Diabetes is a complex illness requiring long-term therapy.Cyclocarya paliurus, a recently confirmed new food resource, shows significant hypoglycemic and hypolipidemic effects in type II diabetes. Triterpenoid saponins are considered as the effective medicinal components ofC. paliurusand are useful for the treatment of diabetes mellitus. However, little is known regarding their specific mechanism of actions. In this study, we used active ingredient screening and target prediction techniques to determine the components ofC. paliurusresponsible for its anti-diabetic effects as well as their targets. In addition, we used bioinformatics technology and molecular docking analysis to determine the mechanisms underlying their anti-diabetic effects. A total of 39 triterpenes were identified through a literature search and 1 triterpene compound by experiments. In all, 33 potential target proteins associated with 36 pathways were predicted to be related to diabetes. Finally, 7 compounds, 15 target proteins, and 15 signaling pathways were found to play important roles in the therapeutic effects ofC. paliurusagainst diabetes. These results provide a theoretical framework for the use ofC. paliurusagainst diabetes. Moreover, molecular docking verification showed that more than 90% of the active ingredients had binding activity when tested against key target proteins, and a literature search showed that the active ingredients identified had anti-diabetic effects, indicating that the results were highly reliable.

SIMOX SOI is quite attractive for IC technology because of its potential for high-speed and low power consumption. SOI wafers are required to maintain good electrical performances in the buried oxide (BOX) layers, thus it is imperative to study the electrical characteristics of the BOX layers and the interface states. C-V and I-V techniques are very frequently utilized for extracting the parameters of the Si-SiO2 interface in bulk-silicon MOS systems. In this paper, we use a new two-terminal MOSOS (metal-oxide-semiconductor-oxide-semiconductor) structure to study the electrical characteristics of SIMOX SOI wafers. Results gained from the comparison between the experimental curves and simulation curves are presented and analyzed. We show considerable improvement in comparison with results obtained using traditional methods.

In this work, the resonant response of piezoresistive double-clamped silicon nano-beam has been investigated. Conventional DRIE and KOH anisotropic etching were used to fabricate the 242 nm thick nano beam from doped (111) Si substrate. High energy argon ion bombardment was then applied on selected area of the top side of the nano beam to destroy the symmetry along thickness direction as atomic bonds were partly broken at top layer. The unbombarded layer underneath could maintain its piezoresistivity. The localized piezoresistor was used to study the resonant response of the double-clamped Si nanobeam in air and vacuum. The resonant frequency and Q-factor were obtained. Frequency shift to low end has been observed. The energy dissipation led by damaged atomic structure is discussed to explain the unexpected low Q factor.

We investigate the resonant response of piezoresistive double-clamped silicon nano-beam. On Si (111) substrate, double clamped nano beam with a thickness of 242nm has been fabricated by using KOH anisotropic etching and other conventional MEMS processes. High energy Argon ion bombardment was then applied on selected area of the top side of the nano beam. The asymmetry along thickness direction resulted from top layer with partly broken bonds and the remaining unbombarded layer demonstrates its local piezoresistivity. The localized piezoresistor was used in air to characterized the resonant response of the double-clamped Si nanobeam. The resonant frequence and Q-factor were obtained, which are 400 kHz and 7.9 respectively. The energy dissipation led by damaged atomic structure has been discussed to explain the unexpected much lower Q factor.

Carbon ions were implanted into p-Si (100) substrates by ion beam synthesis method with doses of 8.0×1017cm-2 and 9.0×1017cm-2 at about 700℃, followed by high temperature annealingat 1250℃for 5h in Ar. Composition and structure of the SiC buried layer were characterized by infrared reflective spectroscopy (IRRS), Rutherford backscattering (RBS) and high-resolution transmission electron microscopy (HRTEM). The results all prove the formation of good crystalline SiC buried layerand an epitaxial alignment with silicon substrates.

