A method is presented for studying the generation phenomena in strong fields (105 to 106 V/cm) under avalanche conditions. This allows one to determine the value of the initiating generation current (IGC) in the avalanche process, and to analyze its behaviour with respect to supplied voltage. Irregularities of the dark generation current arising with the injection of hot carriers into an insulator are shown to be due to the charge exchange between slow surface states and a space charge layer. A model of the generation center and its discharge behaviour is devised. According to this model the generation center depth and the energy position are found. Energy level of the generation center coincides with the peak of fast DOS extracted from quasi-static C-U measurements with an accuracy up to 0.1 eV. [Russian Text Ignored].
A system of differential equations describing an avalanche multiplication in MIS-structure is derived and numerically solved in frames of the uniform electric field along the interface and infinitely thin inverse layer. The dynamic characteristic of the current, time dependence of the multiplication coefficient, and the current-voltage characteristics are in a good agreement with the experimental results. [Russian Text Ignored].
The development of lasers has stimulated the appearance of new technical fields such as optical communications, laser location, optoelectronic computers, and information systems. For all these fields the primary problem is detecting short (tens of nanoseconds and shorter) weak (hundreds, tens of photons) light pulses. Today this problem is being solved by photodetectors such as photomultipliers and avalanche photodiodes with the fast-response mechanism of internal gain: multiplication of carrier numbers by impact ionization.
Самостабилизированный лавинный процесс РІ структуре металл - диэлектрик - полупроводник (МДП). Лавинные МДП-фотоприемники, Басов Рќ.Р“., Кравченко Рђ.Р‘., Плотников Рђ.Р¤., РЁСѓР±РёРЅ Р’.Р.
A report is given of a theoretical and experimental investigation of the dynamics of the interaction between an avalanche process in a metal–insulator–semiconductor (MIS) structure and light. The case of a stable avalanche is considered in detail. The main transient effects responsible for the detection of light with the aid of pulsed avalanches are studied. A good agreement is obtained between the experimental results and a theoretical model. The results of the investigation make it possible to determine the potential applications of photodetectors in the form of MIS structures operating under avalanche conditions.
It is reported that a metal–insulator–semiconductor (MIS) structure, operating in the pulsed avalanche regime, can be used as the basis of a multielement high-sensitivity fast-response photodetector array for optoelectronic applications. The principal parameters are reported for a multielement array consisting of 20 structures with internal amplification.
A theoretical and experimental investigation was made of the dynamics of a pulsed avalanche process in a metal–insulator–semiconductor (MIS) structure. It was predicted that the application of a linearly rising voltage should produce a quasi-equilibrium avalanche. Full agreement was observed between the experimental results and the theoretical model. The principal differences in the dynamics of the avalanche process were established between an MIS structure and a p–n junction. The results indicated that it should be possible to use the avalanche effect in new optoelectronic photodetection systems.
An investigation was made of the spatial resolution achieved in optical recording of information using a metal-nitride-oxide-semiconductor (MNOS) structure with a continuous electrode. A resolution of at least 10 μ in photoelectric reading was achieved only when an additional dielectric-film grid was deposited below the continuous electrode. Six bits of information were recorded experimentally as separate points.
