By using an Ar+ ion laser, a tunable Rh 6 G dye laser (linewidth 0.5 cm−1) pumped by the second harmonic of a YAG:Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu3+-doped Y2SiO5 crystal. Persistent spectral hole burning (PSHB) are observed in the Eu3+ ions spectral lines (5D0−7F0 transition) in the crystal at the temperature of 16 K. For 15 mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62 nm and at 579.82 nm are detected and the holes can remain for a long time, more than 10 h.

Third-order electric susceptibility chi((3)) of tin-phthalocyanine film deposited on a boro-silicated glass plate coated with rubbing-treated polyimide thin film was measured by a method of THG Maker-fringe technique. In the resonant absorption spectral range, the maximum values of chi((3)) of aggregated tin-phthalocyanine were 220x10(-12)esu obtained in the direction perpendicular to the rubbing direction, but the values parallel to the rubbing were 47x10(-12)esu. The large \ anisotropy of chi((3)) was induced by a preferred orientation of tin-phthalocyanine microcrystals when anisotropic substrates were heated at 200 degrees C.

分别利用氩离子激光,二倍频YAG:Nd 激光泵浦的诺明6G可调谐窄线宽(0.5 cm-1)染料激光和899-21可调谐染料激光作为光源,以单色仪-锁相放大器-光电倍增管-计算机数据采集系统记录光谱,对Y2SiO5:Eu3+晶体进行了光谱和光谱烧孔研究.在常温和液氮温度下测量了晶体的激发光谱、荧光光谱等.在16 K温度下对晶体进行了光谱烧孔研究,得到了孔宽约80 MHz并能保存10 h的永久性光谱孔.

By using an Ar+ ion laser, a tunable Rh 6G dye laser（Linewidth: 0.5 cm -1） and a Coherent 899-21 dye laser as light sources and using a monochromator and a phase-locking amplifier, the optical properties of Eu 3+∶Y 2 SiO 5 crystal were detected. Persistent spectral hole burning （PSHB） were also observed in 5D 0 -7F 0 transition in the crystal at the temperature of 16 K. For 15 mW dye laser （Wavelength: 579.62 nm） burning the crystal for 0.1 s a spectral hole with about 80 MHz hole width were detected and the hole can been keep for longer than 10 h.

Fluorescence properties of Eu 3+ :Y 2 Si0 5 have been investigated. Transitions between 5 D and 7 Fwere were studied with transmission spectra, fluorescence spectra, photoluminescence excitation (or absorption) spectra and site selective fluorescence spectra. The X-ray powder diffraction pattern of Eu 3+ :Y 2 Si0 5 shows that the crystal belong to monoclinic, and lattice’s constants a, b, c and β are obtained by a simulation with the measured diffraction angles.

The different photoelectric signals in bacteriorhordopsin areexperimentally measured when it is excited by 10 ns pulsee lasers at 1064 nm, 532 nm and 355 nm. 532 nm pulse laser is used mostly as pumping light to measure the photoelectric signals affected by the impedance of the measuring circuit. The mechanism that bacteriorhodopsin generates photo-charges and the photo-charges transfer in it was studied and analyzed. The results show that the positive and negative photoelectric signals are produced by the shift of the positive and negative charges respectively, and more energy is needed to produce positive charges than negative ones. At the same time, the positive and negative charges not only have their own transfering characteristics, but also affect each other, such as, positive charges move slowly, and negative ones fast, moreover, the negative can pull the positive to move forward, which, together with the interface between the sample and electrodes, cause the magnitude and width of the pulse photo-voltage having special dependence different from other photo-electronic devices on the linked resistance.

用514.5 nm、 488.0 nm的Ar+激光和441.6 nm的He-Cd激光激发Eu3+∶Y2SiO5晶体, 获得了一系列窄带荧光谱线, 其中双重谱线结构源于Eu3+离子发光中心在该材料中占据两种不等价的非对称光学格位. 测得了Eu3+∶Y2SiO5的X射线多晶衍射谱的面间距数据, 计算了晶格常数和晶面角度, 通过和非掺杂Y2SiO5晶体数据的比较, 探讨了Eu3+和Y2SiO5格位的相互影响.

在室温条件下, 对Eu3+:Y2SiO5晶体的透射光谱和457.9 nm Ar+激光激发荧光谱进行测量和研究. 这些光谱表明, Eu3+离子在Y2SiO5晶体中占据两种最低对称性C1格位. 利用透射光谱和荧光谱对Eu3+离子的最低激发态5D0的两种格位光谱进行了成功分离. 实验发现, 在5D0态两种格位谱的谱宽只有0.1 nm左右, 其峰间隔约为0.18 nm. 另外, 文中还测量了Eu3+离子的基态7FJ(J=0, 1, 2, 3, 4)和较低激发态5D1, 2, 以及5L6的部分精细光谱数据.

The reverse saturable absorption (RSA) in the organic material ZnTBP/CA/PhR was reported. The energy-level was studied using the rate equation theory and it was found that the absorption cross section of the first excited triplet state should be bigger than that of the ground state in RSA process. It was proved by the experiment in which an Ar PLU laser and a dye laser focused onto the sample together. The RSA in this material can be operated with a continuous-wave laser of moderate energy.

