针对电容薄膜真空计的电容检测精度要求高以及非线性的问题,文中设计了一种基于二极管桥的检测电路.该电路检测电容薄膜真空计的测量电容与参考电容的差值,能有效抑制共模噪声的干扰,并采用负反馈的方法对非线性进行补偿.仿真表明负反馈的方法能够有效降低真空计的非线性,在仿真数据上非线性度从7.27％降低到0.662％.实际测试结果表明该电路能准确地检测电容,电路灵敏度为1.85 V/pF,非线性度为0.4％,电路稳定性较好.

Due to the dopant re-diffusion caused by annealing process of the traditional rapid thermal process (RTP),the shallow junction devices cannot be fabricated easily.The annealing was carried out by the microwave annealing to effectively reduce the thermal budget and solve the problem of dopant re-diffusion.Compared to the traditional RTP annealing,the microwave annealing has thermal microwave effect and non-thermal microwave effect,which can realize impurity activation and lattice restoration at low temperature.The experiments show that when the implantation energy and implantation dose are 15 keV and 1 × 1015 cm-2 respectively,the average square resistance and non-uniformity of the implanting p31 samples annealed by the microwave annealing are less than 200 Ω/□] and less than 3 ％ respectively,and the highest annealing temperature is only about 400 ℃C.The thermal budget of the microwave annealing is far lower than the traditional RTP annealing.The experimental results show that the microwave annealing method has great potential in the preparation process of the shallow junction devices.

针对半导体工艺中去离子水的表面张力导致显影干燥过程中光刻胶纳米线条容易发生倒伏的问题,采用了微波干燥方法,以抑制光刻胶纳米线条倒伏.利用微波的热效应和非热效应,降低去离子水的表面张力,使光刻胶纳米线条上的去离子水均匀、快速地蒸发,有效抑制了光刻胶纳米线条的倒伏.与氮气干燥处理的传统方法相比,该方法能使高130 nm、宽15 nm的光刻胶纳米线条不发生倒伏,效果明显.这表明,该方法是可行和有效的.

The traditional two-phase flow cleaning method combined deionized water with high-purity nitrogen has some deficiencies in the removal of the particle contaminants on CMOS image sensors.To solve this problem,the CMOS image sensor was cleaned by the nozzle-typed supercritical carbon dioxide (SSCO2) cleaning method.Compared with the traditional water-nitrogen two-phase flow cleaning method,the SSCO2 cleaning method has the unique properties,such as low surface tension,high solubility and diffusivity.The experiment result shows that the particle contaminants with a diameter of more than 300 nm from pixels and between pixels in the CMOS image sensors are effectively eliminated by the nozzle-typed SSCO2 cleaning method.Compared with the traditional two-phase flow cleaning method,the cleaning effect of this method is improved obviously.The experiment shows that this method has a good application prospect in cleaning of CMOS image sensors.

The purity evaluation of deionized (DI) water is highly desirable for VLSI or ULSI industry, as the traditional "reverse osmosis filter" cannot always meet the requirement towards the DI water. The filtered DI water may still contain many contaminations which are not up to the standard for the wet cleaning of wafer surface. A novel method is presented by analyzing the residues of a water droplet after the low-temperature evaporation. The contamination contained in the water will remain during the gasification. By analyzing the residual contamination's morphology, the purity of the DI water can be estimated by employing merely a 3D laser microscope. Compared to the traditional fluorescence detecting system for water quality monitoring, it is simpler and has a lower cost. The paper describes an excellent water detection method which is meaningful for preparing ultra-pure water. Experimental results have shown that the deionized distilled (DID) water can repeatedly get a higher purity using this detection method. The DID water can be applied to the wet cleaning of wafer surface, preparation of chemical reagents and many other aspects.

针对显影工艺中水的表面张力导致的高高宽比抗蚀剂图形的坍塌及黏连,提出了一种基于微波加热的干燥技术来有效改善纳米抗蚀剂图形的干燥效果。该方法利用微波穿透光刻胶结构直接加热光刻胶图形间隙中残存的去离子水,水分子吸收微波的光子能量迅速蒸发,从而有效地抑制光刻胶图形的坍塌与黏连现象。利用提出的基于微波加热的干燥方法,成功获取了高260nm、宽16nm的光刻胶线条组和直径为20nm的光刻胶柱形阵列,其中高高宽比线条组和由15 625根柱子组成的柱形阵列结构没有出现坍塌及黏连情况,验证了在微波产生的交变电场作用下,可以减小水分子团簇,降低水的表面张力。

A novel method based on electromagnetic wave (EW) was firstly proposed to dry photoresist with high aspect ratio after electron beam lithography. This method used EW to penetrate photoresist and heat the water stored between resist patterns directly, then the water evaporated with absorbing energy of EW. An array of 15,625 pillars and lines with 14.9 nm width of aspect ratio 13 and 17 respectively were dried successfully. By analyzing the heating mechanism, we demonstrated that the EW can decrease surface tension of water effectively and may be applicable for cleaning via hole and the inner wall of carbon nanotubes.

