Titanium nitride films have been synthesized at room temperature by alternate deposition of titanium and bombardment by nitrogen ions with an energy of 40KeV. The component depth profiles and the structure of titanium nitride films were investigated by means of RBS, AES, TEM, XPS and X-ray diffraction. The results showed that titanium nitride films formed by ion beam enhanced deposition (IBED) had columnar structure and were mainly composed of TiN crystallites with random orientation. The oxygen contamination in titanium nitride films prepared by IBED was less than that of the deposited film without nitrogen ion bombardment. It was confirmed that a significant intermixed layer exists at the interface. The thickness of this layer was about 40 nm for the film prepared on iron plate. The mechanical properties of the film have been investigated. The films formed by IBED exhibited high hardness, improved wear resistance and low friction.

The biggest drawback of the widely application of SIMOX-SOI material is the low yield and the high cost which mainly due to the long implantation time by conventional beamline implanter. An implanter without an ion mass analyzer is used to fabricate SOI materials by H2O+, HO+, and O+ ions implantation using water plasma. Based on the consideration that the masses of the three ions of are quite close, their depth profiles in as-implanted wafers will not disperse much, which makes it possible for the formation of a single buried oxide layer by choosing the appropriate energy and dose. The results show that it exits a dose window at fixed implantation energy to form desirable thin or ultra-thin SOI structure with the buried oxide layer free of silicon islands. Compared to conventional SIMOX method, the sample implanted at the same dose and energy has thicker BOX layer. This probably caused by the heavy oxygen damaged region with hydrogen-induced defects in as-implanted wafer appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high-temperature annealing process.

Total-dose irradiation responses of HfON and HfO2 dielectric films were studied with their MIS structures and under 10keV X-rays. The flatband voltage shifts of HfON MIS structures are much smaller than HfO2 MIS structures under different total-doses up to 30 kGy(Si). The influence of the added nitrogen element on total-dose irradiation tolerance of Hf-based dielectric films was also discussed.

心脏瓣膜病严重威胁人类健康. 植入人工心脏瓣膜是挽救此类病人生命的可靠途径. 全世界已超过200万例植入了热解碳人工心脏瓣膜. 但人工心脏瓣膜植入体内后的凝血问题是国际医学界的一大难题. 本文综述报道用离子束技术对人工心脏瓣膜材料进行表面处理以改善其血液相容性及使用安全性的研究结果.

CH_4+Ar plasma were implanted into p-Si (100) substrates by C~+ ion implantation with a dose of (5.0×10~(17) cm~(-2)) at about 700 °C, followed by high temperature annealing at 1 250 °C in Ar for 5 h. The formation of discrete polycrystalline SiC buried layer was substantiated by Infrared reflection spectroscopy (IRRS), glanced-angle x-ray diffraction (GAXRD) and cross-section transmission electron microscope (XTEM).

Heart valve diseases threaten human health. One reliable way to save lives of such patients is to replace the pathologically changed heart valves by artificial ones. Over 2 million patients have received LTI-carbon heart valve’s implantation. However, the thrombosis after the implantation is one of the difficulties that need to be solved. In order to improve the blood compatibility and security of mechanical heart valves, ion beam technology was used to modify the surface properties of the materials. The investigation results have been summarized in this paper.

Electron emission from grid is a serious problem for it limits the service time and destroys the working condition of the traveling wave tubes. After coating carbon films on the surface of the control grid by ion beam en- hanced deposition (IBED) in our laboratory, the electron emission from control grid was suppressed. One of the trav- eling wave tubes with control grid treated with coating carbon film already had a service time more than 1000 h. This technology has already been used in defense and aviation field successfully. The preparation and properties of two kinds of carbon films-diamond like carbon and graphite like carbon, their applications and mechanism for suppression of electron emission are presented in this paper.

Hafnium oxide films were grown on SOI (silicon-on-insulator) materials by electron beam evaporation of HfO_2 target and followed by rapid annealing in nitrogen (600℃, 300s). In order to study the change of composition and structure of the samples before and after annealing, glancing-angle X-ray diffraction (GAXRD), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscope (HRTEM) were used to investigate the samples. Analysis results showed that hafnium oxide films became polycrystalline phase in monoclinic structure from amorphous phase and the O/Hf ratio approached to stoichiometric proportion, i.e., 2 after annealing. In the end, spreading resistance profiles (SRP) showed excellent dielectric properties for hafnium oxide films whenever amorphous or polycrystalline.

