for transparent microwave absorbers based on mesh‐engineered electromagnetic architectures, offering a promising pathway toward conformal electromagnetic protection compatible with optoelectronic and curved platforms.
ABSTRACT The coexistence of high mobility and ideal current–voltage transistor characteristics is highly desirable for real‐work applications of field‐effect transistors. However, very few high‐mobility polymer transistors can exhibit reliability factors >70%, and even rarer for electron‐transporting devices. In this work, we report a coexistence of a reliability factor of 90% and high mobility of 0.6 cm 2 V −1 s −1 in FBDPPV‐based transistors and, more importantly, systematically investigate the origin by combining optical and microstructural characterizations and transport physics study. We found that in this rigid, coplanar, distortion‐free polymer FBDPPV, efficient charge transport that induces high mobility and near‐ideal transistor behaviors is supported by efficient intrachain transport and limited by energetic disorder along the interchain transport pathway consisting of disorderly connected very small grains. We also compare the structure‐property relationship of FBDPPV with some benchmark high‐mobility polymers and provide insights into rational design strategies for achieving the coexistence of high mobility and ideal current–voltage transistor characteristics.
