В статье описан способ использования электролюминесцентных панелей не только в виде источника света, но и в виде датчика оптического и нейтронного излучения. Рассмотрен фотодиэлектрический эффект в электролюминесцентных панелях. Получены осциллограммы напряжения и тока электролюминесцентной панели, зависимости величины электрической емкости от уровня внешней освещенности. Изображена структурная схема системы для управления электролюминесцентной панелью.

Photosensitive polycrystalline CuIn0.95Ga0.05Se2 thin films have been formed on glass, aluminum, and nanoporous Al/Al2O3 substrates by means of two-step selenization in a gas (nitrogen) flow carrying a reaction component (selenium). The structural properties and the Raman scattering spectral dependences have been investigated. The dependence of the main lattice parameters and intensities of the Raman scattering lines on the substrate material is demonstrated.

Requirements for the operation mode of power sources of flat electroluminescent panels are formulated. A block diagram of the power source for electroluminescent panels is developed. The effect of the current waveform on parameters of the electroluminescent panel is studied.

Possible reasons for decomposition of the emission layer of working electroluminescence structures that cause a decrease in the working time are considered. Results of a multifactor experiment aimed at a search for the optimal composition of suspensions of the emitting and dielectric layers of the structure are presented. Compositions of dielectric components are proposed. Results of life tests are presented.

Approaches to modeling of the electric field arising at the input of the channels of microchannel plates (MCPs) mounted in image converters (ICs) used in the nigh-vision technique are proposed. A procedure for determining the boundary conditions of the model, which allows one to adequately compute paths of the electrons emitted by the photocathode of the 2nd+-generation IC and then interacting with the end surface of the MCP is presented. The developed model is used to study the behavior of the electrons reflected by the input surface of the MCP.

Approaches to simulation of behavior of secondary electrons in channels of microchannel plates (MCPs) with different cross sections are proposed. Possible versions of violation of channel cross sections admissible in the course of MCP production are presented. The influence of variations in the cross section shape admissible in the manufacturing process on the MCP amplification capability is studied.

Deskribing algoritm of automatic projection of the microchannel plates (MCP). MCP is used in the night vision devises and contactless photoelectric pick-ups of control isolator in high-voltage power line