为了得到CeO2为埋层的新型SOI(Silicon On Insulator)材料,采用电子束蒸发沉积及后期退火处理的方法制备得到了高度(111)、(311)晶体取向的CeO2薄膜,为进一步外延制备SOI材料打下了良好的基础.同时,从热力学角度就退火对CeO2薄膜晶体取向的影响机理进行了初步的探讨.由于CeO2(11)、(311)面为密排面和次密排面,在结晶化过程中所需克服的能垒最低和次低,所以,退火后形成了(111)、(311)结构的CeO2薄膜.

SOI material plays an important role in the low-power, low-voltage IC technology. Its biggest drawback is high cost which mainly due to the long implantation time by conventional beamline implanter. An implanter without ion mass analyzer is applied to fabricate SOI materials by water ions implantation using pure water source. The masses of three dominant ion species in water vapor plasma, H/sub 2/O/sup +/, HO/sup +/, and O/sup +/, are very close which overcome the problem of co-existence of O/sup +/ and O/sub 2//sup +/ by oxygen plasma source. XTEM, HRTEM, EDXS, and SIMS results show a thin SOI is successfully fabricated by the implanter using 90 keV water ions implantation with dose ranges from 3/spl sim/6.5/spl times/10/sup 17/ cm/sup -2/ and subsequently high temperature annealing. The interfaces of Si/SiO/sub 2/ are smooth and sharp. The main metallic contamination comes from filament-tungsten, which congregate around the interfaces of the top Si layer.

Hf films were synthesized by ion beam assisted deposition(IBAD). The influence of ion bombardment during deposition on the preferred orientation of films was studied. Hf film grains exhibit preferred (110) orientation when the growing film is bombarded by 500 eV Ar~+ions at an incident angle of 75° and a current density of 0.9 A/m~2. When the current density is beyond 1.2 A/m~2, the Hf films exhibit mixed (002) and (100) orientation and which is not concerned with the ion incident angle. The reason for the preferred orientation of Hf film was discussed. It is considered that the preferred orientation of Hf films does not simply depend on the channeling effects of ions, or the grain surface energy, but it is the result of mutual competition and actions of several factors, which influences the crystallographic orientation of thin films in the non-equilibrium growth conditions.

主要报导了热解碳的氮离子注入处理、等离子体浸没离子注入及其血液相容性.用卢瑟福背散射、X射线衍射和喇曼光谱法分析样品的成份及结构.测试了注入前后热解碳样品的血小板粘附性能,经过注入处理的样品表面粘附较少的血小板,而且较少团簇及变形,优于临床应用的热解碳.蛋白质竞争吸附实验结果表明热解碳经PIII处理后,表面会吸附较多的白蛋白、较少的纤维蛋白原,具有更好的抗凝血性能.

采用无质量分析器的离子注入机,以低能量低剂量注水的方式代替常规SIMOX注氧制备SOI材料.测试结果表明,此技术成功地制备了界面陡峭、平整,表层硅单晶质量好的SOI结构材料.在剂量一定的条件下,研究不同注入能量对SOI结构形成的影响,使用剖面透射电镜技术(XTEM)和二次离子质谱技术(SIMS)等测试方法对注入样品和退火后样品进行分析.结果表明,表层硅厚度随注入能量增大不断增大;埋层二氧化硅厚度相对独立,仅在超低能(50keV)低剂量情况下厚度出现明显降低;埋层质量(包括界面平整度、硅岛密度等)与注入能量变化相关.

Separation by plasma implantation of oxygen (SPIMOX) was developed to fabricate silicon-on-insulator (SOI) wafers based on separation by implantation of oxygen technology, however, it suffers from the coexistence of O+ and O2+ ions in the oxygen plasma, which gives rise to nonuniformity of the formed buried oxide layer. In the present work, water plasma was used as a source of oxygen (H2O+, HO+, and O+) for achieving small spread in the oxygen implant depth profile. The feasibility of SPIMOX with water plasma to form SOI wafers was explored at an ion implanter without mass separator. Cross-sectional transmission electron microscopy revealed that a uniform buried oxide layer was formed under a single crystal silicon overlayer with the present process. The interfaces between the silicon overlayer, buried oxide layer, and bulk silicon were smooth and sharp. An implant dose window has been identified for producing a desirable SOI structure.