The structure of p-silicon implanted with 160keV carbon ions at target temperature 700'C and subsequent thermal annealing is studied by high-resolution transmission electron microscopy (HRTEM). Epitaxial, buried silicon carbide (SiC) layers are revealed by translation-type (111) Moire fringe and electron diffraction at SiC/Si interface. In addition, plenty of β-SiC precipitates free of strain with a diameter of about 5nm embedded in Si matrix. Several poly-type SiC exist in SiC/Si transition zone, also present in Moire fringes with Si. Regular Moire fringes show good alignment between SiC and the matrix. Heavily defected single-crystal silicon overlayer is near SiC buried layer, while the upper part is nearly free of any defects. The SiC/Sub Si interface is relatively smoother than top Si/SiC interface. The main defects in buried layer are stacking dislocations, crystal boundary, microtwins, and amorphous clusters. The segments of dislocations are almost along orientation. In SiC/Si transition zone, Si crystal lattice distortion occurs for 20% mismatch between SiC and Si. Implantation damage also causes Si amorphism. Besides hexagonal coherent precipitates, many irregular Moire patterns with spherical boundary present in Si bulk. The mechanism of all defects formation is discussed at the end.

SIMOX (separation by implantation of oxygen) is one of leading methods to synthesize SOI (silicon on insulator) wafers. Low-dose implantation is a growing interest method nowadays for the fabrication of SIMOX wafers since it shows great advantages such as high yield, high thermal conductivity and stronger radiation hardening compared to conventional standard full dose implantation. In this paper, we reported the formation of SIMOX-SOI at acceleration energies ranging from 160 to 100 KeV with doses of 4.5 and 5.5/spl times/10/sup 17/ cm/sup -2/, and consequently annealed at high temperature of 1324/spl deg/C in Argon+Oxygen atmosphere for 5 hours. The evolution of low-dose SIMOX wafers was characterized by RBS, XTEM, HRTEM and Secco, respectively. The results indicate that the optimum dose-energy window plays an important role for the formation of high quality SIMOX wafers with good crystals of top silicon, sharp Si/SiO/sub 2/ interface, high integrated buried oxide layer with minimum silicon island density.

主要报导了热解碳的氮离子注入处理、等离子体浸没离子注入及其血液相容性.用卢瑟福背散射、X射线衍射和喇曼光谱法分析样品的成份及结构.测试了注入前后热解碳样品的血小板粘附性能,经过注入处理的样品表面粘附较少的血小板,而且较少团簇及变形,优于临床应用的热解碳.蛋白质竞争吸附实验结果表明热解碳经PIII处理后,表面会吸附较多的白蛋白、较少的纤维蛋白原,具有更好的抗凝血性能.

Modified Secco technique is employed to detect the threading dislocation in low dose SIMOX wafers. It is found the implantation dose and the energy have remarkable influence on the quality of the top silicon layer. Lowest dislocation density of 104cm-2 is detected in the low dose SIMOX SOI wafer with optimized fabrication parameters. In addition, at the ion energy of 160keV, the lowest dislocation density is obtained at the optimized dose of 5.5×1017cm-2, while at the dose of 4.5×1017cm-2, the lowest dislocation density is achieved at the optimized ion energy of 130keV.

用 Secco法、 Cu-plating法分别表征了低剂量 SIMOX圆片顶层硅线缺陷、埋层的针孔密度 . 结果显示 , 低剂量 SIMOX圆片的顶层硅缺陷密度低 , 但埋层质量稍差 . 通过注入工艺和退火过 程的进一步优化 , 低剂量 SIMOX将是一种有前途的 SOI材料制备工艺 .

The structure development of buried oxide in low-dose separation of implanted oxygen wafers implanted at acceleration energies of 160, 130, and 100 keV was investigated by cross-section and high resolution transmission electron microscopy. The threading dislocation density in the superficial silicon layer was determined by Secco etching. The results indicate that the thickness of superficial silicon, the buried oxide (BOX) integrity, effective BOX thickness, Si/SiO2 interface, and threading dislocation density have a strong energy dependence. For the samples implanted at a dose of 5.5×1017 cm−2, the optimum energy is 160 keV, while at a dose of 4.5×1017 cm−2, it is 130 keV. The mechanism was discussed.

The structure of low dose SIMOX wafers is characterized by SIMIS,XTEM,HRTEM and Secco.The results indicate that low dose S IMOX wafers have good superficial silicon layer with low threading dislocation d ensity,uniform BOX with low silicon island density and a sharp Si/SiO 2 interf ace.It suggests that the low dose is one of the most promising SIMOX synthesis t echnologies.

