For the first time, an experimental dependence of the grain size and mechanical properties of a thin-film aluminum material on the dose of short-wave radiation has been obtained. A thin film of aluminum was formed on a silicon substrate using magnetron sputtering. The effect of a decrease in mechanical strength and biaxial elastic modulus with increasing radiation dose was identified. This effect is explained by a decrease in grain size and roughness on a thin-film aluminum membrane. For the microscopically measured range of aluminum grain sizes, the inverse Hall-Petch relation is used. During the research, it was determined that during irradiation the number of grain boundaries and the number of grains themselves increases, which leads to an increase in the likelihood of deformation.

In this paper, we study the dynamics of heating the matrix of anode nodes membrane with a transmission-type target under the action of a field emission current generated in the electronic system of a maskless X-ray nanolithograph. The promising membrane materials that provide the most efficient heat removal from the matrix have been determined, among which diamond-like films have shown the best thermal stability. At the calculated power of soft X-ray radiation P_X=2.5 nW, scattered by a pixel with a size of 20 nm and an X-ray resist irradiation dose D=100 J/m2, the exposure time was 25 μs. It is shown that during the exposure of a 150 mm plate, a diamond-like anode membrane with a size of 300x300 elements heats up from 20 to 62oC, which is 15-25 times lower than the heating temperature of alternative anode materials (Cu, Fe, Ni, Si, Al). The technological route for the fabrication of the matrix of anode nodes is described, taking into account the proposed methods for optimizing its design, aimed at reducing the thermal effects of heating during X-ray nanolithography processes. The results obtained can be applied in the development of a thermostable system of microfocus X-ray tubes as part of a maskless X-ray nanolithograph. Keywords: X-ray nanolithography, microfocus X-ray tube, transmission-type target, matrix of anode nodes, electron bombardment heating, thermal expansion, Bosch-process.

Three-dimensional integration, which improves the performance of an integrated circuit by reducing die area and decreasing signal latency, is made possible by through-holes in silicon (TSV). Combining ICs in a micro-assembly and tightly connecting them vertically solves the problem with efficiency. Due to the need to minimize the characteristics of the microcircuit level, the number of transistors per unit area continues to increase. All IC components must be electrically connected to ensure proper operation. Over the years, various IP architectures have been developed to keep the path of miniaturization going. This article focuses on existing microassembly methods, ranging from two-dimensional integration (2D) to three-dimensional (3D).

The review focuses on adhesive bonding technology, which is used both for manufacturing various micro- and nanoelectronic devices, sensors and microsystems, and for assembling or integrating various components. Information on the theory of adhesive bonding mechanisms is presented. The properties and applications of four classes of polymers are reviewed: thermoplastic, ther-mosetting, elastomeric, and hybrid. The classification of different mechanisms used to initialize the curing process of adhesives is presented. Existing methods of applying polymers to the wafer surface are described. The main types of designs and principles of operation of adhesive wafer bonding equipment are presented, as well as its main suppliers. Examples of procedures and suitable process parameters are given for both wafer bonding with a continuous layer of adhesive and wafer bonding with patterned adhesive layers (also called selective or local bonding). The conditions required to improve the quality of the adhesive bond and to reduce the density of defects are specified, including cases of bonding wafers made from different materials. Adhesive wafer bonding is used for the fabrication of three-dimensional integrated circuits, and for the integration of integrated circuits with microsystems such as infrared focal plane arrays, spatial light modulators (micromirror arrays), microtip arrays for data storage systems, and laser systems. Adhesive wafer bonding is also used for the fabrication of microcavities in packaging applications, for manufacturing of liquid crystal on silicon (LcoS) components, for thin-film solar cells, for radiofrequency components, for microfuel cells, for hard disk drive microactuators, for the bioMEMS and micrototal analysis systems.

