In the semiconductor manufacturing, the manufacturing equipment is managed via the quality control (QC). The shape of the pattern is checked whether it meets the specification. If the shape is out of the specification, some recipe parameters are modified so that the shape meets the specification. The calculation method of the recipe parameters depends on the know-how of the individual engineers, which causes difficulties in the QC. We develop the automatic calculation of the optimal recipe parameters with Advanced Process Control (APC) model in order to solve these problems.
Plasma diagnostics including electron density, temperature, neutral atomic densities of the $\mathbf{CH}_{4}/\mathbf{H}_{2}$ plasmas were performed in a capacitively-coupled reactor using surface-wave probe, Langmuir probe and vacuum ultraviolet absorption spectroscopy. The plasma density increased monotonically with varying $\mathbf{H}_{2}$ content from 30 to 90 %. The electron temperature first decreased with $\mathbf{H}_{2}$ up to 50 % and then increased at higher $\mathbf{H}_{2}$ concentration. The HF concentration reached a maximum value at a $\mathbf{H}_{2}$ of approximately 50 %, which is probably due to balance between H and F radicals from the plasma. Increasing the $\mathbf{H}_{2}$ content resulted in a higher H concentration and a less cross-linked structure of the amorphous hydrofluorocarbon films, analyzed by using in situ Fourier transformation infrared spectroscopy.
We have developed a new plasma source, reactive atmospheric-pressure micro-thermal-plasma-jet (R-μTPJ) for ultra-fast etching of photoresist. R-μTPJ was generated by DC arc discharge of Ar and O2 with input power of 260 W. local heating and simultaneous supply of reactive oxygen species has achieved an etching rate as high as 46.3 μm/s.
We have created a line balancing algorithm that uses queueing theory to calculate ideal WIP (Wafer In Process) targets by product and step taking into account the current factory bottlenecks and status, which realize higher equipment utilization, more outs, better WIP bubble/bottleneck management, and reduction of opportunity loss. In this paper, the system architecture and deployment result are described.
In this research, deposition rate dependence of 5 nm-thick ferroelectric nondoped HfO 2 (FeND-HfO 2 ) on the device characteristics was investigated. The equivalent oxide thickness (EOT) and leakage current were decreased by increasing deposition rate of HfO 2 from 5.0 nm/min to 6.0 nm/min. The subthreshold swing (SS) of 107 mV/dec. and saturation mobility (μsat) of 150 cm 2 /(Vs) were obtained with deposition rate of 6.0 nm/min. Furthermore, the threshold voltage (V TH ) was controllable as the number of identical erase pulse of 4 V/1 μs was increased, which suggested the V TH control of approximately 10 mV.