Amorphous silicon nitride (Si3N4) film has outstanding electret properties and it is compatible with the micromachining technology, so it can be used in miniature microphone. But big tensile stress of Si3N4 film limits its application. In this paper, the improvement of mechanical property of Si3N4 film by boron ion implantation and its influence on the electret properties of the film is discussed. The results show that the boron ion plantation reduces the tensile stress of film effectively,but it also decreases the electret properties of the film. The capability of Si3N4 electret film against environmental conditions can be increased by chemistrical surface modification. Therefore, Si3N4 film may be used as a vibrating film. After the stability of charge storage is improved,it may be used as electret material for miniature microphones.

Some mutants of Streptomyces erythreus were obtained after implanted by nitrogen ions with energy from 40 to 60 keV and dose from 1 x 1011 to 5 x 1014 ions/cm2. The distribution fractions of mutants with higher erythromycin potency than the control had correlation with implantation dose. The colony shapes of mutants varied and the spore colors changed from gray white to green. Mutants with high erythromycin potency were found by screening with disc test after shake-flask fermentation. After implanted by nitrogen ions the erythromycin potency of Streptomyces erythreus increased about 20%. Compared with the mutation results by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing yield and wider mutation range. ESR test indicated that the free radical produced by ion implantation had little effect on biological effects. The direct action between ions and biological molecules resulted in biological effects. The mutation mechanism induced by ion implantation was also discussed.

The effects of N + implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spec|troscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N + implantation doping without any graphitization has been successfully realized when 100 keV N + ions at a dosage of 2×10 16 cm −2 were implanted into diamond films at 550°C. UV-PL spectra indicate that the implanted N + ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N + implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×10 18 N/cm 2 N + implantation into diamond films. Most of the implanted N + ions formed C≡N covalent bonds with C atoms. The others were free state nitrogen, which existed in the excessive nitrogen layers. C(1s) XPS studies show the existence of three different C(1s) bonding states, corresponding to graphite, i-carbon and the carbon of C≡N covalent bonding state, respectively, which agrees well with the Raman results.

> VISIBLE photoluminescence (PL) from nanostructured group Ⅳ semiconductors has attractedgreat attention, since visible PL at room temperature(RT) from porous silicon was discoveredby Canham in 1990. This makes it possible that the conventional planar technology of sili-con may be used in optoelectronics devices directly. Moreover, it is also an ideal object in

The ohmic contact properties of AuGeNi alloy and W thin film with Si+ implanted InP were described. It was found that the ohmic contact properties are good, while the specific contact resistance of Si+ and P+ implanted InP reduces dramatically in comparison with that of Si+ singly implanted InP. By Rutherford backscattering analysis, it was shown that there is interaction at the interface of W thin film and InP after annealing at 800��C.

本文对用多种离子束技术进行表面处理的金属间化合物Ni 3 Al（0.1B）进行耐腐蚀和抗氧化试验.结果表明,离子注入、离子束混合和离子束增强沉积对提高金属间化合物Ni 3 Al（0.1B）在水溶液中的耐腐蚀性能和在纯氧中的高温抗氧化行为都有很好的效果.

Ion implantation, ion beam mixing, and ion beam enhanced deposition (IBED) were employed to improve oxidation resistance of intermetallic compound Ni3Al(0.1B) in pure flowing oxygen at temperature of 1100 K. X-ray diffraction and scanning electron microscopy were used to examine the composition and structure of the scales after oxidation. Improved resistance to oxidation of Ni3Al(0.1B) was observed in Ta+-implanted, ion beam mixed Si layers, and IBED films coated specimens. The possible mechanisms for these effects were discussed.

Ion beam induced electrical conduction of ion implanted polyimide film could find potential applications for encapsulation of microelectronic devices and gate-transistor fabrication. One of the important problems to be solved is the shrinkage effect of polyimide film under ion beam irradiation. In this work the shrinkage effects of B+-implanted polyimide film under different implantation conditions were investigated by using different techniques (IR reflection interference spectra, surface profile measuring system, and automatic spreading resistance measurements). According to the previous results of ASR measurement a multilayer model of the implanted polyimide film was proposed for the computer simulation of infrared reflection interference spectra. The shrinkage and depth profile of the refraction index of the implanted polyimide films will be discussed.