The efficiency of the algorithm for the numerical solution of the Schrödinger torsion equation in the basis of Mathieu functions has been considered. The computational stability of the proposed algorithm is shown. The energies of torsion transitions determined in the basis sets of plane waves and Mathieu functions have been compared with the results of spectroscopy. A conclusion about the applicability of the algorithm using the basis set of Mathieu functions to the solution of the Schrödinger equation with a periodic potential has been derived.

In this paper, a new approach to combined 2D printing of local layers of different materials on the same set up have been considered. A three-coordinate moving system has been developed, equipped with a heated table, a system for supplying precursors and gas to the printing zone, as well as a printing device with three print heads: inkjet, e-jet and aerojet. The advantages and disadvantages of these methods are discussed on the specific examples. It was shown that the methods have various resolution (e-jet - 2 μm, aerojet - 5 μm, inkjet - 7 μm). Moreover, the restrictions imposed on the printing method of higher resolution can be overcome using another method. Thus, a combination of these methods in one process will allow the formation of multilayer functional elements.

The article proposes a new method of the formation of memristor structures based on the oxides, sulfides and selenides to perform basic arithmetic operations. Moreover, was proposed an approach to control the resistance of a memristor. The proposed schemes are characterized by simplicity, and can be compactly implemented in integral design.

The procedure of the numerical solution of the Schrödinger torsion equation in matrix form in the planar wave basis set was considered. The concept of the largest level number that has reached the variation limit for a given number of basis functions was introduced as a quantitative measure of the basis efficiency. The rate of convergence to reliable values of levels and transitions has been studied. The problem of the maximum possible energy level number computed with the required accuracy for a given basis size has been solved. It was demonstrated that the number of levels that have reached the variational limit has linear relationship with the number of basis functions, and the angular slope coefficients of such dependencies are quite close to each other and equal to roughly 0.96. This allows prediction of the accuracy of the calculation method and conscious choice of the basis power.

In this paper, the study of the dynamic pyroelectric effect under different powers of modulated heat flux in deuterated triglycine sulfate (DTGS) near the Curie point is presented. It was found that pyroelectric coefficient was essentially dependent on the power of the modulated radiation, especially in the phase transition region. It is shown that a tertiary pyroelectric effect makes an additional contribution to the pyroelectric response observed in TGS group crystals near phase transition region. The tertiary pyroelectric effect is caused by a nonuniform distribution of piezoelectric coefficients in the samples as a result of temperature gradient presence.

Рассмотрена погрешность алгоритма аппроксимации функций Матье рядами Фурье, когда коэффициенты ряда Фурье представлены сходящимися цепными дробями. На основании проведенного анализа получены рекуррентные соотношения для абсолютной и относительной погрешностей удерживаемых звеньев цепной дроби и коэффициентов фурье-разложения. Предложен метод оценки точности расчета элементов матрицы гамильтониана торсионного уравнения Шрёдингера в базисе функций Матье. Эффективность предложенного алгоритма подтверждена численными примерами The dependence for the Hamiltonian matrix elements of the Schrodinger torsion equation on the calculation errors of the Mathieu basis set is considered. The Mathieu functions are represented with continued fractions in this study. The analysis of the Mathieu function approximation algorithm using Fourier series expansion is carried out when the coefficients of the Fourier series are represented by convergent continued fractions. It is shown that the major contribution to the errors at the Fourier coefficient calculation is made by the error accumulating in the corresponding elements of the continued fraction. Recurrence relations for the absolute and relative errors of the kept elements of the continued fraction and the Fourier expansion coefficients are obtained. It is shown and illustrated by a numerical example that the absolute and relative errors of the Fourier expansion coefficients in the proposed algorithm are negligible. It is noted that the maximum relative errors of continued fraction are in the highest elements of the kept part.The results of our work are used to estimate the calculation error in the integrals containing Mathieu functions. These integrals constitute the Hamiltonian matrix elements of the Schr¨odinger torsion equation. We developed an algorithm to estimate of the calculation accuracy of the Hamiltonian matrix elements of the Schr¨odinger torsion equation in the basis set of Mathieu functions. We provide the example of this algorithm. The results of the work indicate the adequacy and effectiveness at the application of the Mathieu function basis set to the solution of the Schrdinger torsion equation.¨

The barrier properties of a capacitor heterostructure based on a ferroelectric lead zirconate-titanate were investigated by using the methods of current-voltage and voltage-capacitance characteristics. The variable values of the potential barrier on the PZT-Pt interface were determined by the C-V method (from 0.5 to 1.6 eV) and the I-V method (from 0.5 to 0.7 eV). The spontaneous polarization influence on the potential barrier at the PZT-Pt interface was estimated.

In this paper, comprehensive investigation of the pyroelectric properties and local piezoelectric response in ferroelectric film heterostructures is presented. The pyroelectric effect is determined by the dynamic method and the pyroelectric response is recorded for further analysis. It is shown that such studies are effective to analyze the self‐polarization phenomena, the stability of the polarized state, the determination of the ferroelectric phase fraction in the film structures, the characterization of grains with in‐plane and out‐of‐plane polarization and others. For example, thin film samples of ferroelectric LiNbO 3 deposited by magnetron sputtering on silicon substrates are considered. The measurement results show that a part of the crystal grains (about 30%) in these films possessed the out‐of‐plane polarization directed from the free surface to the substrate and determined the peculiarities of the pyroelectric response and the vertical component of the local piezoelectric response.

