CN1 thin films have been synthesized by ion-beam-assisted laser ablation of graphite. Films with N-concentration of 45% are obtained, indicated by high energy backseattering spectrum (HEBS). Raman and X-ray photoelectron spectroscopy (XPS) data confirm the existence of carbon-nitrogen bonds. Polycrystallites beta-CjNi structure has been detected in the amorphous matrix of the films, as indicated by transmission electron microscopy (TEM) and electron diffraction. Qualitative tests indicate that the films are relatively hard and adhesive.

Carbon nitride films have been formed on Si(100) substrates by laser ablation of graphite under a low energy nitrogen ion beam bombardment. Data of Raman shift and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. Time-of-flight measurements suggest the existence of paracyanogen-like materials, such as C4N4, in the films. High energy backscattering spectrometry has shown that the percentage of N content in the film is 41% or so. The x-ray diffraction and transmission electron micrograph measurements have also been taken to characterize the crystal properties of the obtained films. Qualitative tests indicate the films of high Vickers hardness H(v), and of good adhesion to the silicon substrates.

Deposition of CN(x) thin films on Si(111) has been performed by laser ablation of graphite under a low-energy nitrogen ion beam bombardment. Films with a maximum N-concentration of 34% are obtained. The N species is found to be relatively constant along the depth of films. X-ray spectroscopy data confirm the existence of covalent C - N bonds. Nanocrystallites structure has been detected in the amorphous matrix of the films. Qualitative hardness tests indicate that the films are relatively hard and adhesive.

The adhesion enhancement of Ag or Au films on Ta (with native oxide) and Ta2O5 (anodic oxidation) interfaces by bombarding with 1.5–18 MeV Si ions at both room temperature (RT) and low temperature (LT) (170 K) has been studied. The threshold doses Dth for these systems to pass the Scotch tape test at RT as a function of ion electronic stopping power dEdX were measured. The power law Dth ∞ (dEdx)n with various magnitudes and n values were observed for all these systems. SIMS measurements showed MeV ion-induced migration of silver into the tantalum substrate for the irradiated Ag/Ta and Ag/Ta2O5 systems. Significantly increased threshold doses were observed for samples irradiated at LT except for the Ag/Ta2O5 interface, which indicated that possible bonds between silver and oxygen atoms formed during MeV ion bombardment may inhibit the further migration of silver into the substrate. The preliminary results about Dth as a function of the thickness of the ultrathin silicon native oxide on Ag/SiOx/Si and Au/SiOx/Si systems showing the different behavior in adhesion enhancement between Ag and Au films are also compared and discussed.

The MeV proton non- Rutherford elastic backscattering (PEBS) has been used to measure a variety of low Z element- containing samples including thick SiC film, N implanted stainless steel, thin films interface (Ag on Cu) and very deep (4μ m) SOI structure by high energy oxygen implantation. It is demonstrated that by using the significant enhancement of cross sections for low Z elements and selecting the proper energy region of the excitation curves both the sensitivities for detecting low Z elements and the accessible depth of the PEBS technique are remarkablely improved over the ordinary RBS method. The disadvantages of the PEBS as compared with RBS as well as high energy He elastic backscattering (HeEBS) are also discussed.