There is a lack of information on the magnetic properties of particles of such materials as powder magnetic (modified by inclusions of magnetite and maghemite) carbon sorbents intended for water purification from various kinds of impurities and, what is especially important, allowing to perform the prompt isolation of the spent sorbent – by magnetic separation. The data on the magnetic susceptibility χ of the particles of these sorbents, found by the developed experimental calculation method based on the concept of the corresponding magnetometry of a moderately rarefied dispersed sample with a dispersed phase of the particles under study, are presented. Experimental dependences of the magnetic susceptibility of <χ>of a dispersed sample on the volume fraction γ of controlled particles in it have been obtained - for different values ​​of the magnetic field strength H in the range from 22 to 61 kA/m, i.e. in the postextremal region for the susceptibility. In addition to the necessary assessment of their linear, located at γ ≤ 0.15-0.2, sections, this also made it possible to find and phenomenologically describe the field dependences of the generalized data of the reduced susceptibility of <χ>/γ, i.e. data χ: in the form of an inverse power function with a power of 0.7 ... 0.8 at H.

Thin-film membranes are made from alternating layers of silicon oxide and silicon nitride using a group technology. The influence of the number of layers constituting the membrane, while maintaining its thickness, on the value of mechanical strength has been studied. The burst pressure of a membrane structure 560 µm in diameter varies from 0.9 to 1.65 atm for 30 samples, depending on the number of membrane layers. The mechanical strength of the Si 3 N 4 /SiO 2 structure varies from 10.5 to 19.2 GPa. It is shown that the region of discontinuity of the structure is localized at the membrane/substrate interface.

The research paper describes the technology of temporary bonding for carrying out technological operations with semiconductor wafers with a diameter of 100 mm or less on equipment for a wafer diameter of 150 mm. The main technological processes for manufacturing a silicon substrate 300 μm thick with blind microholes (vertical grooves) 100 μm in diameter using temporary bonding technology are presented. Investigations of the elemental analysis of the formed structure of metals in blind microholes were carried out on the basis of spectral ellipsometry. Metallization was carried out by a combination of methods of atomic layer and magnetron sputtering, chemical and electrochemical deposition. The effect of expansion of the groove walls during deep plasma-chemical etching of silicon is shown. The developed technology of temporary bonding is intended for the production of silicon interposers with TSV holes, 2.5D and 3D microassemblies.

Произведен численный и аналитический расчет тонких мембран разного компонентного состава и различной формы. Расчеты апробированы с экспериментальными исследованиями. Рассчитано критическое давление и напряжение для всех видов и составов мембран.

Предложена конструкция теплового вакуумметра на MEMS-датчиках сопротивления, содержащая измерительный и компенсационные датчики, находящиеся под граничными значениями диапазона измерения давления.