Thin film synthesis and applications using ion beam technology at Ion Beam Laboratory,Chinese Academy of Sciences,were reviewed.The results of surface modification of materials prepared by Ion Beam Assisted Deposition (IBAD), Filtered Arc Deposition (FAD) and Silicon－ On－ Insulator (SOI) by ion implantation were reported. The industrial and military applications of ion beam technology were dicussed as well.

A layer of titanium oxide layer was coated on low temperature isotropic pyrolytic carbon (LTI-carbon), a prevailing material used for artificial heart valves' fabrication, by ion beam enhanced deposition (IBED). Glancing angle x-ray diffraction (GAXRD), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and transmission electronic microscopy (TEM) were used to characterize the deposited titanium oxide layer. The results show that the layer is polycrystalline with TiO, Ti2O3 and TiO2 coexisting and the root-mean-square (RMS) roughness of the surface is measured to be 8.7 nm. Platelet adhesion experiments show that the adherent platelet on titanium oxide layer is about four times less than that on LTI-carbon. In vivo investigation was performed by implanting LTI-carbon and a titanium oxide layer coated LTI-carbon into the femoral artery of a dog for 4 weeks. By means of scan electron microscopy, coagulation, fibrin, deformed blood red cells and aggregation of adherent platelet were found on the surface of the uncoated LTI-carbon, whereas, nothing but a few normal-shaped blood red cells were found on the titanium oxide coated LTI-carbon. It can be concluded that titanium oxide coated LTI-carbon has a much better blood compatibility than that of the LTI-carbon.

用离子束增强沉积 （IBED）方法 :即在氧气氛中 ,通过惰性气体Xe+离子轰击和Ti的电子束蒸发进行了氧化钛薄膜的合成 .X射线衍射分析表明 ,用离子束增强沉积技术合成的薄膜为金红石结构 ,具有 （ 10 0 ）择优取向 .用背散射技术分析了薄膜的成分 ,发现薄膜的O/Ti基本上接近 2∶1.薄膜中含有一定量的Ti2 +和Ti3+.体外试验及动物体内试验结果表明 ,金红石型氧化钛薄膜具有比目前临床应用的热解碳更好的血液相容性 .并认为 ,金红石型氧化钛覆膜热解碳极可能成为新的人工心脏瓣膜材料 .

Titanium oxide films were prepared by ion beam assisted deposition (IBAD), where the films were synthesized by depositing titanium atoms and simultaneously bombarding with an Xe/sup +/ ion beam at an energy of 40 keV in an O/sub 2/ environment. The results show that titanium oxide films exhibit rutile type structure with [100] orientation. The surface energy of titanium oxide and titanium films prepared by IBAD were measured by the contact angle method. The results show that titanium oxide films with [100] orientation exhibit surface energy with dispersion component, /spl alpha/=5.79 (dyne/cm)/sup 1/2/ and polar component, /spl beta/=2.94 (dyne/cm)/sup 1/2/. The protein adsorption properties on low temperature isotropic pyrolytic carbon (LTI-carbon) and titanium oxide films with [100] orientation were studied by the radioisotope labeling method. The results show that there are less human fibrinogen (HFG) adsorbed on the surface of titanium oxide films between adsorbed HFG and proteins in solutions. In HSA/HFG (human fibrinogen) binary system, less HFG is adsorbed on titanium oxide films. The relationship between adsorption and surface energy was discussed. It can be concluded that the titanium oxide films with [100] orientation are better than those of LTI-carbon from a blood compatibility point of view.

Titanium oxide films were synthesized by ion beam enhanced deposition, where the films were prepared by depositing titanium atoms and simultaneously bombarding with Xe(+) ions at an energy of 40 keV in an O(2) environment. The titanium oxide films exhibit rutile-type structure with (100) orientation and the O/Ti ratio is about 2:1. Ti(2+), Ti(3+) and Ti(4+) coexist in the films.In vitro andin vivo investigations were used to investigate the blood compatibility of titanium oxide films. The results show that the blood compatibility of rutile-type titanium oxide fi is better than that of low temperature isotropic pyrolytic carbon (LTI-carbon), which is widely used to fabricate artificial heart valve. It is thought that rutile-type titanium oxide coated LTI-carbon most probably becomes new biomaterial to fabricate artificial heart valves.