Photosensitive polycrystalline CuIn0.95Ga0.05Se2 thin films have been formed on glass, aluminum, and nanoporous Al/Al2O3 substrates by means of two-step selenization in a gas (nitrogen) flow carrying a reaction component (selenium). The structural properties and the Raman scattering spectral dependences have been investigated. The dependence of the main lattice parameters and intensities of the Raman scattering lines on the substrate material is demonstrated.

A technology of two stage selenezation method in the carrier gas (nitrogen) stream of the reaction component (selenium) has been suggested for the CuIn0.95Ga0.05Se2 thin film growing. Morphology and structure of the CuIn0.95Ga0.05Se2 film have been studied by SEM and XRD methods. Phase compound of film material for the CuIn0.95Ga0.05Se2 semiconductor solution has been studied by X-ray photoelectron spectroscopy method.

The results of an investigation into the production of porous aluminum oxide, which is a typical self-organized material, by anodic oxidation of aluminum in acid solutions are presented. The functional dependences of the impact of the formation conditions on the structural parameters of porous anodic aluminum oxide, including pore diameter and oxide-cell size, are studied.