In field electron emission (FE) studies, the current/voltage or the macroscopic current-density/field characteristics of single tip or large area field emitters can be expressed in a nearly linear form using one of a small number of standard data-analysis plots. Usually, the chosen plot is a Fowler-Nordheim plot, a Murphy-Good plot or a Millikan-Lauritsen plot. The FE orthodoxy test can be applied to any of the three types of plots, to test the reasonability of the obtained experimental data. A difficulty of using the orthodoxy test is that there is no technical procedure or simple platform that can be used to apply the test to the experimental data. This report describes a simple web-tool that is designed to apply the FE orthodoxy test to any of these data-analysis plots, and then to use the test results to extract the emitter characterization parameters if the data passes the orthodoxy test. The web-tool is used by specifying the nature of the plot, the emitter‘s local work function, relevant system macroscopic parameters, and the coordinates of two “end-of-range“ points on a line fitted to the data-analysis plot. The web-tool simplifies the data processing related to FE studies and experiments by: determining the value of the pre-exponential voltage/field exponent κ for Murphy-Good plots; evaluating the scaled-field parameters in FE theory that correspond to the ends of the working range; determining the status of the tested data before publishing it; determining the status of the emitter or experiments. Hopefully, the web-tool can help to develop basic understanding of the different behaviors of emitters. INTRODUCTION In field electron emission (FE) theory, Fowler-Nordheim (FN), Murphy-Good (MG) and Millikan-Lauritsen (ML) data-analysis plots are methods for presenting measured current/voltage Im(Vm) or the macroscopic current-density/field JM(FM) characteristics of FE experiments in a nearly linear form. Advantages of using Murphy-Good plots are that they are predicted to be “very nearly straight“ [1], and that there are fewer correction factors in the mathematics of the data-analysis process. A web-tool has been developed that allows researchers to easily test and analyze experimental results by first applying the so-called orthodoxy test and then (if the test is passed) extracting characterization parameters for the emitter used. The three types of plots can be presented in the general form ln(Y⁄ Xκ) vs X-1. Here, Y is either the measured total emission current Im or the macroscopic current density JM, X is either the measured voltage Vm or the macroscopic electrostatic field intensity FM, and κ is the pre-exponential voltage exponent in the empirical FE equation Im= C(Vm) κ exp[–B/Vm]...(1), where B can be treated as a constant and C can often be approximated as a constant. In the expanded form of the Murphy-Good FE equation, κ is given by 2-(η ⁄ 6), where η is the scaling parameter for the Schottky-Nordheim (SN) barrier and is given by η(f)= bcS 2f-1/2, where b is the second FN constant, cS is the Schottky constant and f is the local work function [2]. Thus, κ=2 for FN plots, 0 for ML plots, and 2-(η ⁄ 6) for MG plots [2]. The field emission orthodoxy test is a quantitative test that can be applied to any of the data-analysis plots and to any geometrical emitter shape for which MG FE theory is an adequate approximation. The test is based on extracting values of a specific and important parameter in FE theory. This parameter is the characteristic scaled field fC= cS fFC= cS fzC Vm, where FC is the local electrostatic field at a characteristic location on the emitter surface (usually taken as its apex), and zC [Vm/FC] is the related characteristic voltage conversion length (VCL). The extracted fC-values are then compared to a set of internal analyzed historical data, taken from metal emitters between 1926 and 1972. These data provide the orthodoxy test criteria as listed in [3]. The test is an “engineering triage“ test and provides three results. (1) Pass: the data are reasonable. (2) Fail: the data are unreasonable, and the extracted parameters are likely to be spurious. (3) Inconclusive; the data need more study and analysis. If the orthodoxy test is passed, then the characterization parameters of the emitter can validly be extracted. Typically, these are: the formal emission area (for a Schottky-Nordheim barrier) Af SN, and the related formal area efficiency αf SN; the VCL zC, and the related characteristic field enhancement factor (FEF) γC [2]. METHODOLOGY The FE analysis web-tool [4] had been developed for the purpose of applying the orthodoxy test. It does this by making precise calculations for the parameter-extraction process from any of the three types of data-analysis plot. It is necessary to precisely calculate the values of the FE theory scaled parameters and (for MG plots) the κ value as defined in [1]. The main tool requires only the plot form, the assumed value of f, and the coordinates of the upper and lower limits for the line fitted to the data. To extract values for γC and αf SN, where relevant-usually only for large area field electron emitters (LAFEs)-further macroscopic system parameters are needed, namely a cathode-anode macroscopic distance dM (there are several types) and the macroscopic area AM of the LAFE. To test the performance of the web-tool, simulated currentvoltage data plots were generated, for each of the three types of plot, using the input parameter-values: f=4.65 eV, Af SN=100 nm2, zC=180 nm, dM=100 mm, AM=100 mm 2, with the tested range set to be 0.17≤fC≤0.43 (which is chosen to pass the orthodoxy test). RESULTS AND DISCUSSION The simulated data are presented in Figure 1. For the MG plot, the value of κ has been calculated using the formula given earlier, which yields κ=1.2398. With each of the plots, a line fitted to the plot would have slope Sfit and intercept ln(Rfit ) on the vertical (1000/Vm=0) axis. Both these values can in fact be obtained from the coordinates that correspond to the range of the fitted lines. The resulting values of Sfit and ln(Rfit ), as evaluated by the web-tool, are shown in Table 1. [Note that the Neper (Np) is the SI recognised unit of natural logarithmic difference, for amplitude-type quantities]. The range of fC-values extracted from each of the plots, using the relevant formula in [3], coincides with the chosen input range, thereby demonstrating consistency. Figure 1. Simulated data-analysis plots for the three plot types shown, for f= 4.65 eV, Af SN= 100 nm2, zC= 180 nm, and 0.17≤fC≤0.43. Table 1 also shows values of extracted characterization parameters, except that no reliable theory currently exists for extracting area-like quantities from a ML plot. All the data-analysis plots have “nearly straightline behavior“, but each plot is slightly curved in a different way. This leads to a noticeable variation and percentage error in the extracted values of the characterization parameters but does not significantly affect the results of the orthodoxy test. With this set of chosen data the FN plot appears to work slightly better than the MG plot, but our general impression is that for extracting area-like quantities the MG plot is expected to be more reliable and easier to use. CONCLUSIONS There is a need for a user-friendly tool that can apply the field emission orthodoxy test to experimental data, and (if appropriate) easily extract characterization parameters. Information of this kind is useful in the research and development of electron sources, in our case improved electron microscope sources and hybrid-design sources involving dielectric layers on metal point sources, but more generally sources based on large area field electron emitters. Our web-tool [4], now in its final stages of development, seeks to provide this facility, for all the forms of data-analysis plot commonly used. Notwithstanding this, our strong recommendation is that best engineering and scientific practice is to always plot the raw measured current/voltage data [5], to use a Murphy-Good plot rather than a Fowler-Nordheim plot, and to apply the orthodoxy test before attempting to extract characterization parameters. Table 1. The extraction results for each of the Figure 1 data-analysis plots. Figure 2. The web-tool form to apply the orthodoxy test to a LAFE sample. -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 ln (I m /V m κκ ) [ ln (A /V κκ ) ] 1000/Vm [V-1]