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

Zinc oxide thin films deposited on glass substrate at 150°C by atomic layer deposition were annealed by the microwave method at temperatures below 500 °C.The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence.The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films.The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass.

With the drastic shrink of the semiconductor technology node,the limitations and shortcomings of traditional RCA cleaning methods are introduced briefly,and then the carbon dioxide snow jet cleaning as a novel cleaning technology for cleaning process is discussed.Based on the special physical properties of carbon dioxide,the mechanisms of dry ice micro-particle formation as the carbon dioxide passes through an orifice are discussed,and the carbon dioxide snow jet cleaning mechanisms for the particle and organic pollutants are analyzed briefly.Then the self-made semiconductor cleaning equipment based on the carbon dioxide snow jet cleaning was introduced,and the structure of the equipment and the function of each part were discussed.Besides that,the process flow of cleaning the silicon wafer with the equipment was presented.The contrast experiment shows that the equipment has a very good effect of silicon wafer cleaning when the gas pressure of the carbon dioxide source is 8 MPa,carbon dioxide with the purity of 5N is used as the gas source,and the pressure parameter before the orifice is set to 11 MPa.

Multi-layer graphene (MLG) films have been deposited on nickel film employing chemical vapor deposition (CVD) technique and oxygen plasma-based treatment method is introduced to tune the properties of MLG films after the transfer process. A MLG of 32nm (~90 layer) was reduced to 12nm (~30 layer) in 60s with sheet resistance of 550 Ω/□ and transmittance of 83%. The geometrical dimensions, optical transmittance and sheet resistance evolution of the films during the treatment process are investigated. The method suggested in this paper yields controllability of the MLG film thickness and the electrical and optical properties after the transfer process and device fabrication, which has great potentials for transparent conductive electrode applications.

The spectroscopy is the ultimate way for chemical analysis. This paper mainly describes the idea of an air-sensitive sensor based on MEMS technology, and more over, a photonic crystal (PC) beam splitter was designed, which can achieve high resolution beam steering, and this improves the resolution of the sensor. The paper offers a new idea and lays the foundation for the novel beam splitter that applied to many optical systems.

A novel wet vapor photoresist stripping technology is developed as an alternative to dry plasma ashing and wet stripping. Experiments using this technology to strip hard baked SU-8 photoresist, aurum and chromium film are carried out. Then the images of stripping results are shown and the mechanism is analyzed and discussed. The most striking result of this experiment is that the spraying mixture of steam and water droplets can strip photoresist and even metal film with ease.

During the forming process of the free-standing structure or the functional cavity when releasing the high aspect ratio sacrificial layer, such structures tend to stick to the substrate due to capillary force. This paper describes the application of pull-in length conception as design rules to a novel 'dimpled' method in releasing sacrificial layer. Based on the conception of pull-in length in adhering phenomenon, the fabrication and releasing sacrificial layer methods using micro bumps based on the silicon substrate were presented. According to the thermal isolation performances of one kind of micro electromechanical system device thermal shear stress sensor, the sacrificial layers were validated to be successfully released.

The multi-SCCO2 (supercritical carbon dioxide) release and dry process based on our specialized SCCO2 semiconductor process equipment is investigated and the releasing mechanism is discussed. The experiment results show that stuck cantilever beams were held up again under SCCO2 high pressure treatment and the repeatability of this process is nearly 100%.

A novel electromagnetic push-pull RF MEMS switch was proposed.In order to solve the problems caused by traditional electrostatic cantilever RF MEMS switches,such as high actuation voltage and low recovery force,a new push-pull structure was designed to reduce the actuation voltage(current)and increase the isolation.The designed RF MEMS switch realized the SPDT function.The beam distortion induced by the residual stresses in the cantilever beam was solved due to the single crystalline silicon beam without stress.The dimension of the switch was designed based on theoretical analysis and Finite Element Analysis(FEA).10 μm displacement at the free end of the single crystalline silicon beam was obtained at dB/dz=100 T/m magnetic-induction gradient of the outside permanent magnet and 100 mA actuation current,satis-fying the requirement of switch driving.The microfabrication processes of the designed switches were given.The test of S -parameters shows that the isolation is -40 dB at 10 GHz.

The multi-SCCO2 (supercritical carbon dioxide) release and dry process based on our specialized SCCO2 semiconductor process equipment is investigated and the releasing mechanism is discussed. The experiment results show that stuck cantilever beams were held up again under SCCO2 high pressure treatment and the repeatability of this process is nearly 100%.

简要回顾了传统RCA清洗工艺的历史背景和清洗原理,介绍了RCA清洗随着工艺节点减小存在的局限性。在此基础上,阐述了以超临界二氧化碳（SCCO2）为媒质的新型清洗工艺,该工艺流程可以同时实现超临界流体清洗和干燥。结合自主研发的绿色环保二氧化碳超临界半导体清洗设备,论述了利用SCCO2对Si片进行无损伤清洗的工艺原理和工艺流程。分析了近年来国内外对SCCO2清洗的研究进展,展示了其在清洗方面的巨大潜力以及在微电子行业应用中的有效性和优越性,其研究成果有利于推动下一代清洗工艺的发展。