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1Диспергирование Пористого Кремния, Насыщенного Окислителем

А.А. Карпова,В.М. Фрейман,Е.В. Шашков,А.Г. Зегря,Н.С. Воробьев,Г.Г. Савенков,У.М. Побережная,М.В. Байдакова,А.В. Нащекин, Д.А. Кириленко,В.П. Улин,Г.Г. Зегря

2023ВСЕРОССИЙСКАЯ КОНФЕРЕНЦИЯ "ФИЗИКА ВЗРЫВА ТЕОРИЯ, ЭКСПЕРИМЕНТ, ПРИЛОЖЕНИЯ" , 18-21 сентября 2023 г, Новосибирск, Россия ТЕЗИСЫ ДОКЛАДОВ

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2ЛАЗЕРНЫЙ ЭФФЕКТ ПРИ ВЗРЫВЕ ПОРИСТОГО КРЕМНИЯ

Г. Г. ЗЕГРЯ,Е. В. ШАШКОВ,А. А. КАРПОВА,Н. С. ВОРОБЬЕВ,В. М. ФРЕЙМАН,А. Г. ЗЕГРЯ, Ю. С. СОЛОМОНОВ

2021ПИСЬМА В ЖУРНАЛ ЭКСПЕРИМЕНТАЛЬНОЙ И ТЕОРЕТИЧЕСКОЙ ФИЗИКИ

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3Laser Effect in the Explosion of Porous Silicon

Zegrya G. G.,Shashkov E. V.,Karpova A. A.,Vorobiev N. S.,Freiman V. M.,Zegrya A. G., Solomonov Yu. S.

In the explosive reaction of composites based on porous silicon with perchlorate oxidizers, a new effect has been discovered: the intensity accompanying the explosive reaction reaches its maximum value in tens of microseconds from the beginning of the explosive reaction, a sharp drop in intensity to zero then occurs for tens of microseconds (“zero shelf”), and short light and electromagnetic pulses are finally emitted. The recorded emission line width about 1 nm allows one to interpret a light pulse as a laser effect. The conditions for observing the zero shelf, the possible cause of its appearance, and the emission mechanism of a short light pulse are discussed.

2021JETP Letters（2021）引用：3

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4Auger Recombination Via Deep Energy Levels As a Potential Cause of Efficiency Droop in InGaN/GaN LEDs

A. A. Karpova,D. M. Samosvat,G. G. Zegrya

In the present work a mechanism of nonradiative radiation via deep energy levels is considered for InGaN/GaN LEDs from the first principles. The coefficient and time of such Auger recombination are evaluated numerically and are shown to be enough for causing the efficiency droop in blue and green InGaN/GaN LEDs.

2020METANANO 2019（2020）

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5Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region

A. A. Karpova,D. M. Samosvat,A. G. Zegrya,G. G. Zegrya,V. E. Bugrov

A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths.

2018REVIEWS ON ADVANCED MATERIALS SCIENCE（2018）

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6Effect of Coulomb Interaction with Barrier Carriers in the Waveguide Region on Multiple Quantum Well Laser Inversion Threshold

A. A. Karpova,G. G. Zegrya

A mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. It is shown that the Auger coefficient is a weak function of temperature and nonmonotonically depends on the quantum well width.

2018INTERNATIONAL CONFERENCE PHYSICASPB/2018（2018）

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