We develop a photothermal technology to control optical heating of polymer and liquid crystal films through a refractory titanium nitride (TiN) metasurface. The metasurface represents an array of identical square-shaped TiN nanoantennas on a Si substrate. Upon CW laser illumination, a TiN nanoantenna experiences anomalous Joule heating at a plasmon resonance. A temperature rise provides a unique opportunity for locally probing phase transitions. In the case of heterogeneous PMMA thin films or polymeric blends, a controlled optical heating is needed to probe the glass transition temperature (Tg) of their constituents. Here, we model a controlled thermal response originating from the TiN nanoantenna under CW laser illumination by using FDTD/FEM methods.

An optimized design of an analog circuit for measuring the parameters of a MEMS (microelectro-mechanical system)-based thermoresistive flow-rate sensor is proposed, which combines both calorimetric and anemometric flow measurement modes. Fixing the sensor on a plastic wing tilted at a non-zero angle relative to the direction of gas flow in such a system makes it possible to measure the gas flow velocity in a wide range from 0.05 to 5 m/s with an error of 3 % and a relative standard deviation of 2 %. The use in the proposed circuit of platinum thermistors located on a thin-film dielectric membrane (SiO2/Si3N4/SiO2/Si3N4), which can serve both as heaters and sensitive resistors for temperature measurement increasing the output voltage by an order of magnitude, thereby reducing the noise that occurs when a weak signal is amplified. It has been experimentally shown that the calorimetric method is more suitable for measuring low flow velocities (from 0 to 1 m/s), while the anemometric one is better applicable for detecting higher flow velocities (more than 1 m/s). The rise in temperature of thermistors due to its Joule heating by direct current was measured both in air and in vacuum in the absence of the gas flow. It was found in the experiment that the in-plane thermal conductivity of the four-layer dielectric membrane used in the sensor varies from 2.61 W/(m.K) to the level of about 3.03 W/(m.K) with an increase in the heating power in the range from 0.6 to 4 W, respectively. (C) 2021 Elsevier B.V. All rights reserved.