The narrow line fluorescence spectra of Eu3+: Y2SiO3 crystal were obtained by exciting with Ar+ laser at 514.5 and 488 nm and He-Cd laser at 441.6 nm. The complex spectral structure was found from taking off the energy level degeneracy of Eu3+ in the host crystal field and the possession of two inequivalent lattice sites of Eu3+ in the host crystal. X-ray powder diffraction shows that the crystal is monoclinic.

对细菌视紫红质(BR)膜的光学吸收非线性进行了研究,分别测量了细菌视紫红质光照前后的光吸收谱,结果显示它的吸收发生了明显的变化.用Z扫描法研究了它的光学非线性,理论计算的结果表明它具有较大的光学非线性系数,且通过测量它的透过率随光强变化的关系曲线和理论模拟发现它对632.8 nm波长的光具有饱和吸收特性.

Vanadyl phthalocyanine (VOPc) films in phases I, II and α-form have been fabricated into Al/VOPc indium-tin-oxide sandwich devices by vacuum deposition. Room-temperature and low-temperature visible absorption spectra, Fourier-transform infrared spectra, X-ray diffraction patterns, and electric modulation reflective spectra were used to characterize and analyze the packing structures and interactions of VOPc molecules. Bethe splitting, broadening, redshift, and thermochromism of the Q-absorption band have been observed. The photovoltaic efficiency and polarity are dependent on the intensity, wavelength, and incident direction of the illuminating light, as well as the VOPc packing form. The VOPc acts as a P-type semiconductor with a nanosecond order time response. Both the transient and steady photo-voltage is larger in the order phase II > phase I > α-form, which is proportional to the charge-transfer interaction. Both the charge-transfer excitons and Frenkel excitons have been involved in photo-carrier generation.

In this paper, optical properties of Eu3+:Y2SiO5 have been investigated. F-7(J)(J=0,1,2,3,4)<---->D-5(0,1.2) transitions of Eu3+-doped in Y2SiO5 crystal were studied by transmission spectra, fluorescence spectra, photoluminescence excitation ( or absorption) spectra and site selective fluorescence spectra. Nearly fifty Stark energy levels are recorded in our experiments. The results show that the Eu3+ ions OCCUPY two inequivalent sites whose spectral lines of D-5(0)<---->F-7(0) transitions are about 0.2nm from each other in Y2SiO5 crystal. By analyzing these spectra we also find that both sites are centers of low symmetry, the X-ray powder diffraction pattern of Eu3+:Y2SiO5 shows that the crystal is monoclinic, and lattices constants a, b, c and beta is obtained by a simulation with the measured diffraction angles. The lattice constants a, b, c is found slightly larger but very close to those of undoped Y2SiO5 crystal.

The steady-state photovoltaic action spectra of the Al/VOPc (vanadyl phthalocynine)/ITO sandwich cells illuminated by steady-state incident light were reported. The spectra depend on the wavelength of the incident light and crystal form. The spectral response of the steady-state photovoltage of VOPc in phase I, phase II and α-form respectively was studied, and the mechanism was discussed.

A high signal-to-background ratio (SBR) in the persistent single photon and photongated spectral hole-burning materials by using polarization spectroscopy was obtained. The polarization spectral hole-burning mechanism and high SBR method in experiments were reported. It shows that the polarization spectral hole-burning technique has wide prospects for the application in frequency-domain optical storage and high resolution spectroscopy in-solid.

The recent advances in the study on multiple photon-gated spectral hole-burning in solid at liquid helium temperature using an Ar laser was reported in this paper. The effects on the formation of multiple holes was analysed and a spectrum of over 100 multiple photon-gated spectral holes burnt of organic material ZntbP/CA/PhR in an inhomogeneous broadened absorption line was presented for the first time. A more narrower spectral hole determining a large multiplicity of high-density gate storage was also discussed.

The hole-burning process was studied in a donor-acceptor electron transfer system. The electron donors of this system were zinc-tetraphenylbenzoporphrin and zinc-tetraphenylbenzotribenzoporphrin. The acceptor was phydroxybenzaldhyde. They were doped in the matrix poly (methyl) methacrylate. The results show that in order to form high quality multiple holes more effectively, it is better to burn successively from the shorter wavelength side to the longer side, as the phenomenon of laser induced hole filling is depending on the wavelength, and the main mechanism of this phenomenon is the existence of pseudo-phonon side band. The theoretical simulation shows fairly good agreement with the experimental results.

Stark spectroscopy (electronreflection spectroscopy) technique was applied to investigate the exciton transitions and charge transfer excitations in a SnPc polycrystalline film. A series of intermolecular charge transfer (CT) spectral bands was observed, which demonstrated the unique advantage and high sensibility of Stark spectroscopy in revealing weak CT transitions buried under strong Frenkel exciton bands. Photovoltaic action spectrum was measured for an ITO/SnPc/Al sandwiched device. The role which CT excitons played in photoconductivity was discussed.

Persistent spectral hole burning was realized at room temperature based on morphology-dependent resonances using polystyrene microparticle doped with nile blue dye as sample and a dye laser with line width of 0.01 nm as light source. Rate equations were solved to analyze dynamics of hole burning. According to the solutions and experimental results, effective hole-growing rate at different laser power were obtained. Further, multiplicity of hole burning was studied. This technique may be promising in the development of frequency domain optical-storage at room temperature in the future.