Развитые технологии КМОП-структур и энергонезависимая память на их основе столкнутся с фундаментальными ограничениями уже в 2018-2020 гг.В настоящее время проводится интенсивный поиск приборов на основе новых физических принципов, которые потенциально будут иметь более высокую степень интеграции.В качестве таких приборов предлагается использовать мемристоры

The computer simulation results of physicochemical process of nanopore formation in aluminum and titanium oxides are presented in this paper. The model based on an electric field distribution in an electrochemical cell takes into account oxide formation and dissolution reactions on metal-oxide and oxide-electrolyte boundaries, respectively. Such an approach allows to describe geometric characteristics dependences of the nanostructured oxide layers on electrophysical and chemical parameters throughout the formation process. The experimental results confirm the proposed model validity.

The article dwells upon theoretical considerations on the nature of probe local anodic oxidation. The concept of the process presented here allows for the device intrinsic amperage limitations in the tip-sample system. The work also demonstrates characteristics of height-modulated dielectric mask formation on the solid-state surfaces.

Physics, Chemistry and Applications of Nanostructures, pp. 399-401 (2015) No AccessAFM PROBES FORMATION BY EXPOSURE OF THE DEFOCUSED ION BEAMA. N. BELOV, Yu. A. CHAPLYGIN, S. Yu. KRASNOBORODKO, and V. I. SHEVYAKOVA. N. BELOVNational Research University of Electronic Technology, 4806-th street 5, Zelenograd, Moscow, Russia, Yu. A. CHAPLYGINNational Research University of Electronic Technology, 4806-th street 5, Zelenograd, Moscow, Russia, S. Yu. KRASNOBORODKONational Research University of Electronic Technology, 4806-th street 5, Zelenograd, Moscow, Russia, and V. I. SHEVYAKOVNational Research University of Electronic Technology, 4806-th street 5, Zelenograd, Moscow, Russiahttps://doi.org/10.1142/9789814696524_0098Cited by:0 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail Abstract: The method we present enables the simultaneous sharpening of silicon cantilevers tips placed on 200-mm diameter Si substrates. FiguresReferencesRelatedDetails Physics, Chemistry and Applications of NanostructuresMetrics History PDF download

A copper sulfide and bismuth sulfide thin films were deposited on Si/Ti substrate by successive ionic layer adsorption and reaction method at room temperature, using cupric chloride, bismuth chloride, complexing Na(2)EDTA and sodium sulfide aqueous solutions as precursors. The surface morphology, structural and electrical properties of the as-deposited films were investigated by scanning electron and atomic force microscopy, energy dispersive X-ray analysis (EDS), and 2-point probe methods. The films were found to be amorphous, rough with thickness 30 nm and 20 nm for CuSx and BiSx, respectively. Average atomic percentage of Cu:S and Bi:S in the as-deposited films was calculated as 1:1.5 and 2.3:3. It was noted that films possess resistive switching behavior. Ionic conductivity of the CuSx film was found to be 25,8.10(-3) Ohm(-1).cm(-1). Ionic conductivity of the BiSx film was found to be 16.10(-3) Ohm(-1).cm(-1). Set voltages U-ON defined by I-V curves were found to be in the range 0,75-0,8 V/cm for both films. Reset voltages U-OFF were found to be in the range 0,6-0,7 V/cm for both films. Thus, formed films can be used as active layers for memory devices application.

We propose approach for modeling thin aluminum film anodization in three dimensions using variation of coupled lattice map on volumetric grid, which is capable of capturing porous and nonporous aluminum oxide growth and electrochemical polishing modes. Model derivation is based on Parkhutik and Shershulsky understandings. Numerical simulation results for various initial conditions are shown and compared to experimental data.

On the basis of the integral equation theory, we examine spatial correlations of flexible polymer chains dissolved in an ionic liquid. The effect of the concentration of a polymer on its structural properties is studied for different lengths of the nonpolar tail of the solvent cation. The structure of a polymer-containing ionic liquid is analyzed in the reciprocal space on the basis of calculated partial structure factors. In a wide range of polymer concentrations, for all the selected values of length of the cationic nonpolar tail, long-range liquid ordering and intermediate-range liquid ordering of polymer chains are observed. The dependences of the characteristic scale of ordering of macromolecules on their number density in solution are different for ionic liquids with different lengths of the cationic nonpolar tail.

Nanowires of various metal were embedded into porous anodic alumina by pulsed electrodeposition. Pores of alumina were filled with Cd, Zn, In, Cu, Ag, In, Ni, Co, Sri, Pb by ac electrochemical preparation while the alumina layers remained on the Al-substrate. Deposited metal wires were characterized by atomic force, scanning electron microscopy and Auger-spectroscopy.