The MeV proton non- Rutherford elastic backscattering (PEBS) has been used to measure a variety of low Z element- containing samples including thick SiC film, N implanted stainless steel, thin films interface (Ag on Cu) and very deep (4μ m) SOI structure by high energy oxygen implantation. It is demonstrated that by using the significant enhancement of cross sections for low Z elements and selecting the proper energy region of the excitation curves both the sensitivities for detecting low Z elements and the accessible depth of the PEBS technique are remarkablely improved over the ordinary RBS method. The disadvantages of the PEBS as compared with RBS as well as high energy He elastic backscattering (HeEBS) are also discussed.

本文介绍用γ共振吸收法测量 28 Si、 24 Mg和 40 Ca三个核素部分高激发态能级寿命的实验结果,并对γ共振吸收法作了评述。

In order to explore the Jπ=1+; T=1 states in 40Ca between 11.0 and 12.0MeV, which have been predicted recently, the measurements of the 39K(p,γ)40Ca reaction have been taken. Nine-resonances appeared in the region Ep=2.7-3.8MeV, and six of them corresponding to Ep=2749, 3085, 3135, 3202, 3417 and 3708ke were observed for the first time with the (p,γ) reaction. The spin, parity and isospin of the 11.083MeV state in 40Ca are determined to be Jπ=1+; T=1. The M1 transition strength B(M1)uparrow- of this state from the ground state is 0.24μ02. The result is qualitatively in agreement with the the oretical prediction.