Исследована динамика разогрева матрицы узлов анодной мембраны с прострельной мишенью под действием автоэмиссионного тока, генерируемого в электронной системе безмасочного рентгеновского нанолитографа. Определены перспективные материалы мембраны, обеспечивающие эффективный теплоотвод от матрицы анодных узлов, среди которых алмазоподобные пленки показали наилучший результат. При рассчитанной мощности мягкого рентгеновского излучения P_X=2.5 nW, рассеиваемой на пикселе размером 20 nm, и дозе облучения рентгенорезиста D=100 J/m2 время экспонирования составило 25 μs. Показано, что за время экспонирования пластины диаметром 150 mm алмазоподобная анодная мембрана размером 300x300 элементов разогревается от 20 до 62oC, что в 21 раз ниже температуры разогрева альтернативного материала анода из Si. Описан технологический маршрут изготовления матрицы анодных узлов с учетом предложенных способов оптимизации ее конструкции, направленных на понижение тепловых эффектов разогрева при проведении процессов рентгеновской нанолитографии. Полученные результаты могут быть применимы при разработке системы микрофокусных рентгеновских трубок в составе безмасочного рентгеновского нанолитографа. Ключевые слова: рентгеновская нанолитография, микрофокусная рентгеновская трубка, прострельная мишень, матрица анодных узлов, тепловой разогрев, термическое расширение, Bosch-процесс.

Предложен инновационный подход для переноса знаков совмещения на тонких пластинах. Реализация подхода осуществляется посредством технологии временного бондинга.. В пластине-носителе были сделаны «смотровые окна» для сканирования знаков совмещения на рабочей пластине. При помощи двухсторонней литографии и плазмохимического травления был сделан массив TSV-структур.

Устройства вакуумной электроники зарекомендовали себя во многих технических отраслях. Для дальнейшего развития отрасли необходимо совершенствование методов изготовления автоэмиссионных (АЭ) структур. В работе представлена технология создания АЭ диодных и транзисторных структур на основе молибдена (Mo).

Отработана операция временного бондинга с использованием в качестве носителя кварцевой пластины. Получена экспериментальная зависимость толщины адгезионного слоя от скорости вращения центрифуги. Толщина утоненной рабочей Si-пластины 0150 мм составила 93 ± 3 мкм. Прогиб утоненной структуры не превышает 30 мкм.

An anode element of an X-ray lithograph is made in the form of a PolySi/Si3N4/SiO2 membrane structure using group technology. The construction of the stand is modernized to determine mechanical properties of membranes. The critical pressure of membrane structure with a diameter of 250 um varies in the range from 0.484 to 0.56 MPa for 15 samples. The mechanical strength of PolySi/Si3N4/SiO2 structure is 3.13 GPa. The new model in Comsol package shows a good correlation between experimental critical pressure and theoretical mechanical strength of membrane. The distribution of mechanical stresses across membrane by means of modeling and analytical calculation is presented. It is proved that the region of structure discontinuity is localized at membrane/substrate interface.

The possibilities of optical microscopy for preliminary and complex analysis of structures, which are used mainly in microelectronics and micromechanics, are demonstrated. Specific examples of the use of optical microscopy for qualitative and quantitative analysis, development of technological processes, control of defects, analysis of surface relief, determination of the parameters of structures are given. Surface measurements are performed in reflected and transmitted light, using bright and dark field modes.

We have prepared the anode cell of an X-ray lithograph in the form of a PolySi/Si3N4/SiO2 membrane structure using group technology. The design of the stand for determining mechanical properties of membranes has been modernized. The critical pressure of a membrane structure with a diameter 250 μm varies in the range from 0.484 to 0.56 MPa for 15 samples. The mechanical strength of the PolySi*/Si3N4/SiO2 structure is 3.13 GPa. The new model in the Comsol package shows good correlation between the experimental critical pressure and the theoretical mechanical strength of the membrane. The distribution of mechanical stresses over the membrane has been obtained by simulation and analytic calculation. It is proved that the structure breaking region is localized at the membrane/substrate interface.

The work shows specific examples of the possibilities and limitations of the contact profilometry method for measuring the relief of micro and nanostructures formed on substrates during the production of microelectronic devices. The requirements to the relief parameters of microelectronic structures are formulated, which make it possible to use contact profilometers for their measurement and control. Methods of forming steps for measuring the thickness of films by contact profilometry are described, and their advantages and disadvantages are analyzed. The method of contact profilometry with optical profilometry and atomic force microscopy is compared.